Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation

Autores
de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Van Swaaij, Rene. Delft University of Technology; Países Bajos
Materia
CURRENT-VOLTAGE CURVES
DEVICE MODELING
OPTICAL DETECTORS
SIMMONS-TAYLOR
SOLAR CELLS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/1027

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network_name_str CONICET Digital (CONICET)
spelling Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximationde Greef, Marcelo GastónRubinelli, Francisco AlbertoVan Swaaij, ReneCURRENT-VOLTAGE CURVESDEVICE MODELINGOPTICAL DETECTORSSIMMONS-TAYLORSOLAR CELLShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Van Swaaij, Rene. Delft University of Technology; Países BajosElsevier Science SA2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/1027de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-2340040-6090enginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2013.05.169info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:40:45Zoai:ri.conicet.gov.ar:11336/1027instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:40:45.594CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
title Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
spellingShingle Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
de Greef, Marcelo Gastón
CURRENT-VOLTAGE CURVES
DEVICE MODELING
OPTICAL DETECTORS
SIMMONS-TAYLOR
SOLAR CELLS
title_short Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
title_full Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
title_fullStr Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
title_full_unstemmed Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
title_sort Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
dc.creator.none.fl_str_mv de Greef, Marcelo Gastón
Rubinelli, Francisco Alberto
Van Swaaij, Rene
author de Greef, Marcelo Gastón
author_facet de Greef, Marcelo Gastón
Rubinelli, Francisco Alberto
Van Swaaij, Rene
author_role author
author2 Rubinelli, Francisco Alberto
Van Swaaij, Rene
author2_role author
author
dc.subject.none.fl_str_mv CURRENT-VOLTAGE CURVES
DEVICE MODELING
OPTICAL DETECTORS
SIMMONS-TAYLOR
SOLAR CELLS
topic CURRENT-VOLTAGE CURVES
DEVICE MODELING
OPTICAL DETECTORS
SIMMONS-TAYLOR
SOLAR CELLS
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Van Swaaij, Rene. Delft University of Technology; Países Bajos
description The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.
publishDate 2013
dc.date.none.fl_str_mv 2013-08
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/1027
de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-234
0040-6090
url http://hdl.handle.net/11336/1027
identifier_str_mv de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-234
0040-6090
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2013.05.169
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science SA
publisher.none.fl_str_mv Elsevier Science SA
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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