Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering

Autores
de la Rubia, M. A.; Leret, P.; del Campo, A.; Alonso, Roberto Emilio; Lopez Garcia, Alberto Raul; Fernández, J. F.; de Frutos, J.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
CaCu3(Ti4−xHfx)O12 ceramics (x = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x > 0.04 for CS and x > 0.1 for RS, a secondary phase HfTiO4 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.
Fil: de la Rubia, M. A.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: Leret, P.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: del Campo, A.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: Alonso, Roberto Emilio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; Argentina
Fil: Lopez Garcia, Alberto Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; Argentina
Fil: Fernández, J. F.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: de Frutos, J.. Universidad Politécnica de Madrid; España
Materia
CaCu3Ti4O12
Reactive sintering
Dielectric properties
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/268844
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/268844
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sinteringde la Rubia, M. A.Leret, P.del Campo, A.Alonso, Roberto EmilioLopez Garcia, Alberto RaulFernández, J. F.de Frutos, J.CaCu3Ti4O12Reactive sinteringDielectric propertieshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1CaCu3(Ti4−xHfx)O12 ceramics (x = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x > 0.04 for CS and x > 0.1 for RS, a secondary phase HfTiO4 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.Fil: de la Rubia, M. A.. Instituto de Cerámica y Vidrio de Madrid; EspañaFil: Leret, P.. Instituto de Cerámica y Vidrio de Madrid; EspañaFil: del Campo, A.. Instituto de Cerámica y Vidrio de Madrid; EspañaFil: Alonso, Roberto Emilio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; ArgentinaFil: Lopez Garcia, Alberto Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; ArgentinaFil: Fernández, J. F.. Instituto de Cerámica y Vidrio de Madrid; EspañaFil: de Frutos, J.. Universidad Politécnica de Madrid; EspañaElsevier2012-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/268844de la Rubia, M. A.; Leret, P.; del Campo, A.; Alonso, Roberto Emilio; Lopez Garcia, Alberto Raul; et al.; Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering; Elsevier; Journal of the European Ceramic Society; 32; 8; 7-2012; 1691-16990955-2219CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0955221912000386info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jeurceramsoc.2012.01.024info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:07:16Zoai:ri.conicet.gov.ar:11336/268844instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:07:16.386CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
title Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
spellingShingle Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
de la Rubia, M. A.
CaCu3Ti4O12
Reactive sintering
Dielectric properties
title_short Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
title_full Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
title_fullStr Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
title_full_unstemmed Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
title_sort Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering
dc.creator.none.fl_str_mv de la Rubia, M. A.
Leret, P.
del Campo, A.
Alonso, Roberto Emilio
Lopez Garcia, Alberto Raul
Fernández, J. F.
de Frutos, J.
author de la Rubia, M. A.
author_facet de la Rubia, M. A.
Leret, P.
del Campo, A.
Alonso, Roberto Emilio
Lopez Garcia, Alberto Raul
Fernández, J. F.
de Frutos, J.
author_role author
author2 Leret, P.
del Campo, A.
Alonso, Roberto Emilio
Lopez Garcia, Alberto Raul
Fernández, J. F.
de Frutos, J.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv CaCu3Ti4O12
Reactive sintering
Dielectric properties
topic CaCu3Ti4O12
Reactive sintering
Dielectric properties
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv CaCu3(Ti4−xHfx)O12 ceramics (x = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x > 0.04 for CS and x > 0.1 for RS, a secondary phase HfTiO4 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.
Fil: de la Rubia, M. A.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: Leret, P.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: del Campo, A.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: Alonso, Roberto Emilio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; Argentina
Fil: Lopez Garcia, Alberto Raul. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; Argentina
Fil: Fernández, J. F.. Instituto de Cerámica y Vidrio de Madrid; España
Fil: de Frutos, J.. Universidad Politécnica de Madrid; España
description CaCu3(Ti4−xHfx)O12 ceramics (x = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x > 0.04 for CS and x > 0.1 for RS, a secondary phase HfTiO4 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.
publishDate 2012
dc.date.none.fl_str_mv 2012-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/268844
de la Rubia, M. A.; Leret, P.; del Campo, A.; Alonso, Roberto Emilio; Lopez Garcia, Alberto Raul; et al.; Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering; Elsevier; Journal of the European Ceramic Society; 32; 8; 7-2012; 1691-1699
0955-2219
CONICET Digital
CONICET
url http://hdl.handle.net/11336/268844
identifier_str_mv de la Rubia, M. A.; Leret, P.; del Campo, A.; Alonso, Roberto Emilio; Lopez Garcia, Alberto Raul; et al.; Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering; Elsevier; Journal of the European Ceramic Society; 32; 8; 7-2012; 1691-1699
0955-2219
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/abs/pii/S0955221912000386
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jeurceramsoc.2012.01.024
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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