Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
- Autores
- Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.
- Año de publicación
- 2005
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Longeaud, C.. Universite Paris VI et XI; Francia
Fil: Kleider, J.. Universite Paris VI et XI; Francia - Materia
-
Photoconductivity
Density of States
Semiconductors
Thin Films - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/23281
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spelling |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductorsSchmidt, Javier AlejandroLongeaud, C.Kleider, J.PhotoconductivityDensity of StatesSemiconductorsThin Filmshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Longeaud, C.. Universite Paris VI et XI; FranciaFil: Kleider, J.. Universite Paris VI et XI; FranciaElsevier Science Sa2005-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/23281Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-3240040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.08.060info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005011983info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:50:22Zoai:ri.conicet.gov.ar:11336/23281instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:50:23.24CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
title |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
spellingShingle |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors Schmidt, Javier Alejandro Photoconductivity Density of States Semiconductors Thin Films |
title_short |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
title_full |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
title_fullStr |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
title_full_unstemmed |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
title_sort |
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors |
dc.creator.none.fl_str_mv |
Schmidt, Javier Alejandro Longeaud, C. Kleider, J. |
author |
Schmidt, Javier Alejandro |
author_facet |
Schmidt, Javier Alejandro Longeaud, C. Kleider, J. |
author_role |
author |
author2 |
Longeaud, C. Kleider, J. |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Photoconductivity Density of States Semiconductors Thin Films |
topic |
Photoconductivity Density of States Semiconductors Thin Films |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample. Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Longeaud, C.. Universite Paris VI et XI; Francia Fil: Kleider, J.. Universite Paris VI et XI; Francia |
description |
We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample. |
publishDate |
2005 |
dc.date.none.fl_str_mv |
2005-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/23281 Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-324 0040-6090 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/23281 |
identifier_str_mv |
Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-324 0040-6090 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.08.060 info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005011983 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613553522212864 |
score |
13.070432 |