Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction

Autores
Palumbo, Félix Roberto Mario; Miranda, Enrique
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Contrary to what is expected for a damaged device, the impact of 10 MeV-energy protons on a metal-oxide-semiconductor (MOS) structure can give rise to a significant reduction of the gate tunneling current, mainly in the high bias range. In order to simulate the observed deviation, a correction to the oxide field in the Fowler-Nordheim tunneling expression is considered. Since the nature and location of the device damaged region have not been clearly identified yet, the conduction problem is circumvented by introducing an effective nonlinear series resistance correction. Experimental and simulated data obtained as a function of the irradiation fluences supporting the proposed approach are presented. The possible origin of this nonlinear resistance and its implications for the reliability assessment of irradiated MOS devices are also discussed.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Materia
FOWLER-NORDHEIM
MOS
RELIABILITY
TUNNELING
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/189785
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correctionPalumbo, Félix Roberto MarioMiranda, EnriqueFOWLER-NORDHEIMMOSRELIABILITYTUNNELINGhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Contrary to what is expected for a damaged device, the impact of 10 MeV-energy protons on a metal-oxide-semiconductor (MOS) structure can give rise to a significant reduction of the gate tunneling current, mainly in the high bias range. In order to simulate the observed deviation, a correction to the oxide field in the Fowler-Nordheim tunneling expression is considered. Since the nature and location of the device damaged region have not been clearly identified yet, the conduction problem is circumvented by introducing an effective nonlinear series resistance correction. Experimental and simulated data obtained as a function of the irradiation fluences supporting the proposed approach are presented. The possible origin of this nonlinear resistance and its implications for the reliability assessment of irradiated MOS devices are also discussed.Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaInstitute of Electrical and Electronics Engineers2011-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/189785Palumbo, Félix Roberto Mario; Miranda, Enrique; Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 2-2011; 770-7750018-9499CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/5720536info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2011.2106220info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:07:33Zoai:ri.conicet.gov.ar:11336/189785instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:07:33.905CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
spellingShingle Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
Palumbo, Félix Roberto Mario
FOWLER-NORDHEIM
MOS
RELIABILITY
TUNNELING
title_short Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_fullStr Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full_unstemmed Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_sort Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Miranda, Enrique
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Miranda, Enrique
author_role author
author2 Miranda, Enrique
author2_role author
dc.subject.none.fl_str_mv FOWLER-NORDHEIM
MOS
RELIABILITY
TUNNELING
topic FOWLER-NORDHEIM
MOS
RELIABILITY
TUNNELING
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Contrary to what is expected for a damaged device, the impact of 10 MeV-energy protons on a metal-oxide-semiconductor (MOS) structure can give rise to a significant reduction of the gate tunneling current, mainly in the high bias range. In order to simulate the observed deviation, a correction to the oxide field in the Fowler-Nordheim tunneling expression is considered. Since the nature and location of the device damaged region have not been clearly identified yet, the conduction problem is circumvented by introducing an effective nonlinear series resistance correction. Experimental and simulated data obtained as a function of the irradiation fluences supporting the proposed approach are presented. The possible origin of this nonlinear resistance and its implications for the reliability assessment of irradiated MOS devices are also discussed.
Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
description Contrary to what is expected for a damaged device, the impact of 10 MeV-energy protons on a metal-oxide-semiconductor (MOS) structure can give rise to a significant reduction of the gate tunneling current, mainly in the high bias range. In order to simulate the observed deviation, a correction to the oxide field in the Fowler-Nordheim tunneling expression is considered. Since the nature and location of the device damaged region have not been clearly identified yet, the conduction problem is circumvented by introducing an effective nonlinear series resistance correction. Experimental and simulated data obtained as a function of the irradiation fluences supporting the proposed approach are presented. The possible origin of this nonlinear resistance and its implications for the reliability assessment of irradiated MOS devices are also discussed.
publishDate 2011
dc.date.none.fl_str_mv 2011-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/189785
Palumbo, Félix Roberto Mario; Miranda, Enrique; Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 2-2011; 770-775
0018-9499
CONICET Digital
CONICET
url http://hdl.handle.net/11336/189785
identifier_str_mv Palumbo, Félix Roberto Mario; Miranda, Enrique; Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 2-2011; 770-775
0018-9499
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/5720536
info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2011.2106220
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842980341094023168
score 12.993085

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