Transport in tunnelling recombination junctions: a combined computer simulation study
- Autores
- Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto
- Año de publicación
- 2004
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.
Fil: Vukadinovic, M.. University of Ljubljana; Eslovenia
Fil: Smole, F.. University of Ljubljana; Eslovenia
Fil: Topič, M.. University of Ljubljana; Eslovenia
Fil: Schropp, R. E. .. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina - Materia
-
Tandem Solar Cells
Recombination Junctions
Modelling
Electrical Transport - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/27246
Ver los metadatos del registro completo
id |
CONICETDig_ae268c553bad4e711e7c8554aaf6de30 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/27246 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Transport in tunnelling recombination junctions: a combined computer simulation studyVukadinovic, M.Smole, F.Topič, M.Schropp, R. E. .Rubinelli, Francisco AlbertoTandem Solar CellsRecombination JunctionsModellingElectrical Transporthttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures.Fil: Vukadinovic, M.. University of Ljubljana; EsloveniaFil: Smole, F.. University of Ljubljana; EsloveniaFil: Topič, M.. University of Ljubljana; EsloveniaFil: Schropp, R. E. .. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaAmerican Institute of Physics2004-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27246Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-72990021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.1811375info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.1811375info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:58:05Zoai:ri.conicet.gov.ar:11336/27246instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:58:05.489CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Transport in tunnelling recombination junctions: a combined computer simulation study |
title |
Transport in tunnelling recombination junctions: a combined computer simulation study |
spellingShingle |
Transport in tunnelling recombination junctions: a combined computer simulation study Vukadinovic, M. Tandem Solar Cells Recombination Junctions Modelling Electrical Transport |
title_short |
Transport in tunnelling recombination junctions: a combined computer simulation study |
title_full |
Transport in tunnelling recombination junctions: a combined computer simulation study |
title_fullStr |
Transport in tunnelling recombination junctions: a combined computer simulation study |
title_full_unstemmed |
Transport in tunnelling recombination junctions: a combined computer simulation study |
title_sort |
Transport in tunnelling recombination junctions: a combined computer simulation study |
dc.creator.none.fl_str_mv |
Vukadinovic, M. Smole, F. Topič, M. Schropp, R. E. . Rubinelli, Francisco Alberto |
author |
Vukadinovic, M. |
author_facet |
Vukadinovic, M. Smole, F. Topič, M. Schropp, R. E. . Rubinelli, Francisco Alberto |
author_role |
author |
author2 |
Smole, F. Topič, M. Schropp, R. E. . Rubinelli, Francisco Alberto |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
Tandem Solar Cells Recombination Junctions Modelling Electrical Transport |
topic |
Tandem Solar Cells Recombination Junctions Modelling Electrical Transport |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures. Fil: Vukadinovic, M.. University of Ljubljana; Eslovenia Fil: Smole, F.. University of Ljubljana; Eslovenia Fil: Topič, M.. University of Ljubljana; Eslovenia Fil: Schropp, R. E. .. Utrecht University; Países Bajos Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina |
description |
The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and D-AMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon (a-Si), amorphous silicon carbide (a-SiC), or microcrystalline silicon (µc-Si) are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill’s law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of (µc-Si) are the most promising of all examined structures. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/27246 Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-7299 0021-8979 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/27246 |
identifier_str_mv |
Vukadinovic, M.; Smole, F.; Topič, M.; Schropp, R. E. .; Rubinelli, Francisco Alberto; Transport in tunnelling recombination junctions: a combined computer simulation study; American Institute of Physics; Journal of Applied Physics; 96; 12; 9-2004; 7289-7299 0021-8979 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.1811375 info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.1811375 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844613733194661888 |
score |
13.070432 |