Simulation of non-volatile memory cell using chalcogenide glasses

Autores
Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.
Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Materia
Chalcogenide Glasses
Gesbte System
Non-Volatile Memory
Numerical Simulation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/67332
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/67332
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Simulation of non-volatile memory cell using chalcogenide glassesRocca, Javier AlejandroFontana, MarceloArcondo, B.Chalcogenide GlassesGesbte SystemNon-Volatile MemoryNumerical Simulationhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaFil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaFil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; ArgentinaElsevier Science Sa2012-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/67332Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S5210925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2012.01.052info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925838812001004info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:49:41Zoai:ri.conicet.gov.ar:11336/67332instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:49:42.037CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Simulation of non-volatile memory cell using chalcogenide glasses
title Simulation of non-volatile memory cell using chalcogenide glasses
spellingShingle Simulation of non-volatile memory cell using chalcogenide glasses
Rocca, Javier Alejandro
Chalcogenide Glasses
Gesbte System
Non-Volatile Memory
Numerical Simulation
title_short Simulation of non-volatile memory cell using chalcogenide glasses
title_full Simulation of non-volatile memory cell using chalcogenide glasses
title_fullStr Simulation of non-volatile memory cell using chalcogenide glasses
title_full_unstemmed Simulation of non-volatile memory cell using chalcogenide glasses
title_sort Simulation of non-volatile memory cell using chalcogenide glasses
dc.creator.none.fl_str_mv Rocca, Javier Alejandro
Fontana, Marcelo
Arcondo, B.
author Rocca, Javier Alejandro
author_facet Rocca, Javier Alejandro
Fontana, Marcelo
Arcondo, B.
author_role author
author2 Fontana, Marcelo
Arcondo, B.
author2_role author
author
dc.subject.none.fl_str_mv Chalcogenide Glasses
Gesbte System
Non-Volatile Memory
Numerical Simulation
topic Chalcogenide Glasses
Gesbte System
Non-Volatile Memory
Numerical Simulation
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.
Fil: Rocca, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Fontana, Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
Fil: Arcondo, B.. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Houssay. Instituto de Tecnologías y Ciencias de la Ingeniería ; Argentina
description In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure.
publishDate 2012
dc.date.none.fl_str_mv 2012-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/67332
Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S521
0925-8388
CONICET Digital
CONICET
url http://hdl.handle.net/11336/67332
identifier_str_mv Rocca, Javier Alejandro; Fontana, Marcelo; Arcondo, B.; Simulation of non-volatile memory cell using chalcogenide glasses; Elsevier Science Sa; Journal of Alloys and Compounds; 536; SUPPL.1; 9-2012; S516-S521
0925-8388
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2012.01.052
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925838812001004
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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