One-transistor one-resistor (1T1R) cell for large-area electronics

Autores
Ghenzi, Néstor; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; Beltrán, M.; Knez, M.; Hueso, L.; Stoliar, P.
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.
Fil: Ghenzi, Néstor. Pontificia Universidad Católica Argentina "Santa María de los Buenos Aires"; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Cic Nanogune; España
Fil: Rozenberg, M.. Université Paris Sud; Francia
Fil: Pietrobon, L.. Cic Nanogune; España
Fil: Llopis, R.. Cic Nanogune; España
Fil: Gay, R.. Cic Nanogune; España
Fil: Beltrán, M.. Cic Nanogune; España
Fil: Knez, M.. Cic Nanogune; España. Basque Foundation for Science; España
Fil: Hueso, L.. Cic Nanogune; España. Basque Foundation for Science; España
Fil: Stoliar, P.. Cic Nanogune; España. National Institute Of Advanced Industrial Science And Technology; Japón
Materia
transistor
switching
memristor
non volatile
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/99747
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/99747
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling One-transistor one-resistor (1T1R) cell for large-area electronicsGhenzi, NéstorRozenberg, M.Pietrobon, L.Llopis, R.Gay, R.Beltrán, M.Knez, M.Hueso, L.Stoliar, P.transistorswitchingmemristornon volatilehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.Fil: Ghenzi, Néstor. Pontificia Universidad Católica Argentina "Santa María de los Buenos Aires"; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Cic Nanogune; EspañaFil: Rozenberg, M.. Université Paris Sud; FranciaFil: Pietrobon, L.. Cic Nanogune; EspañaFil: Llopis, R.. Cic Nanogune; EspañaFil: Gay, R.. Cic Nanogune; EspañaFil: Beltrán, M.. Cic Nanogune; EspañaFil: Knez, M.. Cic Nanogune; España. Basque Foundation for Science; EspañaFil: Hueso, L.. Cic Nanogune; España. Basque Foundation for Science; EspañaFil: Stoliar, P.. Cic Nanogune; España. National Institute Of Advanced Industrial Science And Technology; JapónAmerican Institute of Physics2018-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/99747Ghenzi, Néstor; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; et al.; One-transistor one-resistor (1T1R) cell for large-area electronics; American Institute of Physics; Applied Physics Letters; 113; 7; 8-2018; 1-50003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.5040126info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5040126info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:55:33Zoai:ri.conicet.gov.ar:11336/99747instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:55:33.359CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv One-transistor one-resistor (1T1R) cell for large-area electronics
title One-transistor one-resistor (1T1R) cell for large-area electronics
spellingShingle One-transistor one-resistor (1T1R) cell for large-area electronics
Ghenzi, Néstor
transistor
switching
memristor
non volatile
title_short One-transistor one-resistor (1T1R) cell for large-area electronics
title_full One-transistor one-resistor (1T1R) cell for large-area electronics
title_fullStr One-transistor one-resistor (1T1R) cell for large-area electronics
title_full_unstemmed One-transistor one-resistor (1T1R) cell for large-area electronics
title_sort One-transistor one-resistor (1T1R) cell for large-area electronics
dc.creator.none.fl_str_mv Ghenzi, Néstor
Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author Ghenzi, Néstor
author_facet Ghenzi, Néstor
Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author_role author
author2 Rozenberg, M.
Pietrobon, L.
Llopis, R.
Gay, R.
Beltrán, M.
Knez, M.
Hueso, L.
Stoliar, P.
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv transistor
switching
memristor
non volatile
topic transistor
switching
memristor
non volatile
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.
Fil: Ghenzi, Néstor. Pontificia Universidad Católica Argentina "Santa María de los Buenos Aires"; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Cic Nanogune; España
Fil: Rozenberg, M.. Université Paris Sud; Francia
Fil: Pietrobon, L.. Cic Nanogune; España
Fil: Llopis, R.. Cic Nanogune; España
Fil: Gay, R.. Cic Nanogune; España
Fil: Beltrán, M.. Cic Nanogune; España
Fil: Knez, M.. Cic Nanogune; España. Basque Foundation for Science; España
Fil: Hueso, L.. Cic Nanogune; España. Basque Foundation for Science; España
Fil: Stoliar, P.. Cic Nanogune; España. National Institute Of Advanced Industrial Science And Technology; Japón
description We developed a one-transistor one-resistor cell composed of one TiO2-based resistive switching (RS) device and one ZnO-based thin-film transistor (TFT). We study the electric characteristics of each component individually, and their interplay when both work together. We explored the direct control of bipolar RS devices, using our TFTs to drive current in both directions. We also report striking power implications when we swap the terminals of the RS device. The target of our work is the introduction of RS devices in large-area electronic (LAE) circuits. In this context, RS devices can be beneficial regarding functionality and energy consumption, when compared to other ways to introduce memory cells in LAE circuits.
publishDate 2018
dc.date.none.fl_str_mv 2018-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/99747
Ghenzi, Néstor; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; et al.; One-transistor one-resistor (1T1R) cell for large-area electronics; American Institute of Physics; Applied Physics Letters; 113; 7; 8-2018; 1-5
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/99747
identifier_str_mv Ghenzi, Néstor; Rozenberg, M.; Pietrobon, L.; Llopis, R.; Gay, R.; et al.; One-transistor one-resistor (1T1R) cell for large-area electronics; American Institute of Physics; Applied Physics Letters; 113; 7; 8-2018; 1-5
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.5040126
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.5040126
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269351836647424
score 13.13397

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