Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors

Autores
Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.
Año de publicación
2005
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Longeaud, C.. Universite Paris VI et XI; Francia
Fil: Kleider, J.. Universite Paris VI et XI; Francia
Materia
Photoconductivity
Density of States
Semiconductors
Thin Films
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/23281
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/23281
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductorsSchmidt, Javier AlejandroLongeaud, C.Kleider, J.PhotoconductivityDensity of StatesSemiconductorsThin Filmshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Longeaud, C.. Universite Paris VI et XI; FranciaFil: Kleider, J.. Universite Paris VI et XI; FranciaElsevier Science Sa2005-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/23281Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-3240040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.08.060info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005011983info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:19:44Zoai:ri.conicet.gov.ar:11336/23281instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:19:44.712CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
title Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
spellingShingle Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
Schmidt, Javier Alejandro
Photoconductivity
Density of States
Semiconductors
Thin Films
title_short Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
title_full Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
title_fullStr Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
title_full_unstemmed Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
title_sort Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
dc.creator.none.fl_str_mv Schmidt, Javier Alejandro
Longeaud, C.
Kleider, J.
author Schmidt, Javier Alejandro
author_facet Schmidt, Javier Alejandro
Longeaud, C.
Kleider, J.
author_role author
author2 Longeaud, C.
Kleider, J.
author2_role author
author
dc.subject.none.fl_str_mv Photoconductivity
Density of States
Semiconductors
Thin Films
topic Photoconductivity
Density of States
Semiconductors
Thin Films
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Longeaud, C.. Universite Paris VI et XI; Francia
Fil: Kleider, J.. Universite Paris VI et XI; Francia
description We present a method to obtain the density of states of photoconductive semiconductors based on the light-intensity dependence of the steadystate photoconductivity. A simple expression—relating the density of states at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the photoconductivity of semiconductors. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
publishDate 2005
dc.date.none.fl_str_mv 2005-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/23281
Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-324
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/23281
identifier_str_mv Schmidt, Javier Alejandro; Longeaud, C.; Kleider, J.; Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors; Elsevier Science Sa; Thin Solid Films; 493; 9-2005; 319-324
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2005.08.060
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609005011983
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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