Atomic processes during Cl supersaturation etching of Si(100)-(2x1)
- Autores
- Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.
- Año de publicación
- 2008
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.
Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina
Fil: Agrawal, Abhishek. University of Illinois at Urbana; Estados Unidos
Fil: Butera, R. E.. University of Illinois at Urbana; Estados Unidos
Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos - Materia
-
Dry Etching
Silicon
Clorine - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/34936
Ver los metadatos del registro completo
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Atomic processes during Cl supersaturation etching of Si(100)-(2x1)Aldao, Celso ManuelAgrawal, AbhishekButera, R. E.Weaver, J. H.Dry EtchingSiliconClorinehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process.Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Agrawal, Abhishek. University of Illinois at Urbana; Estados UnidosFil: Butera, R. E.. University of Illinois at Urbana; Estados UnidosFil: Weaver, J. H.. University of Illinois at Urbana; Estados UnidosAmerican Physical Society2008-10-29info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/34936Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-1253030163-1829CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.79.125303info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.125303info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:21:38Zoai:ri.conicet.gov.ar:11336/34936instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:21:39.119CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
title |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
spellingShingle |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) Aldao, Celso Manuel Dry Etching Silicon Clorine |
title_short |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
title_full |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
title_fullStr |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
title_full_unstemmed |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
title_sort |
Atomic processes during Cl supersaturation etching of Si(100)-(2x1) |
dc.creator.none.fl_str_mv |
Aldao, Celso Manuel Agrawal, Abhishek Butera, R. E. Weaver, J. H. |
author |
Aldao, Celso Manuel |
author_facet |
Aldao, Celso Manuel Agrawal, Abhishek Butera, R. E. Weaver, J. H. |
author_role |
author |
author2 |
Agrawal, Abhishek Butera, R. E. Weaver, J. H. |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
Dry Etching Silicon Clorine |
topic |
Dry Etching Silicon Clorine |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process. Fil: Aldao, Celso Manuel. University of Illinois at Urbana; Estados Unidos. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentina Fil: Agrawal, Abhishek. University of Illinois at Urbana; Estados Unidos Fil: Butera, R. E.. University of Illinois at Urbana; Estados Unidos Fil: Weaver, J. H.. University of Illinois at Urbana; Estados Unidos |
description |
Supersaturation etching starts with Cl insertion into Si-Si bonds of Si(100) and leads to the desorption of SiCl2 pairs. During etching, insertion occurs through a Cl2 dissociative chemisorption process mediated by single dangling bond sites created by phonon-activated electron-stimulated desorption of atomic Cl. Based on scanning tunneling microscopy results, we identify a surface species, describe its involvement in supersaturation etching, and explore the energetics that control this process. In doing so, we show that insertion occurs at room temperature and that paired dangling bonds of bare dimers also mediate this process. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-10-29 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/34936 Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-125303 0163-1829 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/34936 |
identifier_str_mv |
Aldao, Celso Manuel; Agrawal, Abhishek; Butera, R. E.; Weaver, J. H.; Atomic processes during Cl supersaturation etching of Si(100)-(2x1); American Physical Society; Physical Review B; 79; 12; 29-10-2008; 125303-125303 0163-1829 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.79.125303 info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.125303 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Physical Society |
publisher.none.fl_str_mv |
American Physical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844614205670424576 |
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13.070432 |