Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells

Autores
Sturiale, Alejandro Ernesto; Li, H.; Rath, J.; Schropp, R.; Rubinelli, Francisco Alberto
Año de publicación
2009
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si:H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si:H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.
Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Li, H.. Utrecht University; Países Bajos
Fil: Rath, J.. Utrecht University; Países Bajos
Fil: Schropp, R.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Tandem Micromorph Solar Cells
Dark Current Voltage Characteristics
Amorphous Silicon
Microcrystalline Silicon
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/17097
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/17097
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Dark Current Voltage Characteristics of Micromorph Silicon Tandem CellsSturiale, Alejandro ErnestoLi, H.Rath, J.Schropp, R.Rubinelli, Francisco AlbertoTandem Micromorph Solar CellsDark Current Voltage CharacteristicsAmorphous SiliconMicrocrystalline Siliconhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si:H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si:H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Li, H.. Utrecht University; Países BajosFil: Rath, J.. Utrecht University; Países BajosFil: Schropp, R.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaAmerican Institute Of Physics2009-05-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/17097Sturiale, Alejandro Ernesto; Li, H.; Rath, J.; Schropp, R.; Rubinelli, Francisco Alberto; Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells; American Institute Of Physics; Journal Of Applied Physics; 106; 1; 2-5-2009; 1-10; 145020021-8979enginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.3151691info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.3151691info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:20:50Zoai:ri.conicet.gov.ar:11336/17097instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:20:50.501CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
title Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
spellingShingle Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
Sturiale, Alejandro Ernesto
Tandem Micromorph Solar Cells
Dark Current Voltage Characteristics
Amorphous Silicon
Microcrystalline Silicon
title_short Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
title_full Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
title_fullStr Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
title_full_unstemmed Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
title_sort Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells
dc.creator.none.fl_str_mv Sturiale, Alejandro Ernesto
Li, H.
Rath, J.
Schropp, R.
Rubinelli, Francisco Alberto
author Sturiale, Alejandro Ernesto
author_facet Sturiale, Alejandro Ernesto
Li, H.
Rath, J.
Schropp, R.
Rubinelli, Francisco Alberto
author_role author
author2 Li, H.
Rath, J.
Schropp, R.
Rubinelli, Francisco Alberto
author2_role author
author
author
author
dc.subject.none.fl_str_mv Tandem Micromorph Solar Cells
Dark Current Voltage Characteristics
Amorphous Silicon
Microcrystalline Silicon
topic Tandem Micromorph Solar Cells
Dark Current Voltage Characteristics
Amorphous Silicon
Microcrystalline Silicon
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si:H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si:H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.
Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Li, H.. Utrecht University; Países Bajos
Fil: Rath, J.. Utrecht University; Países Bajos
Fil: Schropp, R.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description The transport mechanisms controlling the forward dark current-voltage characteristic of the silicon micromorph tandem solar cell were investigated with numerical modeling techniques. The dark current-voltage characteristics of the micromorph tandem structure at forward voltages show three regions: two with an exponential dependence and a third where the current grows more slowly with the applied voltage. In the first exponential region the current is entirely controlled by recombination through gap states of the top cell. In the second exponential region the current is controlled by the mixture of recombination through gap states of both the top and bottom cells and by free carrier diffusion along the a-Si:H intrinsic layer. In the third region the onset of the electron space charge limited current on the a-Si:H top cell can be observed along with some other mechanisms that are discussed in the paper. The high forward dark J-V curve of the tandem cell can be used as diagnosis tool to quickly inspect the efficiency of the recombination junction in recombining the electron-hole pairs generated under illumination in the top and bottom cells. The dark current at high forward voltages is highly influenced by the amount of electron-hole pairs thermally generated inside the recombination junction.
publishDate 2009
dc.date.none.fl_str_mv 2009-05-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/17097
Sturiale, Alejandro Ernesto; Li, H.; Rath, J.; Schropp, R.; Rubinelli, Francisco Alberto; Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells; American Institute Of Physics; Journal Of Applied Physics; 106; 1; 2-5-2009; 1-10; 14502
0021-8979
url http://hdl.handle.net/11336/17097
identifier_str_mv Sturiale, Alejandro Ernesto; Li, H.; Rath, J.; Schropp, R.; Rubinelli, Francisco Alberto; Dark Current Voltage Characteristics of Micromorph Silicon Tandem Cells; American Institute Of Physics; Journal Of Applied Physics; 106; 1; 2-5-2009; 1-10; 14502
0021-8979
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3151691
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.3151691
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute Of Physics
publisher.none.fl_str_mv American Institute Of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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