Standards for the Characterization of Endurance in Resistive Switching Devices

Autores: Lanza, Rodolfo Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Suñe, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando Leonel; Palumbo, Felix Roberto Mario; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang
Año de publicación: 2021
Idioma: inglés
Tipo de recurso: artículo
Estado: versión publicada
Descripción: Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
Fil: Lanza, Rodolfo Mario. King Abdullah University of Science and Technology; Arabia Saudita
Fil: Waser, Rainer. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania. Rwth Aachen University; Alemania
Fil: Ielmini, Daniele. Politecnico di Milano; Italia
Fil: Yang, J. Joshua. University of Southern California; Estados Unidos
Fil: Goux, Ludovic. Interuniversity Microelectronics Centre; Bélgica
Fil: Suñe, Jordi. Universitat Autònoma de Barcelona; España
Fil: Kenyon, Anthony Joseph. Colegio Universitario de Londres; Reino Unido
Fil: Mehonic, Adnan. Colegio Universitario de Londres; Reino Unido
Fil: Spiga, Sabina. Consiglio Nazionale delle Ricerche; Italia. Istituto per la Microelettronica e Microsistemi; Italia
Fil: Rana, Vikas. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Wiefels, Stefan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Menzel, Stephan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Valov, Ilia. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania
Fil: Villena, Marco A.. Applied Materials Incorporated; Italia
Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España
Fil: Jing, Xu. Southeast University; China
Fil: Campabadal, Francesca. Consejo Superior de Investigaciones Científicas; España
Fil: Gonzalez, Mireia B.. Consejo Superior de Investigaciones Científicas; España
Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina
Fil: Zhu, Kaichen. King Abdullah University of Science and Technology; Arabia Saudita
Fil: Roldan, Juan Bautista. Universidad de Granada; España
Fil: Puglisi, Francesco Maria. Università di Modena e Reggio Emilia; Italia
Fil: Larcher, Luca. Applied Materials Incorporated; Italia
Fil: Hou, Tuo-Hung. National Chiao Tung University; China
Fil: Prodromakis, Themis. University of Southampton; Reino Unido
Fil: Yang, Yuchao. Peking University; China
Fil: Huang, Peng. Peking University; China
Fil: Wan, Tianqing. Hong Kong Polytechnic University; Hong Kong
Fil: Chai, Yang. Hong Kong Polytechnic University; Hong Kong
Materia: CHARACTERIZATION
ENDURANCE
MEMORY
MEMRISTOR
METAL-OXIDE
RELIABILITY
RESISTIVE SWITCHING
VARIABILITY
Nivel de accesibilidad: acceso abierto
Condiciones de uso: https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
Institución: Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador: oai:ri.conicet.gov.ar:11336/166558

Acceder

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repository_id_str	3498
network_name_str	CONICET Digital (CONICET)
spelling	Standards for the Characterization of Endurance in Resistive Switching DevicesLanza, Rodolfo MarioWaser, RainerIelmini, DanieleYang, J. JoshuaGoux, LudovicSuñe, JordiKenyon, Anthony JosephMehonic, AdnanSpiga, SabinaRana, VikasWiefels, StefanMenzel, StephanValov, IliaVillena, Marco A.Miranda, EnriqueJing, XuCampabadal, FrancescaGonzalez, Mireia B.Aguirre, Fernando LeonelPalumbo, Felix Roberto MarioZhu, KaichenRoldan, Juan BautistaPuglisi, Francesco MariaLarcher, LucaHou, Tuo-HungProdromakis, ThemisYang, YuchaoHuang, PengWan, TianqingChai, YangCHARACTERIZATIONENDURANCEMEMORYMEMRISTORMETAL-OXIDERELIABILITYRESISTIVE SWITCHINGVARIABILITYhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.Fil: Lanza, Rodolfo Mario. King Abdullah University of Science and Technology; Arabia SauditaFil: Waser, Rainer. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania. Rwth Aachen University; AlemaniaFil: Ielmini, Daniele. Politecnico di Milano; ItaliaFil: Yang, J. Joshua. University of Southern California; Estados UnidosFil: Goux, Ludovic. Interuniversity Microelectronics Centre; BélgicaFil: Suñe, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Kenyon, Anthony Joseph. Colegio Universitario de Londres; Reino UnidoFil: Mehonic, Adnan. Colegio Universitario de Londres; Reino UnidoFil: Spiga, Sabina. Consiglio Nazionale delle Ricerche; Italia. Istituto per la Microelettronica e Microsistemi; ItaliaFil: Rana, Vikas. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Wiefels, Stefan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Menzel, Stephan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Valov, Ilia. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Villena, Marco A.. Applied Materials Incorporated; ItaliaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaFil: Jing, Xu. Southeast University; ChinaFil: Campabadal, Francesca. Consejo Superior de Investigaciones Científicas; EspañaFil: Gonzalez, Mireia B.. Consejo Superior de Investigaciones Científicas; EspañaFil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Zhu, Kaichen. King Abdullah University of Science and Technology; Arabia SauditaFil: Roldan, Juan Bautista. Universidad de Granada; EspañaFil: Puglisi, Francesco Maria. Università di Modena e Reggio Emilia; ItaliaFil: Larcher, Luca. Applied Materials Incorporated; ItaliaFil: Hou, Tuo-Hung. National Chiao Tung University; ChinaFil: Prodromakis, Themis. University of Southampton; Reino UnidoFil: Yang, Yuchao. Peking University; ChinaFil: Huang, Peng. Peking University; ChinaFil: Wan, Tianqing. Hong Kong Polytechnic University; Hong KongFil: Chai, Yang. Hong Kong Polytechnic University; Hong KongAmerican Chemical Society2021-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/166558Lanza, Rodolfo Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; et al.; Standards for the Characterization of Endurance in Resistive Switching Devices; American Chemical Society; ACS Nano; 15; 11; 11-2021; 17214–172311936-0851CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsnano.1c06980info:eu-repo/semantics/altIdentifier/doi/10.1021/acsnano.1c06980info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:52:22Zoai:ri.conicet.gov.ar:11336/166558instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:52:22.693CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv	Standards for the Characterization of Endurance in Resistive Switching Devices
title	Standards for the Characterization of Endurance in Resistive Switching Devices
spellingShingle	Standards for the Characterization of Endurance in Resistive Switching Devices Lanza, Rodolfo Mario CHARACTERIZATION ENDURANCE MEMORY MEMRISTOR METAL-OXIDE RELIABILITY RESISTIVE SWITCHING VARIABILITY
title_short	Standards for the Characterization of Endurance in Resistive Switching Devices
title_full	Standards for the Characterization of Endurance in Resistive Switching Devices
title_fullStr	Standards for the Characterization of Endurance in Resistive Switching Devices
title_full_unstemmed	Standards for the Characterization of Endurance in Resistive Switching Devices
title_sort	Standards for the Characterization of Endurance in Resistive Switching Devices
dc.creator.none.fl_str_mv	Lanza, Rodolfo Mario Waser, Rainer Ielmini, Daniele Yang, J. Joshua Goux, Ludovic Suñe, Jordi Kenyon, Anthony Joseph Mehonic, Adnan Spiga, Sabina Rana, Vikas Wiefels, Stefan Menzel, Stephan Valov, Ilia Villena, Marco A. Miranda, Enrique Jing, Xu Campabadal, Francesca Gonzalez, Mireia B. Aguirre, Fernando Leonel Palumbo, Felix Roberto Mario Zhu, Kaichen Roldan, Juan Bautista Puglisi, Francesco Maria Larcher, Luca Hou, Tuo-Hung Prodromakis, Themis Yang, Yuchao Huang, Peng Wan, Tianqing Chai, Yang
author	Lanza, Rodolfo Mario
author_facet	Lanza, Rodolfo Mario Waser, Rainer Ielmini, Daniele Yang, J. Joshua Goux, Ludovic Suñe, Jordi Kenyon, Anthony Joseph Mehonic, Adnan Spiga, Sabina Rana, Vikas Wiefels, Stefan Menzel, Stephan Valov, Ilia Villena, Marco A. Miranda, Enrique Jing, Xu Campabadal, Francesca Gonzalez, Mireia B. Aguirre, Fernando Leonel Palumbo, Felix Roberto Mario Zhu, Kaichen Roldan, Juan Bautista Puglisi, Francesco Maria Larcher, Luca Hou, Tuo-Hung Prodromakis, Themis Yang, Yuchao Huang, Peng Wan, Tianqing Chai, Yang
author_role	author
author2	Waser, Rainer Ielmini, Daniele Yang, J. Joshua Goux, Ludovic Suñe, Jordi Kenyon, Anthony Joseph Mehonic, Adnan Spiga, Sabina Rana, Vikas Wiefels, Stefan Menzel, Stephan Valov, Ilia Villena, Marco A. Miranda, Enrique Jing, Xu Campabadal, Francesca Gonzalez, Mireia B. Aguirre, Fernando Leonel Palumbo, Felix Roberto Mario Zhu, Kaichen Roldan, Juan Bautista Puglisi, Francesco Maria Larcher, Luca Hou, Tuo-Hung Prodromakis, Themis Yang, Yuchao Huang, Peng Wan, Tianqing Chai, Yang
author2_role	author author author author author author author author author author author author author author author author author author author author author author author author author author author author author
dc.subject.none.fl_str_mv	CHARACTERIZATION ENDURANCE MEMORY MEMRISTOR METAL-OXIDE RELIABILITY RESISTIVE SWITCHING VARIABILITY
topic	CHARACTERIZATION ENDURANCE MEMORY MEMRISTOR METAL-OXIDE RELIABILITY RESISTIVE SWITCHING VARIABILITY
purl_subject.fl_str_mv	https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv	Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products. Fil: Lanza, Rodolfo Mario. King Abdullah University of Science and Technology; Arabia Saudita Fil: Waser, Rainer. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania. Rwth Aachen University; Alemania Fil: Ielmini, Daniele. Politecnico di Milano; Italia Fil: Yang, J. Joshua. University of Southern California; Estados Unidos Fil: Goux, Ludovic. Interuniversity Microelectronics Centre; Bélgica Fil: Suñe, Jordi. Universitat Autònoma de Barcelona; España Fil: Kenyon, Anthony Joseph. Colegio Universitario de Londres; Reino Unido Fil: Mehonic, Adnan. Colegio Universitario de Londres; Reino Unido Fil: Spiga, Sabina. Consiglio Nazionale delle Ricerche; Italia. Istituto per la Microelettronica e Microsistemi; Italia Fil: Rana, Vikas. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Wiefels, Stefan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Menzel, Stephan. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Valov, Ilia. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemania Fil: Villena, Marco A.. Applied Materials Incorporated; Italia Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España Fil: Jing, Xu. Southeast University; China Fil: Campabadal, Francesca. Consejo Superior de Investigaciones Científicas; España Fil: Gonzalez, Mireia B.. Consejo Superior de Investigaciones Científicas; España Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina Fil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina Fil: Zhu, Kaichen. King Abdullah University of Science and Technology; Arabia Saudita Fil: Roldan, Juan Bautista. Universidad de Granada; España Fil: Puglisi, Francesco Maria. Università di Modena e Reggio Emilia; Italia Fil: Larcher, Luca. Applied Materials Incorporated; Italia Fil: Hou, Tuo-Hung. National Chiao Tung University; China Fil: Prodromakis, Themis. University of Southampton; Reino Unido Fil: Yang, Yuchao. Peking University; China Fil: Huang, Peng. Peking University; China Fil: Wan, Tianqing. Hong Kong Polytechnic University; Hong Kong Fil: Chai, Yang. Hong Kong Polytechnic University; Hong Kong
description	Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
publishDate	2021
dc.date.none.fl_str_mv	2021-11
dc.type.none.fl_str_mv	info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo
format	article
status_str	publishedVersion
dc.identifier.none.fl_str_mv	http://hdl.handle.net/11336/166558 Lanza, Rodolfo Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; et al.; Standards for the Characterization of Endurance in Resistive Switching Devices; American Chemical Society; ACS Nano; 15; 11; 11-2021; 17214–17231 1936-0851 CONICET Digital CONICET
url	http://hdl.handle.net/11336/166558
identifier_str_mv	Lanza, Rodolfo Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; et al.; Standards for the Characterization of Endurance in Resistive Switching Devices; American Chemical Society; ACS Nano; 15; 11; 11-2021; 17214–17231 1936-0851 CONICET Digital CONICET
dc.language.none.fl_str_mv	eng
language	eng
dc.relation.none.fl_str_mv	info:eu-repo/semantics/altIdentifier/url/https://pubs.acs.org/doi/10.1021/acsnano.1c06980 info:eu-repo/semantics/altIdentifier/doi/10.1021/acsnano.1c06980
dc.rights.none.fl_str_mv	info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
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dc.format.none.fl_str_mv	application/pdf application/pdf application/pdf
dc.publisher.none.fl_str_mv	American Chemical Society
publisher.none.fl_str_mv	American Chemical Society
dc.source.none.fl_str_mv	reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str	CONICET Digital (CONICET)
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instname_str	Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv	CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv	dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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Standards for the Characterization of Endurance in Resistive Switching Devices

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