Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells
- Autores
- Rath, J.K.; Rubinelli, Francisco Alberto; Schropp, R.E.I.
- Año de publicación
- 2000
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The electrical transport taking place in the μc-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO2 plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic μc-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n)μc-Si/oxide/(p)μc-Si and (b) (n)μc-Si/(i)μc-Si/(p)μc-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) μc-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this thickness provides a more controlled way of achieving greater efficiencies in a-Si:H/a-Si:H tandem solar cells.
Fil: Rath, J.K.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Schropp, R.E.I.. Utrecht University; Países Bajos - Materia
-
Tandem Solar Cells
Recombination Junctions
Electrical Transport
Efficiency - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
.jpg)
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/27788
Ver los metadatos del registro completo
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Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem CellsRath, J.K.Rubinelli, Francisco AlbertoSchropp, R.E.I.Tandem Solar CellsRecombination JunctionsElectrical TransportEfficiencyhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The electrical transport taking place in the μc-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO2 plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic μc-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n)μc-Si/oxide/(p)μc-Si and (b) (n)μc-Si/(i)μc-Si/(p)μc-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) μc-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this thickness provides a more controlled way of achieving greater efficiencies in a-Si:H/a-Si:H tandem solar cells.Fil: Rath, J.K.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Schropp, R.E.I.. Utrecht University; Países BajosElsevier Science2000-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27788Rath, J.K.; Rubinelli, Francisco Alberto; Schropp, R.E.I.; Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells; Elsevier Science; Journal of Non-crystalline Solids; 266; 5-2000; 1129-11330022-3093CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/S0022-3093(99)00916-3info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:03:36Zoai:ri.conicet.gov.ar:11336/27788instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:03:36.6CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
| dc.title.none.fl_str_mv |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| title |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| spellingShingle |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells Rath, J.K. Tandem Solar Cells Recombination Junctions Electrical Transport Efficiency |
| title_short |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| title_full |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| title_fullStr |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| title_full_unstemmed |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| title_sort |
Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells |
| dc.creator.none.fl_str_mv |
Rath, J.K. Rubinelli, Francisco Alberto Schropp, R.E.I. |
| author |
Rath, J.K. |
| author_facet |
Rath, J.K. Rubinelli, Francisco Alberto Schropp, R.E.I. |
| author_role |
author |
| author2 |
Rubinelli, Francisco Alberto Schropp, R.E.I. |
| author2_role |
author author |
| dc.subject.none.fl_str_mv |
Tandem Solar Cells Recombination Junctions Electrical Transport Efficiency |
| topic |
Tandem Solar Cells Recombination Junctions Electrical Transport Efficiency |
| purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
| dc.description.none.fl_txt_mv |
The electrical transport taking place in the μc-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO2 plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic μc-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n)μc-Si/oxide/(p)μc-Si and (b) (n)μc-Si/(i)μc-Si/(p)μc-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) μc-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this thickness provides a more controlled way of achieving greater efficiencies in a-Si:H/a-Si:H tandem solar cells. Fil: Rath, J.K.. Utrecht University; Países Bajos Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Schropp, R.E.I.. Utrecht University; Países Bajos |
| description |
The electrical transport taking place in the μc-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO2 plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic μc-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n)μc-Si/oxide/(p)μc-Si and (b) (n)μc-Si/(i)μc-Si/(p)μc-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) μc-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel junction. The optimisation of this thickness provides a more controlled way of achieving greater efficiencies in a-Si:H/a-Si:H tandem solar cells. |
| publishDate |
2000 |
| dc.date.none.fl_str_mv |
2000-05 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
| format |
article |
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publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/27788 Rath, J.K.; Rubinelli, Francisco Alberto; Schropp, R.E.I.; Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells; Elsevier Science; Journal of Non-crystalline Solids; 266; 5-2000; 1129-1133 0022-3093 CONICET Digital CONICET |
| url |
http://hdl.handle.net/11336/27788 |
| identifier_str_mv |
Rath, J.K.; Rubinelli, Francisco Alberto; Schropp, R.E.I.; Effect of Oxide Treatment at the Mycrocrystalline Tunnel Junction of a-Si:H/a-Si:H Tandem Cells; Elsevier Science; Journal of Non-crystalline Solids; 266; 5-2000; 1129-1133 0022-3093 CONICET Digital CONICET |
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eng |
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eng |
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info:eu-repo/semantics/altIdentifier/doi/10.1016/S0022-3093(99)00916-3 |
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Elsevier Science |
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Elsevier Science |
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