Atomic processes during Cl supersaturation etching of Si(100)-(2x1)

Autores
Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.
Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Agrawal, Abhishek. University of Illinois at Urbana; Estados Unidos
Fil: Butera, R. E.. University of Illinois at Urbana; Estados Unidos
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos
Materia
Dry Etching
Silicon
Clorine
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/34936
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/34936
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Atomic processes during Cl supersaturation etching of Si(100)-(2x1)Aldao, Celso ManuelAgrawal, AbhishekButera, R. E.Weaver, J. H.Dry EtchingSiliconClorinehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Agrawal, Abhishek. University of Illinois at Urbana; Estados UnidosFil: Butera, R. E.. University of Illinois at Urbana; Estados UnidosFil: Weaver, J. H.. University of Illinois at Urbana; Estados UnidosAmerican Physical Society2008-10-29info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/34936Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-1253030163-1829CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.79.125303info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.125303info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:18:46Zoai:ri.conicet.gov.ar:11336/34936instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:18:46.642CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
title Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
spellingShingle Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
Aldao, Celso Manuel
Dry Etching
Silicon
Clorine
title_short Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
title_full Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
title_fullStr Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
title_full_unstemmed Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
title_sort Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
dc.creator.none.fl_str_mv Aldao, Celso Manuel
Agrawal, Abhishek
Butera, R. E.
Weaver, J. H.
author Aldao, Celso Manuel
author_facet Aldao, Celso Manuel
Agrawal, Abhishek
Butera, R. E.
Weaver, J. H.
author_role author
author2 Agrawal, Abhishek
Butera, R. E.
Weaver, J. H.
author2_role author
author
author
dc.subject.none.fl_str_mv Dry Etching
Silicon
Clorine
topic Dry Etching
Silicon
Clorine
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.
Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Agrawal, Abhishek. University of Illinois at Urbana; Estados Unidos
Fil: Butera, R. E.. University of Illinois at Urbana; Estados Unidos
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos
description Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.
publishDate 2008
dc.date.none.fl_str_mv 2008-10-29
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/34936
Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-125303
0163-1829
CONICET Digital
CONICET
url http://hdl.handle.net/11336/34936
identifier_str_mv Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-125303
0163-1829
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.79.125303
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.125303
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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