MOS Device Chemical Response to Acceptor Stimuli

Autores
Lombardi, Rina; Aragon, Ricardo; Medina, Hector A.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Nacional de San Martín; Argentina
Fil: Medina, Hector A.. HAMdesign; Argentina
Materia
Chemical Sensors
Gas Detectors
Mos Devices
No2 So2
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/81988
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/81988
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling MOS Device Chemical Response to Acceptor StimuliLombardi, RinaAragon, RicardoMedina, Hector A.Chemical SensorsGas DetectorsMos DevicesNo2 So2https://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Nacional de San Martín; ArgentinaFil: Medina, Hector A.. HAMdesign; ArgentinaInternational Frequency Sensor Association2012-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/81988Lombardi, Rina; Aragon, Ricardo; Medina, Hector A.; MOS Device Chemical Response to Acceptor Stimuli; International Frequency Sensor Association; Sensors & Transducers Journal; 147; 12; 12-2012; 143-1501726-5479CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.sensorsportal.com/HTML/DIGEST/P_1104.htminfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:56:45Zoai:ri.conicet.gov.ar:11336/81988instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:56:45.971CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv MOS Device Chemical Response to Acceptor Stimuli
title MOS Device Chemical Response to Acceptor Stimuli
spellingShingle MOS Device Chemical Response to Acceptor Stimuli
Lombardi, Rina
Chemical Sensors
Gas Detectors
Mos Devices
No2 So2
title_short MOS Device Chemical Response to Acceptor Stimuli
title_full MOS Device Chemical Response to Acceptor Stimuli
title_fullStr MOS Device Chemical Response to Acceptor Stimuli
title_full_unstemmed MOS Device Chemical Response to Acceptor Stimuli
title_sort MOS Device Chemical Response to Acceptor Stimuli
dc.creator.none.fl_str_mv Lombardi, Rina
Aragon, Ricardo
Medina, Hector A.
author Lombardi, Rina
author_facet Lombardi, Rina
Aragon, Ricardo
Medina, Hector A.
author_role author
author2 Aragon, Ricardo
Medina, Hector A.
author2_role author
author
dc.subject.none.fl_str_mv Chemical Sensors
Gas Detectors
Mos Devices
No2 So2
topic Chemical Sensors
Gas Detectors
Mos Devices
No2 So2
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Nacional de San Martín; Argentina
Fil: Medina, Hector A.. HAMdesign; Argentina
description Gap gate MOS capacitors exhibit changes in their state of charge, monitored by positive voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to SO2 or NO2 concentration in air. Chemically induced charges are negative and their surface densities are twice as high for SO2 as those obtained for NO2, consistently with doubly charged anions; dynamic range is correspondingly halved. Both responses are mediated by associative chemisorption with oxygen.
publishDate 2012
dc.date.none.fl_str_mv 2012-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/81988
Lombardi, Rina; Aragon, Ricardo; Medina, Hector A.; MOS Device Chemical Response to Acceptor Stimuli; International Frequency Sensor Association; Sensors & Transducers Journal; 147; 12; 12-2012; 143-150
1726-5479
CONICET Digital
CONICET
url http://hdl.handle.net/11336/81988
identifier_str_mv Lombardi, Rina; Aragon, Ricardo; Medina, Hector A.; MOS Device Chemical Response to Acceptor Stimuli; International Frequency Sensor Association; Sensors & Transducers Journal; 147; 12; 12-2012; 143-150
1726-5479
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://www.sensorsportal.com/HTML/DIGEST/P_1104.htm
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv International Frequency Sensor Association
publisher.none.fl_str_mv International Frequency Sensor Association
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613702529056768
score 13.070432

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