Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation
- Autores
- de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene
- Año de publicación
- 2013
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.
Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Van Swaaij, Rene. Delft University of Technology; Países Bajos - Materia
-
CURRENT-VOLTAGE CURVES
DEVICE MODELING
OPTICAL DETECTORS
SIMMONS-TAYLOR
SOLAR CELLS - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/1027
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Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximationde Greef, Marcelo GastónRubinelli, Francisco AlbertoVan Swaaij, ReneCURRENT-VOLTAGE CURVESDEVICE MODELINGOPTICAL DETECTORSSIMMONS-TAYLORSOLAR CELLShttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions.Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Van Swaaij, Rene. Delft University of Technology; Países BajosElsevier Science SA2013-08info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/1027de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-2340040-6090enginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2013.05.169info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:40:45Zoai:ri.conicet.gov.ar:11336/1027instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:40:45.594CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
title |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
spellingShingle |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation de Greef, Marcelo Gastón CURRENT-VOLTAGE CURVES DEVICE MODELING OPTICAL DETECTORS SIMMONS-TAYLOR SOLAR CELLS |
title_short |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
title_full |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
title_fullStr |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
title_full_unstemmed |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
title_sort |
Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation |
dc.creator.none.fl_str_mv |
de Greef, Marcelo Gastón Rubinelli, Francisco Alberto Van Swaaij, Rene |
author |
de Greef, Marcelo Gastón |
author_facet |
de Greef, Marcelo Gastón Rubinelli, Francisco Alberto Van Swaaij, Rene |
author_role |
author |
author2 |
Rubinelli, Francisco Alberto Van Swaaij, Rene |
author2_role |
author author |
dc.subject.none.fl_str_mv |
CURRENT-VOLTAGE CURVES DEVICE MODELING OPTICAL DETECTORS SIMMONS-TAYLOR SOLAR CELLS |
topic |
CURRENT-VOLTAGE CURVES DEVICE MODELING OPTICAL DETECTORS SIMMONS-TAYLOR SOLAR CELLS |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions. Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Van Swaaij, Rene. Delft University of Technology; Países Bajos |
description |
The performance of amorphous and microcrystalline silicon based electronic devices is highly dependent on the density of states present in the band gap. The density of states in these materials contains two exponentially decreasing tails and a high number of deep states. Charge trapping and recombination of electron-hole pairs through gap states are usually described by the Schockley-Read-Hall (SRH) formalism. The equations derived in the SRH formalism can be highly simplified by using the Simmons-Taylor's algorithms, especially the one so called 0K approximation, which allows a quasi-analytical derivation of the current-voltage characteristics. Although the validity of these algorithms were discussed in the literature on semiconductor materials, there is no a systematic study where these algorithms were included in a computer code that numerically solves the governing semiconductor device equations in order to compare the characteristic curves predicted by these simplifications with the ones obtained with the SRH formalism. This paper is an attempt to fill this void. The approximations of Simmon-Taylor were implemented in our code D-AMPS and the current-voltage and spectral responses curves were evaluated under different conditions: with and without bias light, at forward and reverse bias voltages, at different temperatures, for various intrinsic layer thicknesses and for different key electrical parameters. To simplify the discussion we have assumed an uniform density of states along the intrinsic layer. Our results indicate that the Simmon-Taylor approximation is acceptable when the device is working under illumination. Under dark conditions the approximation is also satisfactory when the device is forward biased but slightly overestimates the dark current when the device is reverse forward. Although the 0K approximation leads us to unacceptable results when the device is reversed biased and operates under dark conditions it can also be used in device modeling taking some precautions. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013-08 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/1027 de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-234 0040-6090 |
url |
http://hdl.handle.net/11336/1027 |
identifier_str_mv |
de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Van Swaaij, Rene; Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation; Elsevier Science SA; Thin Solid Films; 540; 8-2013; 227-234 0040-6090 |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.tsf.2013.05.169 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science SA |
publisher.none.fl_str_mv |
Elsevier Science SA |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613289577807872 |
score |
13.070432 |