Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements

Autores
Longeaud, C.; Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Kleider, J. P.
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations.
Fil: Longeaud, C.. Universités Paris VI et XI; Francia
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Kleider, J. P.. Universités Paris VI et XI; Francia
Materia
Thin Films
Photoconductivity
Computer Simulation
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/21692
Acceder
id CONICETDig_419dc47706b6d6c0be571c123373a445
oai_identifier_str oai:ri.conicet.gov.ar:11336/21692
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurementsLongeaud, C.Schmidt, Javier AlejandroKoropecki, Roberto RomanKleider, J. P.Thin FilmsPhotoconductivityComputer Simulationhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations.Fil: Longeaud, C.. Universités Paris VI et XI; FranciaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Kleider, J. P.. Universités Paris VI et XI; FranciaNatl Inst Optoelectronics2009-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/21692Longeaud, C.; Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Kleider, J. P.; Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements; Natl Inst Optoelectronics; Journal Of Optoelectronics And Advanced Materials; 11; 9; 12-2009; 1064-10711454-4164CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://joam.inoe.ro/download.php?idu=2028info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:21:19Zoai:ri.conicet.gov.ar:11336/21692instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:21:20.168CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
title Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
spellingShingle Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
Longeaud, C.
Thin Films
Photoconductivity
Computer Simulation
title_short Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
title_full Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
title_fullStr Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
title_full_unstemmed Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
title_sort Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements
dc.creator.none.fl_str_mv Longeaud, C.
Schmidt, Javier Alejandro
Koropecki, Roberto Roman
Kleider, J. P.
author Longeaud, C.
author_facet Longeaud, C.
Schmidt, Javier Alejandro
Koropecki, Roberto Roman
Kleider, J. P.
author_role author
author2 Schmidt, Javier Alejandro
Koropecki, Roberto Roman
Kleider, J. P.
author2_role author
author
author
dc.subject.none.fl_str_mv Thin Films
Photoconductivity
Computer Simulation
topic Thin Films
Photoconductivity
Computer Simulation
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations.
Fil: Longeaud, C.. Universités Paris VI et XI; Francia
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Kleider, J. P.. Universités Paris VI et XI; Francia
description In this paper, after a short recall of the information that can be extracted from different experiments based on the photoconductivity properties of a semiconductor, we present experimental results obtained on a thin film of hydrogenated amorphous silicon in the as-deposited, light-soaked and annealed states. We show that, taking advantage of the apparent discrepancies between the results of dc photoconductivity and modulated photoconductivity, density of states distributions as well as some of their capture coefficients can be deduced. The evolution of these quantities with light-soaking and annealing is also shown. The experimental results are also illustrated by means of numerical simulations.
publishDate 2009
dc.date.none.fl_str_mv 2009-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/21692
Longeaud, C.; Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Kleider, J. P.; Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements; Natl Inst Optoelectronics; Journal Of Optoelectronics And Advanced Materials; 11; 9; 12-2009; 1064-1071
1454-4164
CONICET Digital
CONICET
url http://hdl.handle.net/11336/21692
identifier_str_mv Longeaud, C.; Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Kleider, J. P.; Determination of the hydrogenated amorphous silicon density of states parameters from photoconductivity measurements; Natl Inst Optoelectronics; Journal Of Optoelectronics And Advanced Materials; 11; 9; 12-2009; 1064-1071
1454-4164
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://joam.inoe.ro/download.php?idu=2028
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Natl Inst Optoelectronics
publisher.none.fl_str_mv Natl Inst Optoelectronics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614201417400320
score 13.070432

Publicaciones similares