Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices

Autores
Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón
Año de publicación
2015
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
Materia
Reverse Dark Current Voltage Characteristics
Solar Cells
Optical Detectors
Thin Film Devices
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/10047
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/10047
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devicesRubinelli, Francisco Albertode Greef, Marcelo GastónReverse Dark Current Voltage CharacteristicsSolar CellsOptical DetectorsThin Film Deviceshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaFil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaWiley Vch Verlag2015-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10047Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-21410370-1972enginfo:eu-repo/semantics/altIdentifier/doi/10.1002/pssb.201552141info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552141/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:56:29Zoai:ri.conicet.gov.ar:11336/10047instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:56:29.359CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
title Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
spellingShingle Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
Rubinelli, Francisco Alberto
Reverse Dark Current Voltage Characteristics
Solar Cells
Optical Detectors
Thin Film Devices
title_short Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
title_full Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
title_fullStr Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
title_full_unstemmed Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
title_sort Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
dc.creator.none.fl_str_mv Rubinelli, Francisco Alberto
de Greef, Marcelo Gastón
author Rubinelli, Francisco Alberto
author_facet Rubinelli, Francisco Alberto
de Greef, Marcelo Gastón
author_role author
author2 de Greef, Marcelo Gastón
author2_role author
dc.subject.none.fl_str_mv Reverse Dark Current Voltage Characteristics
Solar Cells
Optical Detectors
Thin Film Devices
topic Reverse Dark Current Voltage Characteristics
Solar Cells
Optical Detectors
Thin Film Devices
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
description An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.
publishDate 2015
dc.date.none.fl_str_mv 2015-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/10047
Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-2141
0370-1972
url http://hdl.handle.net/11336/10047
identifier_str_mv Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-2141
0370-1972
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1002/pssb.201552141
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552141/abstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley Vch Verlag
publisher.none.fl_str_mv Wiley Vch Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.22299

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