Physical mechanism of progressive breakdown in gate oxides

Autores
Palumbo, Félix Roberto Mario; Lombardo, Salvatore; Eizenberg, Moshe
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of gate dielectrics occurs in the regime of relatively low voltage and very high electric field; this is of enormous technological importance, and thus widely investigated but still not well understood. Such BD is characterized by a gradual, progressive growth of the gate leakage through a localized BD spot. In this paper, we report for the first time experimental data and a model which provide understanding of the main physical mechanism responsible for the progressive BD growth. We demonstrate the ability to control the breakdown growth rate of a number of gate dielectrics and provide a physical model of the observed behavior, allowing to considerably improve the reliability margins of CMOS circuits by choosing a correct combination of voltage, thickness, and thermal conductivity of the gate dielectric.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel
Fil: Lombardo, Salvatore. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
Materia
Metal insulator semiconductor structures
Dielectric thin films
Ozone
High voltage direct current transmission
Dielectric breakdown
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/35508
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/35508
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Physical mechanism of progressive breakdown in gate oxidesPalumbo, Félix Roberto MarioLombardo, SalvatoreEizenberg, MosheMetal insulator semiconductor structuresDielectric thin filmsOzoneHigh voltage direct current transmissionDielectric breakdownhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of gate dielectrics occurs in the regime of relatively low voltage and very high electric field; this is of enormous technological importance, and thus widely investigated but still not well understood. Such BD is characterized by a gradual, progressive growth of the gate leakage through a localized BD spot. In this paper, we report for the first time experimental data and a model which provide understanding of the main physical mechanism responsible for the progressive BD growth. We demonstrate the ability to control the breakdown growth rate of a number of gate dielectrics and provide a physical model of the observed behavior, allowing to considerably improve the reliability margins of CMOS circuits by choosing a correct combination of voltage, thickness, and thermal conductivity of the gate dielectric.Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; IsraelFil: Lombardo, Salvatore. Istituto per la Microelettronica e Microsistemi. Catania; ItaliaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; IsraelAmerican Institute of Physics2014-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/35508Palumbo, Félix Roberto Mario; Lombardo, Salvatore; Eizenberg, Moshe; Physical mechanism of progressive breakdown in gate oxides; American Institute of Physics; Journal of Applied Physics; 115; 22; 6-2014; 1-70021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4882116info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4882116info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:18:10Zoai:ri.conicet.gov.ar:11336/35508instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:18:10.299CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Physical mechanism of progressive breakdown in gate oxides
title Physical mechanism of progressive breakdown in gate oxides
spellingShingle Physical mechanism of progressive breakdown in gate oxides
Palumbo, Félix Roberto Mario
Metal insulator semiconductor structures
Dielectric thin films
Ozone
High voltage direct current transmission
Dielectric breakdown
title_short Physical mechanism of progressive breakdown in gate oxides
title_full Physical mechanism of progressive breakdown in gate oxides
title_fullStr Physical mechanism of progressive breakdown in gate oxides
title_full_unstemmed Physical mechanism of progressive breakdown in gate oxides
title_sort Physical mechanism of progressive breakdown in gate oxides
dc.creator.none.fl_str_mv Palumbo, Félix Roberto Mario
Lombardo, Salvatore
Eizenberg, Moshe
author Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Lombardo, Salvatore
Eizenberg, Moshe
author_role author
author2 Lombardo, Salvatore
Eizenberg, Moshe
author2_role author
author
dc.subject.none.fl_str_mv Metal insulator semiconductor structures
Dielectric thin films
Ozone
High voltage direct current transmission
Dielectric breakdown
topic Metal insulator semiconductor structures
Dielectric thin films
Ozone
High voltage direct current transmission
Dielectric breakdown
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of gate dielectrics occurs in the regime of relatively low voltage and very high electric field; this is of enormous technological importance, and thus widely investigated but still not well understood. Such BD is characterized by a gradual, progressive growth of the gate leakage through a localized BD spot. In this paper, we report for the first time experimental data and a model which provide understanding of the main physical mechanism responsible for the progressive BD growth. We demonstrate the ability to control the breakdown growth rate of a number of gate dielectrics and provide a physical model of the observed behavior, allowing to considerably improve the reliability margins of CMOS circuits by choosing a correct combination of voltage, thickness, and thermal conductivity of the gate dielectric.
Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel
Fil: Lombardo, Salvatore. Istituto per la Microelettronica e Microsistemi. Catania; Italia
Fil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israel
description The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In particular, in advanced complementary metal-oxide-semiconductor (CMOS) circuits, the BD of gate dielectrics occurs in the regime of relatively low voltage and very high electric field; this is of enormous technological importance, and thus widely investigated but still not well understood. Such BD is characterized by a gradual, progressive growth of the gate leakage through a localized BD spot. In this paper, we report for the first time experimental data and a model which provide understanding of the main physical mechanism responsible for the progressive BD growth. We demonstrate the ability to control the breakdown growth rate of a number of gate dielectrics and provide a physical model of the observed behavior, allowing to considerably improve the reliability margins of CMOS circuits by choosing a correct combination of voltage, thickness, and thermal conductivity of the gate dielectric.
publishDate 2014
dc.date.none.fl_str_mv 2014-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/35508
Palumbo, Félix Roberto Mario; Lombardo, Salvatore; Eizenberg, Moshe; Physical mechanism of progressive breakdown in gate oxides; American Institute of Physics; Journal of Applied Physics; 115; 22; 6-2014; 1-7
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/35508
identifier_str_mv Palumbo, Félix Roberto Mario; Lombardo, Salvatore; Eizenberg, Moshe; Physical mechanism of progressive breakdown in gate oxides; American Institute of Physics; Journal of Applied Physics; 115; 22; 6-2014; 1-7
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4882116
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4882116
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.993085

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