Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

Autores
Patterson, Germán Agustín; Sune, J.; Miranda, E.
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.
Fil: Patterson, Germán Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universitat Autònoma de Barcelona; España. Instituto Tecnológico de Buenos Aires; Argentina
Fil: Sune, J.. Universitat Autònoma de Barcelona; España
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
Materia
MEMRISTOR
RESISTIVE SWITCHING
SPICE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/72101
Acceder
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit ApplicationsPatterson, Germán AgustínSune, J.Miranda, E.MEMRISTORRESISTIVE SWITCHINGSPICEhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.Fil: Patterson, Germán Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universitat Autònoma de Barcelona; España. Instituto Tecnológico de Buenos Aires; ArgentinaFil: Sune, J.. Universitat Autònoma de Barcelona; EspañaFil: Miranda, E.. Universitat Autònoma de Barcelona; EspañaInstitute of Electrical and Electronics Engineers2017-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/72101Patterson, Germán Agustín; Sune, J.; Miranda, E.; Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications; Institute of Electrical and Electronics Engineers; Ieee Transactions On Computer-aided Design Of Integrated Circuits And Systems; 36; 12; 12-2017; 2044-20510278-0070CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1109/TCAD.2017.2756561info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8049320/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:52:32Zoai:ri.conicet.gov.ar:11336/72101instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:52:32.431CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
title Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
spellingShingle Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
Patterson, Germán Agustín
MEMRISTOR
RESISTIVE SWITCHING
SPICE
title_short Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
title_full Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
title_fullStr Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
title_full_unstemmed Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
title_sort Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications
dc.creator.none.fl_str_mv Patterson, Germán Agustín
Sune, J.
Miranda, E.
author Patterson, Germán Agustín
author_facet Patterson, Germán Agustín
Sune, J.
Miranda, E.
author_role author
author2 Sune, J.
Miranda, E.
author2_role author
author
dc.subject.none.fl_str_mv MEMRISTOR
RESISTIVE SWITCHING
SPICE
topic MEMRISTOR
RESISTIVE SWITCHING
SPICE
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.
Fil: Patterson, Germán Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universitat Autònoma de Barcelona; España. Instituto Tecnológico de Buenos Aires; Argentina
Fil: Sune, J.. Universitat Autònoma de Barcelona; España
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
description Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment.
publishDate 2017
dc.date.none.fl_str_mv 2017-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/72101
Patterson, Germán Agustín; Sune, J.; Miranda, E.; Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications; Institute of Electrical and Electronics Engineers; Ieee Transactions On Computer-aided Design Of Integrated Circuits And Systems; 36; 12; 12-2017; 2044-2051
0278-0070
CONICET Digital
CONICET
url http://hdl.handle.net/11336/72101
identifier_str_mv Patterson, Germán Agustín; Sune, J.; Miranda, E.; Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications; Institute of Electrical and Electronics Engineers; Ieee Transactions On Computer-aided Design Of Integrated Circuits And Systems; 36; 12; 12-2017; 2044-2051
0278-0070
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/TCAD.2017.2756561
info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/8049320/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269165248839680
score 13.13397

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