Negative differential resistance in porous silicon devices at room temperature

Autores
Marín Ramírez, Oscar Alonso; Toranzos, Victor Jose; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina
Fil: Toranzos, Victor Jose. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Materia
Negative Differential Resistance
Porous Silicon
Carrier Trapping
Volatile Memory
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/26464
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Negative differential resistance in porous silicon devices at room temperatureMarín Ramírez, Oscar AlonsoToranzos, Victor JoseUrteaga, RaulComedi, David MarioKoropecki, Roberto RomanNegative Differential ResistancePorous SiliconCarrier TrappingVolatile Memoryhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; ArgentinaFil: Toranzos, Victor Jose. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaElsevier2014-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/zipapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26464Marín Ramírez, Oscar Alonso; Toranzos, Victor Jose; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Negative differential resistance in porous silicon devices at room temperature; Elsevier; Superlattices And Microstructures; 79; 12-2014; 45-530749-6036CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.spmi.2014.12.019info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S074960361400487Xinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:37:43Zoai:ri.conicet.gov.ar:11336/26464instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:37:43.578CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Negative differential resistance in porous silicon devices at room temperature
title Negative differential resistance in porous silicon devices at room temperature
spellingShingle Negative differential resistance in porous silicon devices at room temperature
Marín Ramírez, Oscar Alonso
Negative Differential Resistance
Porous Silicon
Carrier Trapping
Volatile Memory
title_short Negative differential resistance in porous silicon devices at room temperature
title_full Negative differential resistance in porous silicon devices at room temperature
title_fullStr Negative differential resistance in porous silicon devices at room temperature
title_full_unstemmed Negative differential resistance in porous silicon devices at room temperature
title_sort Negative differential resistance in porous silicon devices at room temperature
dc.creator.none.fl_str_mv Marín Ramírez, Oscar Alonso
Toranzos, Victor Jose
Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author Marín Ramírez, Oscar Alonso
author_facet Marín Ramírez, Oscar Alonso
Toranzos, Victor Jose
Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author_role author
author2 Toranzos, Victor Jose
Urteaga, Raul
Comedi, David Mario
Koropecki, Roberto Roman
author2_role author
author
author
author
dc.subject.none.fl_str_mv Negative Differential Resistance
Porous Silicon
Carrier Trapping
Volatile Memory
topic Negative Differential Resistance
Porous Silicon
Carrier Trapping
Volatile Memory
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
Fil: Marín Ramírez, Oscar Alonso. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina
Fil: Toranzos, Victor Jose. Universidad Nacional del Nordeste. Facultad de Ciencias Exactas Naturales y Agrimensura; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Urteaga, Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnologia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
description We report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
publishDate 2014
dc.date.none.fl_str_mv 2014-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/26464
Marín Ramírez, Oscar Alonso; Toranzos, Victor Jose; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Negative differential resistance in porous silicon devices at room temperature; Elsevier; Superlattices And Microstructures; 79; 12-2014; 45-53
0749-6036
CONICET Digital
CONICET
url http://hdl.handle.net/11336/26464
identifier_str_mv Marín Ramírez, Oscar Alonso; Toranzos, Victor Jose; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Negative differential resistance in porous silicon devices at room temperature; Elsevier; Superlattices And Microstructures; 79; 12-2014; 45-53
0749-6036
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.spmi.2014.12.019
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S074960361400487X
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/zip
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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