Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems

Autores
Oggier, German Gustavo; Gomez Jimenez, Roderick A.; Zhao, Yue; Balda, Juan Carlos
Año de publicación
2020
Idioma
inglés
Tipo de recurso
documento de conferencia
Estado
versión publicada
Descripción
This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the nonlinearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results.
Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
Fil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados Unidos
Fil: Zhao, Yue. University of Arkansas; Estados Unidos
Fil: Balda, Juan Carlos. University of Arkansas; Estados Unidos
IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020)
Croacia
Institute of Electrical and Electronics Engineers
Materia
SIC MOSFET
SWITCHING ANALYSIS
SWITCHING LOSSES
ANALYTICAL MODEL
CHARACTERIZATION.
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/219874
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/219874
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution SystemsOggier, German GustavoGomez Jimenez, Roderick A.Zhao, YueBalda, Juan CarlosSIC MOSFETSWITCHING ANALYSISSWITCHING LOSSESANALYTICAL MODELCHARACTERIZATION.https://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the nonlinearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results.Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; ArgentinaFil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados UnidosFil: Zhao, Yue. University of Arkansas; Estados UnidosFil: Balda, Juan Carlos. University of Arkansas; Estados UnidosIEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020)CroaciaInstitute of Electrical and Electronics EngineersInstitute of Electrical and Electronics Engineers2020info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectCongresoBookhttp://purl.org/coar/resource_type/c_5794info:ar-repo/semantics/documentoDeConferenciaapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/219874Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems; IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020); Croacia; 2020; 583-590978-1-7281-6990-3CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/9244411info:eu-repo/semantics/altIdentifier/doi/10.1109/PEDG48541.2020.9244411Internacionalinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:50:40Zoai:ri.conicet.gov.ar:11336/219874instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:50:40.903CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
title Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
spellingShingle Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
Oggier, German Gustavo
SIC MOSFET
SWITCHING ANALYSIS
SWITCHING LOSSES
ANALYTICAL MODEL
CHARACTERIZATION.
title_short Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
title_full Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
title_fullStr Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
title_full_unstemmed Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
title_sort Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems
dc.creator.none.fl_str_mv Oggier, German Gustavo
Gomez Jimenez, Roderick A.
Zhao, Yue
Balda, Juan Carlos
author Oggier, German Gustavo
author_facet Oggier, German Gustavo
Gomez Jimenez, Roderick A.
Zhao, Yue
Balda, Juan Carlos
author_role author
author2 Gomez Jimenez, Roderick A.
Zhao, Yue
Balda, Juan Carlos
author2_role author
author
author
dc.subject.none.fl_str_mv SIC MOSFET
SWITCHING ANALYSIS
SWITCHING LOSSES
ANALYTICAL MODEL
CHARACTERIZATION.
topic SIC MOSFET
SWITCHING ANALYSIS
SWITCHING LOSSES
ANALYTICAL MODEL
CHARACTERIZATION.
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the nonlinearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results.
Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
Fil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados Unidos
Fil: Zhao, Yue. University of Arkansas; Estados Unidos
Fil: Balda, Juan Carlos. University of Arkansas; Estados Unidos
IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020)
Croacia
Institute of Electrical and Electronics Engineers
description This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the nonlinearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results.
publishDate 2020
dc.date.none.fl_str_mv 2020
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
Congreso
Book
http://purl.org/coar/resource_type/c_5794
info:ar-repo/semantics/documentoDeConferencia
status_str publishedVersion
format conferenceObject
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/219874
Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems; IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020); Croacia; 2020; 583-590
978-1-7281-6990-3
CONICET Digital
CONICET
url http://hdl.handle.net/11336/219874
identifier_str_mv Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems; IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG 2020); Croacia; 2020; 583-590
978-1-7281-6990-3
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/9244411
info:eu-repo/semantics/altIdentifier/doi/10.1109/PEDG48541.2020.9244411
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.coverage.none.fl_str_mv Internacional
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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