Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

Autores
Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; Faigon, Adrian Nestor
Año de publicación
2011
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.
Fil: Carbonetto, Sebastián Horacio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: García Inza, Mariano Andrés. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Lipovetzky, José. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Redin, Eduardo Gabriel. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Sambuco Salomone, Lucas Ignacio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Faigon, Adrian Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Materia
DOSIMETRY
IONIZING RADIATION SENSORS
MOS DEVICES
RADIATION EFFECTS
TEMPERATURE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/193204
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/193204
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetryCarbonetto, Sebastián HoracioGarcía Inza, Mariano AndrésLipovetzky, JoséRedin, Eduardo GabrielSambuco Salomone, Lucas IgnacioFaigon, Adrian NestorDOSIMETRYIONIZING RADIATION SENSORSMOS DEVICESRADIATION EFFECTSTEMPERATUREhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.Fil: Carbonetto, Sebastián Horacio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: García Inza, Mariano Andrés. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Lipovetzky, José. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Redin, Eduardo Gabriel. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Sambuco Salomone, Lucas Ignacio. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Faigon, Adrian Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaInstitute of Electrical and Electronics Engineers2011-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/193204Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; et al.; Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 6 PART 2; 9-2011; 3348-33530018-9499CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2011.2170430info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6065778info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:40:27Zoai:ri.conicet.gov.ar:11336/193204instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:40:27.92CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
spellingShingle Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
Carbonetto, Sebastián Horacio
DOSIMETRY
IONIZING RADIATION SENSORS
MOS DEVICES
RADIATION EFFECTS
TEMPERATURE
title_short Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_full Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_fullStr Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_full_unstemmed Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
title_sort Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
dc.creator.none.fl_str_mv Carbonetto, Sebastián Horacio
García Inza, Mariano Andrés
Lipovetzky, José
Redin, Eduardo Gabriel
Sambuco Salomone, Lucas Ignacio
Faigon, Adrian Nestor
author Carbonetto, Sebastián Horacio
author_facet Carbonetto, Sebastián Horacio
García Inza, Mariano Andrés
Lipovetzky, José
Redin, Eduardo Gabriel
Sambuco Salomone, Lucas Ignacio
Faigon, Adrian Nestor
author_role author
author2 García Inza, Mariano Andrés
Lipovetzky, José
Redin, Eduardo Gabriel
Sambuco Salomone, Lucas Ignacio
Faigon, Adrian Nestor
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv DOSIMETRY
IONIZING RADIATION SENSORS
MOS DEVICES
RADIATION EFFECTS
TEMPERATURE
topic DOSIMETRY
IONIZING RADIATION SENSORS
MOS DEVICES
RADIATION EFFECTS
TEMPERATURE
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.
Fil: Carbonetto, Sebastián Horacio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: García Inza, Mariano Andrés. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Lipovetzky, José. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Redin, Eduardo Gabriel. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Sambuco Salomone, Lucas Ignacio. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Faigon, Adrian Nestor. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
description In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.
publishDate 2011
dc.date.none.fl_str_mv 2011-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/193204
Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; et al.; Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 6 PART 2; 9-2011; 3348-3353
0018-9499
CONICET Digital
CONICET
url http://hdl.handle.net/11336/193204
identifier_str_mv Carbonetto, Sebastián Horacio; García Inza, Mariano Andrés; Lipovetzky, José; Redin, Eduardo Gabriel; Sambuco Salomone, Lucas Ignacio; et al.; Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry; Institute of Electrical and Electronics Engineers; Ieee Transactions on Nuclear Science; 58; 6 PART 2; 9-2011; 3348-3353
0018-9499
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/TNS.2011.2170430
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/6065778
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613280533839872
score 13.070432

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