Transport in tunnelling recombination junctions: a combined computer simulation study

Autores
Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto
Año de publicación
2004
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.
Fil: Vukadinovic, M.. University of Ljubljana; Eslovenia
Fil: Smole, F.. University of Ljubljana; Eslovenia
Fil: Topič, M.. University of Ljubljana; Eslovenia
Fil: Schropp, R. E. .. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Tandem Solar Cells
Recombination Junctions
Modelling
Electrical Transport
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/27246
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/27246
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Transport in tunnelling recombination junctions: a combined computer simulation studyVukadinovic, M.Smole, F.Topič, M.Schropp, R. E. .Rubinelli, Francisco AlbertoTandem Solar CellsRecombination JunctionsModellingElectrical Transporthttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.Fil: Vukadinovic, M.. University of Ljubljana; EsloveniaFil: Smole, F.. University of Ljubljana; EsloveniaFil: Topič, M.. University of Ljubljana; EsloveniaFil: Schropp, R. E. .. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaAmerican Institute of Physics2004-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27246Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-72990021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.1811375info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.1811375info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:27:23Zoai:ri.conicet.gov.ar:11336/27246instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:27:23.992CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Transport in tunnelling recombination junctions: a combined computer simulation study
title Transport in tunnelling recombination junctions: a combined computer simulation study
spellingShingle Transport in tunnelling recombination junctions: a combined computer simulation study
Vukadinovic, M.
Tandem Solar Cells
Recombination Junctions
Modelling
Electrical Transport
title_short Transport in tunnelling recombination junctions: a combined computer simulation study
title_full Transport in tunnelling recombination junctions: a combined computer simulation study
title_fullStr Transport in tunnelling recombination junctions: a combined computer simulation study
title_full_unstemmed Transport in tunnelling recombination junctions: a combined computer simulation study
title_sort Transport in tunnelling recombination junctions: a combined computer simulation study
dc.creator.none.fl_str_mv Vukadinovic, M.
Smole, F.
Topič, M.
Schropp, R. E. .
Rubinelli, Francisco Alberto
author Vukadinovic, M.
author_facet Vukadinovic, M.
Smole, F.
Topič, M.
Schropp, R. E. .
Rubinelli, Francisco Alberto
author_role author
author2 Smole, F.
Topič, M.
Schropp, R. E. .
Rubinelli, Francisco Alberto
author2_role author
author
author
author
dc.subject.none.fl_str_mv Tandem Solar Cells
Recombination Junctions
Modelling
Electrical Transport
topic Tandem Solar Cells
Recombination Junctions
Modelling
Electrical Transport
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.
Fil: Vukadinovic, M.. University of Ljubljana; Eslovenia
Fil: Smole, F.. University of Ljubljana; Eslovenia
Fil: Topič, M.. University of Ljubljana; Eslovenia
Fil: Schropp, R. E. .. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.
publishDate 2004
dc.date.none.fl_str_mv 2004-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/27246
Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-7299
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/27246
identifier_str_mv Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-7299
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.1811375
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.1811375
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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