Metal-assisted etching of silicon molds for electroforming

Autores
Divan, Ralu; Rosenthal, Dan; Ogando, Karim; Ocola, Leonidas E.; Rosenmann, Daniel; Moldovan, Nicolaie
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.
Fil: Divan, Ralu. Argonne National Laboratory; Estados Unidos
Fil: Rosenthal, Dan. Illinois Mathematics and Science Academy; Estados Unidos
Fil: Ogando, Karim. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Bajas Temperaturas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Ocola, Leonidas E.. Argonne National Laboratory; Estados Unidos
Fil: Rosenmann, Daniel. Argonne National Laboratory; Estados Unidos
Fil: Moldovan, Nicolaie. Argonne National Laboratory; Estados Unidos. Advanced Diamond Technologies; Estados Unidos
Materia
Nanofabrication
Electroplating
Etching
Gold
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/180705
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Metal-assisted etching of silicon molds for electroformingDivan, RaluRosenthal, DanOgando, KarimOcola, Leonidas E.Rosenmann, DanielMoldovan, NicolaieNanofabricationElectroplatingEtchingGoldhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.Fil: Divan, Ralu. Argonne National Laboratory; Estados UnidosFil: Rosenthal, Dan. Illinois Mathematics and Science Academy; Estados UnidosFil: Ogando, Karim. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Bajas Temperaturas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Ocola, Leonidas E.. Argonne National Laboratory; Estados UnidosFil: Rosenmann, Daniel. Argonne National Laboratory; Estados UnidosFil: Moldovan, Nicolaie. Argonne National Laboratory; Estados Unidos. Advanced Diamond Technologies; Estados UnidosA V S Amer Inst Physics2013-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/180705Divan, Ralu; Rosenthal, Dan; Ogando, Karim; Ocola, Leonidas E.; Rosenmann, Daniel; et al.; Metal-assisted etching of silicon molds for electroforming; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology B; 31; 6; 11-2013; 1-70734-211X1071-1023CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1116/1.4821651info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/10.1116/1.4821651info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:46:27Zoai:ri.conicet.gov.ar:11336/180705instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:46:27.689CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Metal-assisted etching of silicon molds for electroforming
title Metal-assisted etching of silicon molds for electroforming
spellingShingle Metal-assisted etching of silicon molds for electroforming
Divan, Ralu
Nanofabrication
Electroplating
Etching
Gold
title_short Metal-assisted etching of silicon molds for electroforming
title_full Metal-assisted etching of silicon molds for electroforming
title_fullStr Metal-assisted etching of silicon molds for electroforming
title_full_unstemmed Metal-assisted etching of silicon molds for electroforming
title_sort Metal-assisted etching of silicon molds for electroforming
dc.creator.none.fl_str_mv Divan, Ralu
Rosenthal, Dan
Ogando, Karim
Ocola, Leonidas E.
Rosenmann, Daniel
Moldovan, Nicolaie
author Divan, Ralu
author_facet Divan, Ralu
Rosenthal, Dan
Ogando, Karim
Ocola, Leonidas E.
Rosenmann, Daniel
Moldovan, Nicolaie
author_role author
author2 Rosenthal, Dan
Ogando, Karim
Ocola, Leonidas E.
Rosenmann, Daniel
Moldovan, Nicolaie
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Nanofabrication
Electroplating
Etching
Gold
topic Nanofabrication
Electroplating
Etching
Gold
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.
Fil: Divan, Ralu. Argonne National Laboratory; Estados Unidos
Fil: Rosenthal, Dan. Illinois Mathematics and Science Academy; Estados Unidos
Fil: Ogando, Karim. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche). División Bajas Temperaturas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Ocola, Leonidas E.. Argonne National Laboratory; Estados Unidos
Fil: Rosenmann, Daniel. Argonne National Laboratory; Estados Unidos
Fil: Moldovan, Nicolaie. Argonne National Laboratory; Estados Unidos. Advanced Diamond Technologies; Estados Unidos
description Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate that the method can be used to fabricate linear Fresnel zone plates.
publishDate 2013
dc.date.none.fl_str_mv 2013-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/180705
Divan, Ralu; Rosenthal, Dan; Ogando, Karim; Ocola, Leonidas E.; Rosenmann, Daniel; et al.; Metal-assisted etching of silicon molds for electroforming; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology B; 31; 6; 11-2013; 1-7
0734-211X
1071-1023
CONICET Digital
CONICET
url http://hdl.handle.net/11336/180705
identifier_str_mv Divan, Ralu; Rosenthal, Dan; Ogando, Karim; Ocola, Leonidas E.; Rosenmann, Daniel; et al.; Metal-assisted etching of silicon molds for electroforming; A V S Amer Inst Physics; Journal Of Vacuum Science & Technology B; 31; 6; 11-2013; 1-7
0734-211X
1071-1023
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1116/1.4821651
info:eu-repo/semantics/altIdentifier/url/https://avs.scitation.org/doi/10.1116/1.4821651
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv A V S Amer Inst Physics
publisher.none.fl_str_mv A V S Amer Inst Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846082977471135744
score 13.22299

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