Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices
- Autores
- Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón
- Año de publicación
- 2015
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina - Materia
-
Reverse Dark Current Voltage Characteristics
Solar Cells
Optical Detectors
Thin Film Devices - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/10047
Ver los metadatos del registro completo
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Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devicesRubinelli, Francisco Albertode Greef, Marcelo GastónReverse Dark Current Voltage CharacteristicsSolar CellsOptical DetectorsThin Film Deviceshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA.Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaFil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaWiley Vch Verlag2015-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10047Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-21410370-1972enginfo:eu-repo/semantics/altIdentifier/doi/10.1002/pssb.201552141info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552141/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:00:34Zoai:ri.conicet.gov.ar:11336/10047instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:00:35.032CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
title |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
spellingShingle |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices Rubinelli, Francisco Alberto Reverse Dark Current Voltage Characteristics Solar Cells Optical Detectors Thin Film Devices |
title_short |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
title_full |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
title_fullStr |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
title_full_unstemmed |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
title_sort |
Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices |
dc.creator.none.fl_str_mv |
Rubinelli, Francisco Alberto de Greef, Marcelo Gastón |
author |
Rubinelli, Francisco Alberto |
author_facet |
Rubinelli, Francisco Alberto de Greef, Marcelo Gastón |
author_role |
author |
author2 |
de Greef, Marcelo Gastón |
author2_role |
author |
dc.subject.none.fl_str_mv |
Reverse Dark Current Voltage Characteristics Solar Cells Optical Detectors Thin Film Devices |
topic |
Reverse Dark Current Voltage Characteristics Solar Cells Optical Detectors Thin Film Devices |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA. Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); Argentina |
description |
An algorithm that simplifies the evaluation of the reverse dark current–voltage (J–V) characteristic of semiconductor thin film devices is presented. This algorithm, recognized with the symbols “0KRDA”, is an approximation of the SRH formalism that can be used when the dangling bond density is modeled with either the UniformDensityModel orwith theDefectPoolModel. The 0KRDA is designed to replace the 0K-Simmons–Taylor approximation (0KSTA) in reversed biased junctions operating under dark conditions. The dependence of the current density J with respect to the applied voltage V predicted with SRH formalism is well replicated by the 0KRDA. The small differences obtained in the calculated reverse dark currents can be removed by neglecting the contribution of gap states with energies closer than kT/5 to the intrinsic trap level. The transport physic controlling the shape of reverse dark J–V curves of thin film devices can be more easily visualized with the 0KRDA. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/10047 Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-2141 0370-1972 |
url |
http://hdl.handle.net/11336/10047 |
identifier_str_mv |
Rubinelli, Francisco Alberto; de Greef, Marcelo Gastón; Simplified method for the evaluation of the reverse dark current-voltage characteristic of thin film devices; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 9; 9-2015; 2129-2141 0370-1972 |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1002/pssb.201552141 info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201552141/abstract |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Wiley Vch Verlag |
publisher.none.fl_str_mv |
Wiley Vch Verlag |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613788455665664 |
score |
13.070432 |