Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

Autores
Carra, Martin Javier; Tacca, Hernán Emilio; Lipovetzky, José
Año de publicación
2021
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.
Fil: Carra, Martin Javier. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Electrónica; Argentina
Fil: Tacca, Hernán Emilio. Universidad de Buenos Aires; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; Argentina
Fil: Lipovetzky, José. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Materia
GAN
GATE DRIVER
PERFORMANCE
SIC
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/181951
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switchCarra, Martin JavierTacca, Hernán EmilioLipovetzky, JoséGANGATE DRIVERPERFORMANCESIChttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.Fil: Carra, Martin Javier. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Electrónica; ArgentinaFil: Tacca, Hernán Emilio. Universidad de Buenos Aires; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; ArgentinaFil: Lipovetzky, José. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaInstitute of Advanced Engineering and Science2021-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/181951Carra, Martin Javier; Tacca, Hernán Emilio; Lipovetzky, José; Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch; Institute of Advanced Engineering and Science; International Journal of Power Electronics and Drive Systems; 12; 3; 9-2021; 1293-13032088-86942722-256XCONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.11591/ijpeds.v12.i3.pp1293-1303info:eu-repo/semantics/altIdentifier/url/https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/20592info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:57:37Zoai:ri.conicet.gov.ar:11336/181951instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:57:37.286CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
title Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
spellingShingle Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
Carra, Martin Javier
GAN
GATE DRIVER
PERFORMANCE
SIC
title_short Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
title_full Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
title_fullStr Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
title_full_unstemmed Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
title_sort Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch
dc.creator.none.fl_str_mv Carra, Martin Javier
Tacca, Hernán Emilio
Lipovetzky, José
author Carra, Martin Javier
author_facet Carra, Martin Javier
Tacca, Hernán Emilio
Lipovetzky, José
author_role author
author2 Tacca, Hernán Emilio
Lipovetzky, José
author2_role author
author
dc.subject.none.fl_str_mv GAN
GATE DRIVER
PERFORMANCE
SIC
topic GAN
GATE DRIVER
PERFORMANCE
SIC
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.
Fil: Carra, Martin Javier. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Electrónica; Argentina
Fil: Tacca, Hernán Emilio. Universidad de Buenos Aires; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro | Universidad Nacional de Cuyo. Instituto Balseiro. Archivo Histórico del Centro Atómico Bariloche e Instituto Balseiro; Argentina
Fil: Lipovetzky, José. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche | Comisión Nacional de Energía Atómica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología. Unidad Ejecutora Instituto de Nanociencia y Nanotecnología - Nodo Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
description Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.
publishDate 2021
dc.date.none.fl_str_mv 2021-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/181951
Carra, Martin Javier; Tacca, Hernán Emilio; Lipovetzky, José; Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch; Institute of Advanced Engineering and Science; International Journal of Power Electronics and Drive Systems; 12; 3; 9-2021; 1293-1303
2088-8694
2722-256X
CONICET Digital
CONICET
url http://hdl.handle.net/11336/181951
identifier_str_mv Carra, Martin Javier; Tacca, Hernán Emilio; Lipovetzky, José; Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch; Institute of Advanced Engineering and Science; International Journal of Power Electronics and Drive Systems; 12; 3; 9-2021; 1293-1303
2088-8694
2722-256X
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.11591/ijpeds.v12.i3.pp1293-1303
info:eu-repo/semantics/altIdentifier/url/https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/20592
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Advanced Engineering and Science
publisher.none.fl_str_mv Institute of Advanced Engineering and Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844613722349240320
score 13.070432

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