Obtainment of the density of states in the band tails of hydrogenated amorphous silicon

Autores
Kopprio, Leonardo Hugo; Longeaud, Christophe; Schmidt, Javier Alejandro
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this work, we present two new pairs of formulas to obtain a spectroscopy of the density of states (DOS) in each band tail of hydrogenated amorphous silicon (a-Si:H) from photoconductivity-based measurements. The formulas are based on the knowledge of the small-signal recombination lifetime τ′, the characteristic decay time of the concentration of trapped carriers generated in excess by the illumination, and that can be measured by methods like the Oscillating Photocarrier Grating (OPG) or Moving Grating Technique (MGT). First, we deduce the formulas and test their accuracy by numerical simulations using typical a-Si:H parameters. Next, we characterize an a-Si:H sample using well-known methods, like Fourier transform photocurrent spectroscopy to evaluate the valence band tail and modulated photoconductivity to measure the conduction band tail. We also performed measurements of steady-state photoconductivity, steady-state photocurrent grating and MGT, for a range of generation rates. From these measurements - and taking typical values for the capture coefficients, the extended states mobilities and the DOS at the band edges - we apply the new formulas to get the band tails. We find that the results obtained from the application of our formulas are in good agreement with those found with the traditional methods for both band tails. Moreover, we show that MGT/OPG measurement to get τ′ can be avoided if one of the band tails is measured by one of the traditional methods, since the known band tail can be used to evaluate τ′ with one pair of equations, and then the other pair can be applied to get the other band tail.
Fil: Kopprio, Leonardo Hugo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Longeaud, Christophe. Universite Pierre et Marie Curie; Francia. Centre National de la Recherche Scientifique; Francia
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional del Litoral. Facultad de Ingeniería Química; Argentina
Materia
PHOTOCONDUCTIVITY
AMORPHOUS SILICON
DENSITY OF STATES
CONDENSED
SOLAR CELLS
BAND STRUCTURE
COMPUTER SIMULATION
Nivel de accesibilidad
acceso embargado
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/37954

id CONICETDig_1c26e3d7d028de059daaa6fcf5ae62c6
oai_identifier_str oai:ri.conicet.gov.ar:11336/37954
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Obtainment of the density of states in the band tails of hydrogenated amorphous siliconKopprio, Leonardo HugoLongeaud, ChristopheSchmidt, Javier AlejandroPHOTOCONDUCTIVITYAMORPHOUS SILICONDENSITY OF STATESCONDENSEDSOLAR CELLSBAND STRUCTURECOMPUTER SIMULATIONhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this work, we present two new pairs of formulas to obtain a spectroscopy of the density of states (DOS) in each band tail of hydrogenated amorphous silicon (a-Si:H) from photoconductivity-based measurements. The formulas are based on the knowledge of the small-signal recombination lifetime τ′, the characteristic decay time of the concentration of trapped carriers generated in excess by the illumination, and that can be measured by methods like the Oscillating Photocarrier Grating (OPG) or Moving Grating Technique (MGT). First, we deduce the formulas and test their accuracy by numerical simulations using typical a-Si:H parameters. Next, we characterize an a-Si:H sample using well-known methods, like Fourier transform photocurrent spectroscopy to evaluate the valence band tail and modulated photoconductivity to measure the conduction band tail. We also performed measurements of steady-state photoconductivity, steady-state photocurrent grating and MGT, for a range of generation rates. From these measurements - and taking typical values for the capture coefficients, the extended states mobilities and the DOS at the band edges - we apply the new formulas to get the band tails. We find that the results obtained from the application of our formulas are in good agreement with those found with the traditional methods for both band tails. Moreover, we show that MGT/OPG measurement to get τ′ can be avoided if one of the band tails is measured by one of the traditional methods, since the known band tail can be used to evaluate τ′ with one pair of equations, and then the other pair can be applied to get the other band tail.Fil: Kopprio, Leonardo Hugo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaFil: Longeaud, Christophe. Universite Pierre et Marie Curie; Francia. Centre National de la Recherche Scientifique; FranciaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional del Litoral. Facultad de Ingeniería Química; ArgentinaAmerican Institute of Physics2017-08info:eu-repo/date/embargoEnd/2018-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/37954Kopprio, Leonardo Hugo; Longeaud, Christophe; Schmidt, Javier Alejandro; Obtainment of the density of states in the band tails of hydrogenated amorphous silicon; American Institute of Physics; Journal of Applied Physics; 122; 8; 8-2017; 857021-85702100021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4999626info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4999626info:eu-repo/semantics/embargoedAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:21:35Zoai:ri.conicet.gov.ar:11336/37954instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:21:35.479CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
title Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
spellingShingle Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
Kopprio, Leonardo Hugo
PHOTOCONDUCTIVITY
AMORPHOUS SILICON
DENSITY OF STATES
CONDENSED
SOLAR CELLS
BAND STRUCTURE
COMPUTER SIMULATION
title_short Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
title_full Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
title_fullStr Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
title_full_unstemmed Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
title_sort Obtainment of the density of states in the band tails of hydrogenated amorphous silicon
dc.creator.none.fl_str_mv Kopprio, Leonardo Hugo
Longeaud, Christophe
Schmidt, Javier Alejandro
author Kopprio, Leonardo Hugo
author_facet Kopprio, Leonardo Hugo
Longeaud, Christophe
Schmidt, Javier Alejandro
author_role author
author2 Longeaud, Christophe
Schmidt, Javier Alejandro
author2_role author
author
dc.subject.none.fl_str_mv PHOTOCONDUCTIVITY
AMORPHOUS SILICON
DENSITY OF STATES
CONDENSED
SOLAR CELLS
BAND STRUCTURE
COMPUTER SIMULATION
topic PHOTOCONDUCTIVITY
AMORPHOUS SILICON
DENSITY OF STATES
CONDENSED
SOLAR CELLS
BAND STRUCTURE
COMPUTER SIMULATION
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this work, we present two new pairs of formulas to obtain a spectroscopy of the density of states (DOS) in each band tail of hydrogenated amorphous silicon (a-Si:H) from photoconductivity-based measurements. The formulas are based on the knowledge of the small-signal recombination lifetime τ′, the characteristic decay time of the concentration of trapped carriers generated in excess by the illumination, and that can be measured by methods like the Oscillating Photocarrier Grating (OPG) or Moving Grating Technique (MGT). First, we deduce the formulas and test their accuracy by numerical simulations using typical a-Si:H parameters. Next, we characterize an a-Si:H sample using well-known methods, like Fourier transform photocurrent spectroscopy to evaluate the valence band tail and modulated photoconductivity to measure the conduction band tail. We also performed measurements of steady-state photoconductivity, steady-state photocurrent grating and MGT, for a range of generation rates. From these measurements - and taking typical values for the capture coefficients, the extended states mobilities and the DOS at the band edges - we apply the new formulas to get the band tails. We find that the results obtained from the application of our formulas are in good agreement with those found with the traditional methods for both band tails. Moreover, we show that MGT/OPG measurement to get τ′ can be avoided if one of the band tails is measured by one of the traditional methods, since the known band tail can be used to evaluate τ′ with one pair of equations, and then the other pair can be applied to get the other band tail.
Fil: Kopprio, Leonardo Hugo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Fil: Longeaud, Christophe. Universite Pierre et Marie Curie; Francia. Centre National de la Recherche Scientifique; Francia
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina. Universidad Nacional del Litoral. Facultad de Ingeniería Química; Argentina
description In this work, we present two new pairs of formulas to obtain a spectroscopy of the density of states (DOS) in each band tail of hydrogenated amorphous silicon (a-Si:H) from photoconductivity-based measurements. The formulas are based on the knowledge of the small-signal recombination lifetime τ′, the characteristic decay time of the concentration of trapped carriers generated in excess by the illumination, and that can be measured by methods like the Oscillating Photocarrier Grating (OPG) or Moving Grating Technique (MGT). First, we deduce the formulas and test their accuracy by numerical simulations using typical a-Si:H parameters. Next, we characterize an a-Si:H sample using well-known methods, like Fourier transform photocurrent spectroscopy to evaluate the valence band tail and modulated photoconductivity to measure the conduction band tail. We also performed measurements of steady-state photoconductivity, steady-state photocurrent grating and MGT, for a range of generation rates. From these measurements - and taking typical values for the capture coefficients, the extended states mobilities and the DOS at the band edges - we apply the new formulas to get the band tails. We find that the results obtained from the application of our formulas are in good agreement with those found with the traditional methods for both band tails. Moreover, we show that MGT/OPG measurement to get τ′ can be avoided if one of the band tails is measured by one of the traditional methods, since the known band tail can be used to evaluate τ′ with one pair of equations, and then the other pair can be applied to get the other band tail.
publishDate 2017
dc.date.none.fl_str_mv 2017-08
info:eu-repo/date/embargoEnd/2018-09-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/37954
Kopprio, Leonardo Hugo; Longeaud, Christophe; Schmidt, Javier Alejandro; Obtainment of the density of states in the band tails of hydrogenated amorphous silicon; American Institute of Physics; Journal of Applied Physics; 122; 8; 8-2017; 857021-8570210
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/37954
identifier_str_mv Kopprio, Leonardo Hugo; Longeaud, Christophe; Schmidt, Javier Alejandro; Obtainment of the density of states in the band tails of hydrogenated amorphous silicon; American Institute of Physics; Journal of Applied Physics; 122; 8; 8-2017; 857021-8570210
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4999626
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4999626
dc.rights.none.fl_str_mv info:eu-repo/semantics/embargoedAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv embargoedAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614204567322624
score 13.070432