MOS device chemical response reversal with temperature

Autores
Lombardi, Rina; Aragon, Ricardo
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina
Fil: Aragon, Ricardo. Universidad Nacional de San Martín; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Materia
Chemical Sensitivity
Mos Capacitors
Response Reversal
Threshold Voltage
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/81936
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/81936
network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling MOS device chemical response reversal with temperatureLombardi, RinaAragon, RicardoChemical SensitivityMos CapacitorsResponse ReversalThreshold Voltagehttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; ArgentinaFil: Aragon, Ricardo. Universidad Nacional de San Martín; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaElsevier Science Sa2010-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/81936Lombardi, Rina; Aragon, Ricardo; MOS device chemical response reversal with temperature; Elsevier Science Sa; Sensors and Actuators B: Chemical; 144; 2; 2-2010; 457-4610925-4005CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.snb.2009.03.072info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925400509002998info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-17T11:50:55Zoai:ri.conicet.gov.ar:11336/81936instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-17 11:50:55.245CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv MOS device chemical response reversal with temperature
title MOS device chemical response reversal with temperature
spellingShingle MOS device chemical response reversal with temperature
Lombardi, Rina
Chemical Sensitivity
Mos Capacitors
Response Reversal
Threshold Voltage
title_short MOS device chemical response reversal with temperature
title_full MOS device chemical response reversal with temperature
title_fullStr MOS device chemical response reversal with temperature
title_full_unstemmed MOS device chemical response reversal with temperature
title_sort MOS device chemical response reversal with temperature
dc.creator.none.fl_str_mv Lombardi, Rina
Aragon, Ricardo
author Lombardi, Rina
author_facet Lombardi, Rina
Aragon, Ricardo
author_role author
author2 Aragon, Ricardo
author2_role author
dc.subject.none.fl_str_mv Chemical Sensitivity
Mos Capacitors
Response Reversal
Threshold Voltage
topic Chemical Sensitivity
Mos Capacitors
Response Reversal
Threshold Voltage
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina
Fil: Aragon, Ricardo. Universidad Nacional de San Martín; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
description Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
publishDate 2010
dc.date.none.fl_str_mv 2010-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/81936
Lombardi, Rina; Aragon, Ricardo; MOS device chemical response reversal with temperature; Elsevier Science Sa; Sensors and Actuators B: Chemical; 144; 2; 2-2010; 457-461
0925-4005
CONICET Digital
CONICET
url http://hdl.handle.net/11336/81936
identifier_str_mv Lombardi, Rina; Aragon, Ricardo; MOS device chemical response reversal with temperature; Elsevier Science Sa; Sensors and Actuators B: Chemical; 144; 2; 2-2010; 457-461
0925-4005
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.snb.2009.03.072
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925400509002998
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1843606855843053568
score 13.001348

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