Density of states determination from steady-state photocarrier grating measurements

Autores
Schmidt, Javier Alejandro; Longeaud, C.
Año de publicación
2004
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We present a method to obtain the density of states (DOS) of photoconductive insulators based on steady-state photocarrier grating (SSPG) measurements. A simple expression—relating the DOS at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the SSPG experiment. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Longeaud, C.. Université Paris VI et XI; Francia
Materia
PHOTOCONDUCTIVITY
DENSITY OF STATES
SEMICONDUCTORS
THIN FILMS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/27272
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Density of states determination from steady-state photocarrier grating measurementsSchmidt, Javier AlejandroLongeaud, C.PHOTOCONDUCTIVITYDENSITY OF STATESSEMICONDUCTORSTHIN FILMShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We present a method to obtain the density of states (DOS) of photoconductive insulators based on steady-state photocarrier grating (SSPG) measurements. A simple expression—relating the DOS at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the SSPG experiment. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Longeaud, C.. Université Paris VI et XI; FranciaAmerican Institute of Physics2004-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27272Schmidt, Javier Alejandro; Longeaud, C.; Density of states determination from steady-state photocarrier grating measurements; American Institute of Physics; Applied Physics Letters; 85; 19; 11-2004; 4412-44140003-6951CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.1818732info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.1818732info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:34:16Zoai:ri.conicet.gov.ar:11336/27272instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:34:16.52CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Density of states determination from steady-state photocarrier grating measurements
title Density of states determination from steady-state photocarrier grating measurements
spellingShingle Density of states determination from steady-state photocarrier grating measurements
Schmidt, Javier Alejandro
PHOTOCONDUCTIVITY
DENSITY OF STATES
SEMICONDUCTORS
THIN FILMS
title_short Density of states determination from steady-state photocarrier grating measurements
title_full Density of states determination from steady-state photocarrier grating measurements
title_fullStr Density of states determination from steady-state photocarrier grating measurements
title_full_unstemmed Density of states determination from steady-state photocarrier grating measurements
title_sort Density of states determination from steady-state photocarrier grating measurements
dc.creator.none.fl_str_mv Schmidt, Javier Alejandro
Longeaud, C.
author Schmidt, Javier Alejandro
author_facet Schmidt, Javier Alejandro
Longeaud, C.
author_role author
author2 Longeaud, C.
author2_role author
dc.subject.none.fl_str_mv PHOTOCONDUCTIVITY
DENSITY OF STATES
SEMICONDUCTORS
THIN FILMS
topic PHOTOCONDUCTIVITY
DENSITY OF STATES
SEMICONDUCTORS
THIN FILMS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We present a method to obtain the density of states (DOS) of photoconductive insulators based on steady-state photocarrier grating (SSPG) measurements. A simple expression—relating the DOS at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the SSPG experiment. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Longeaud, C.. Université Paris VI et XI; Francia
description We present a method to obtain the density of states (DOS) of photoconductive insulators based on steady-state photocarrier grating (SSPG) measurements. A simple expression—relating the DOS at the electron quasi-Fermi level to measurable quantities—is deduced by performing suitable approximations from the analytical solution of the generalized equations that describe the SSPG experiment. The validity of the approximations and the applicability of the final expression are verified from numerical simulations of the process. The usefulness of the method is demonstrated by performing measurements on a standard hydrogenated amorphous silicon sample.
publishDate 2004
dc.date.none.fl_str_mv 2004-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/27272
Schmidt, Javier Alejandro; Longeaud, C.; Density of states determination from steady-state photocarrier grating measurements; American Institute of Physics; Applied Physics Letters; 85; 19; 11-2004; 4412-4414
0003-6951
CONICET Digital
CONICET
url http://hdl.handle.net/11336/27272
identifier_str_mv Schmidt, Javier Alejandro; Longeaud, C.; Density of states determination from steady-state photocarrier grating measurements; American Institute of Physics; Applied Physics Letters; 85; 19; 11-2004; 4412-4414
0003-6951
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.1818732
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/full/10.1063/1.1818732
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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