A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features

Autores
Bueno, Paulo R.; Tararan, Ronald; Parra, Rodrigo; Joanni, Ednan; Ramírez, Miguel A.; Ribeiro, Willian C.; Longo, Elson; Varela, José A.
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO´s huge dielectric constant coexisting with semiconducting features.
Fil: Bueno, Paulo R.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Tararan, Ronald. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Parra, Rodrigo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Joanni, Ednan. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ramírez, Miguel A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ribeiro, Willian C.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Longo, Elson. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Varela, José A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Materia
Cacu3ti4o12
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/66566
Acceder
id CONICETDig_b04174363067a4e4241040e3d25f9ad2
oai_identifier_str oai:ri.conicet.gov.ar:11336/66566
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent featuresBueno, Paulo R.Tararan, RonaldParra, RodrigoJoanni, EdnanRamírez, Miguel A.Ribeiro, Willian C.Longo, ElsonVarela, José A.Cacu3ti4o12This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO´s huge dielectric constant coexisting with semiconducting features.Fil: Bueno, Paulo R.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Tararan, Ronald. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Parra, Rodrigo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Joanni, Ednan. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Ramírez, Miguel A.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Ribeiro, Willian C.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Longo, Elson. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilFil: Varela, José A.. Universidade Estadual Paulista Julio de Mesquita Filho; BrasilIOP Publishing2009-02-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/66566Bueno, Paulo R.; Tararan, Ronald; Parra, Rodrigo; Joanni, Ednan; Ramírez, Miguel A.; et al.; A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features; IOP Publishing; Journal of Physics D: Applied Physics; 42; 5; 9-2-2009; 1-90022-3727CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/42/5/055404info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/42/5/055404info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:40:36Zoai:ri.conicet.gov.ar:11336/66566instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:40:36.532CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
title A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
spellingShingle A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
Bueno, Paulo R.
Cacu3ti4o12
title_short A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
title_full A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
title_fullStr A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
title_full_unstemmed A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
title_sort A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
dc.creator.none.fl_str_mv Bueno, Paulo R.
Tararan, Ronald
Parra, Rodrigo
Joanni, Ednan
Ramírez, Miguel A.
Ribeiro, Willian C.
Longo, Elson
Varela, José A.
author Bueno, Paulo R.
author_facet Bueno, Paulo R.
Tararan, Ronald
Parra, Rodrigo
Joanni, Ednan
Ramírez, Miguel A.
Ribeiro, Willian C.
Longo, Elson
Varela, José A.
author_role author
author2 Tararan, Ronald
Parra, Rodrigo
Joanni, Ednan
Ramírez, Miguel A.
Ribeiro, Willian C.
Longo, Elson
Varela, José A.
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Cacu3ti4o12
topic Cacu3ti4o12
dc.description.none.fl_txt_mv This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO´s huge dielectric constant coexisting with semiconducting features.
Fil: Bueno, Paulo R.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Tararan, Ronald. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Parra, Rodrigo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Joanni, Ednan. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ramírez, Miguel A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Ribeiro, Willian C.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Longo, Elson. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
Fil: Varela, José A.. Universidade Estadual Paulista Julio de Mesquita Filho; Brasil
description This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO´s huge dielectric constant coexisting with semiconducting features.
publishDate 2009
dc.date.none.fl_str_mv 2009-02-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/66566
Bueno, Paulo R.; Tararan, Ronald; Parra, Rodrigo; Joanni, Ednan; Ramírez, Miguel A.; et al.; A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features; IOP Publishing; Journal of Physics D: Applied Physics; 42; 5; 9-2-2009; 1-9
0022-3727
CONICET Digital
CONICET
url http://hdl.handle.net/11336/66566
identifier_str_mv Bueno, Paulo R.; Tararan, Ronald; Parra, Rodrigo; Joanni, Ednan; Ramírez, Miguel A.; et al.; A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features; IOP Publishing; Journal of Physics D: Applied Physics; 42; 5; 9-2-2009; 1-9
0022-3727
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/42/5/055404
info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/42/5/055404
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613284281450496
score 13.070432

Publicaciones similares