Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices

Autores
Sturiale, Alejandro Ernesto; Rubinelli, Francisco Alberto
Año de publicación
2008
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In the scientific literature the density of states of hydrogenated amorphous silicon has been assumed to be either uniform or spatially variable inside the intrinsic layer of p-i-n solar cells. The dependence of the dark current voltage characteristics of amorphous silicon based solar cells with respect to the intrinsic layer thickness and to the mobility gap of a thin interfacial layer grown at the p/i interface is explored with numerical techniques. Our results indicate that the reported experimental trends can be adequately explained with the defect pool model and not by assuming an uniform density of states in the intrinsic layer.
Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Defect Pool
Amorphous Silicon
Solar Cells
Dark Current Voltage Characteristics
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/19802
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/19802
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devicesSturiale, Alejandro ErnestoRubinelli, Francisco AlbertoDefect PoolAmorphous SiliconSolar CellsDark Current Voltage Characteristicshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In the scientific literature the density of states of hydrogenated amorphous silicon has been assumed to be either uniform or spatially variable inside the intrinsic layer of p-i-n solar cells. The dependence of the dark current voltage characteristics of amorphous silicon based solar cells with respect to the intrinsic layer thickness and to the mobility gap of a thin interfacial layer grown at the p/i interface is explored with numerical techniques. Our results indicate that the reported experimental trends can be adequately explained with the defect pool model and not by assuming an uniform density of states in the intrinsic layer.Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science Sa2008-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/19802Sturiale, Alejandro Ernesto; Rubinelli, Francisco Alberto; Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices; Elsevier Science Sa; Thin Solid Films; 516; 21; 4-2008; 7708-77140040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2008.04.002info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609008003544?via%3Dihubinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:47:25Zoai:ri.conicet.gov.ar:11336/19802instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:47:25.667CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
title Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
spellingShingle Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
Sturiale, Alejandro Ernesto
Defect Pool
Amorphous Silicon
Solar Cells
Dark Current Voltage Characteristics
title_short Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
title_full Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
title_fullStr Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
title_full_unstemmed Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
title_sort Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices
dc.creator.none.fl_str_mv Sturiale, Alejandro Ernesto
Rubinelli, Francisco Alberto
author Sturiale, Alejandro Ernesto
author_facet Sturiale, Alejandro Ernesto
Rubinelli, Francisco Alberto
author_role author
author2 Rubinelli, Francisco Alberto
author2_role author
dc.subject.none.fl_str_mv Defect Pool
Amorphous Silicon
Solar Cells
Dark Current Voltage Characteristics
topic Defect Pool
Amorphous Silicon
Solar Cells
Dark Current Voltage Characteristics
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In the scientific literature the density of states of hydrogenated amorphous silicon has been assumed to be either uniform or spatially variable inside the intrinsic layer of p-i-n solar cells. The dependence of the dark current voltage characteristics of amorphous silicon based solar cells with respect to the intrinsic layer thickness and to the mobility gap of a thin interfacial layer grown at the p/i interface is explored with numerical techniques. Our results indicate that the reported experimental trends can be adequately explained with the defect pool model and not by assuming an uniform density of states in the intrinsic layer.
Fil: Sturiale, Alejandro Ernesto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description In the scientific literature the density of states of hydrogenated amorphous silicon has been assumed to be either uniform or spatially variable inside the intrinsic layer of p-i-n solar cells. The dependence of the dark current voltage characteristics of amorphous silicon based solar cells with respect to the intrinsic layer thickness and to the mobility gap of a thin interfacial layer grown at the p/i interface is explored with numerical techniques. Our results indicate that the reported experimental trends can be adequately explained with the defect pool model and not by assuming an uniform density of states in the intrinsic layer.
publishDate 2008
dc.date.none.fl_str_mv 2008-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/19802
Sturiale, Alejandro Ernesto; Rubinelli, Francisco Alberto; Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices; Elsevier Science Sa; Thin Solid Films; 516; 21; 4-2008; 7708-7714
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/19802
identifier_str_mv Sturiale, Alejandro Ernesto; Rubinelli, Francisco Alberto; Evidences of the Defect Pool Model in the dark J-V characteristics of hydrogenated amorphous silicon based p-i-n devices; Elsevier Science Sa; Thin Solid Films; 516; 21; 4-2008; 7708-7714
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2008.04.002
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0040609008003544?via%3Dihub
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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