a-Si:H transport parameters from experiments based on photoconductivity

Autores
Longeaud, C.; Schmidt, Javier Alejandro
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.
Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Photoconductivity
Density of States
Hydrogenated Amorphous Silicon
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/76402
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/76402
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling a-Si:H transport parameters from experiments based on photoconductivityLongeaud, C.Schmidt, Javier AlejandroPhotoconductivityDensity of StatesHydrogenated Amorphous Siliconhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1https://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science2012-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/76402Longeaud, C.; Schmidt, Javier Alejandro; a-Si:H transport parameters from experiments based on photoconductivity; Elsevier Science; Journal of Non-crystalline Solids; 358; 17; 9-2012; 2052-20560022-3093CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2011.11.018info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:51:39Zoai:ri.conicet.gov.ar:11336/76402instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:51:39.728CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv a-Si:H transport parameters from experiments based on photoconductivity
title a-Si:H transport parameters from experiments based on photoconductivity
spellingShingle a-Si:H transport parameters from experiments based on photoconductivity
Longeaud, C.
Photoconductivity
Density of States
Hydrogenated Amorphous Silicon
title_short a-Si:H transport parameters from experiments based on photoconductivity
title_full a-Si:H transport parameters from experiments based on photoconductivity
title_fullStr a-Si:H transport parameters from experiments based on photoconductivity
title_full_unstemmed a-Si:H transport parameters from experiments based on photoconductivity
title_sort a-Si:H transport parameters from experiments based on photoconductivity
dc.creator.none.fl_str_mv Longeaud, C.
Schmidt, Javier Alejandro
author Longeaud, C.
author_facet Longeaud, C.
Schmidt, Javier Alejandro
author_role author
author2 Schmidt, Javier Alejandro
author2_role author
dc.subject.none.fl_str_mv Photoconductivity
Density of States
Hydrogenated Amorphous Silicon
topic Photoconductivity
Density of States
Hydrogenated Amorphous Silicon
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.
Fil: Longeaud, C.. Laboratoire Génie Électrique Et Électronique de Paris;
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.
publishDate 2012
dc.date.none.fl_str_mv 2012-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/76402
Longeaud, C.; Schmidt, Javier Alejandro; a-Si:H transport parameters from experiments based on photoconductivity; Elsevier Science; Journal of Non-crystalline Solids; 358; 17; 9-2012; 2052-2056
0022-3093
CONICET Digital
CONICET
url http://hdl.handle.net/11336/76402
identifier_str_mv Longeaud, C.; Schmidt, Javier Alejandro; a-Si:H transport parameters from experiments based on photoconductivity; Elsevier Science; Journal of Non-crystalline Solids; 358; 17; 9-2012; 2052-2056
0022-3093
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2011.11.018
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613586851201024
score 13.070432

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