Simulation of non-volatile memory cell using chalcogenide glasses
- Autores
- Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.
- Año de publicación
- 2012
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.
Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina - Materia
-
Chalcogenide Glasses
Gesbte System
Non-Volatile Memory
Numerical Simulation - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/67332
Ver los metadatos del registro completo
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Simulation of non-volatile memory cell using chalcogenide glassesRocca, Javier AlejandroFontana, MarceloArcondo, B.Chalcogenide GlassesGesbte SystemNon-Volatile MemoryNumerical Simulationhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaFil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaFil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaElsevier Science Sa2012-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/67332Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S5210925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2012.01.052info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925838812001004info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:54:38Zoai:ri.conicet.gov.ar:11336/67332instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:54:39.083CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Simulation of non-volatile memory cell using chalcogenide glasses |
title |
Simulation of non-volatile memory cell using chalcogenide glasses |
spellingShingle |
Simulation of non-volatile memory cell using chalcogenide glasses Rocca, Javier Alejandro Chalcogenide Glasses Gesbte System Non-Volatile Memory Numerical Simulation |
title_short |
Simulation of non-volatile memory cell using chalcogenide glasses |
title_full |
Simulation of non-volatile memory cell using chalcogenide glasses |
title_fullStr |
Simulation of non-volatile memory cell using chalcogenide glasses |
title_full_unstemmed |
Simulation of non-volatile memory cell using chalcogenide glasses |
title_sort |
Simulation of non-volatile memory cell using chalcogenide glasses |
dc.creator.none.fl_str_mv |
Rocca, Javier Alejandro Fontana, Marcelo Arcondo, B. |
author |
Rocca, Javier Alejandro |
author_facet |
Rocca, Javier Alejandro Fontana, Marcelo Arcondo, B. |
author_role |
author |
author2 |
Fontana, Marcelo Arcondo, B. |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Chalcogenide Glasses Gesbte System Non-Volatile Memory Numerical Simulation |
topic |
Chalcogenide Glasses Gesbte System Non-Volatile Memory Numerical Simulation |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure. Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina Fil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina Fil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina |
description |
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/67332 Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S521 0925-8388 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/67332 |
identifier_str_mv |
Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S521 0925-8388 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2012.01.052 info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925838812001004 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613658721648640 |
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13.070432 |