Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications

Autores
Gomez Jimenez, Roderick A.; Porras Fernandez, David; Oggier, German Gustavo; Balda, Juan Carlos; Zhao, Yue
Año de publicación
2023
Idioma
inglés
Tipo de recurso
documento de conferencia
Estado
versión publicada
Descripción
The advancement of high-blocking capacity silicon carbide (SiC) power modules enables the development of next-generation highly efficient and highly power-dense conversion units for medium voltage applications without implementing complex multilevel topologies. This paper presents the design and testing of a 150-kW medium-voltage (MV) three-phase dual active bridge (DAB) using 10-kV Wolfspeed SiC MOSFETs for MV AC and DC grid applications. The DAB is designed for an MV of 5 kVdc and a low voltage of 400 Vdc. A high efficiency, low parasitic capacitance 10-kHz three-limb three-phase transformer with integrated leakage inductance for rated power transfer is used to provide galvanic isolation. The proposed prototype was experimentally validated up to 45 kW with an input voltage of up to 4 kV. Experimental voltage and current waveforms are provided for each operating condition.
Fil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados Unidos
Fil: Porras Fernandez, David. University of Arkansas; Estados Unidos
Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
Fil: Balda, Juan Carlos. University of Arkansas; Estados Unidos
Fil: Zhao, Yue. University of Arkansas; Estados Unidos
38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023)
Orlando
Estados Unidos
Institute of Electrical and Electronics Engineers
Materia
SILICON CARBIDE (SIC)
DUAL ACTIVE BRIDGE (DAB)
SOLID STATE TRANSFORMER
MEDIUM VOLTAGE
MEDIUM FREQUENCY TRANSFORMER
THREE PHASE CONVERTER
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/219903
Acceder
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network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid ApplicationsGomez Jimenez, Roderick A.Porras Fernandez, DavidOggier, German GustavoBalda, Juan CarlosZhao, YueSILICON CARBIDE (SIC)DUAL ACTIVE BRIDGE (DAB)SOLID STATE TRANSFORMERMEDIUM VOLTAGEMEDIUM FREQUENCY TRANSFORMERTHREE PHASE CONVERTERhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The advancement of high-blocking capacity silicon carbide (SiC) power modules enables the development of next-generation highly efficient and highly power-dense conversion units for medium voltage applications without implementing complex multilevel topologies. This paper presents the design and testing of a 150-kW medium-voltage (MV) three-phase dual active bridge (DAB) using 10-kV Wolfspeed SiC MOSFETs for MV AC and DC grid applications. The DAB is designed for an MV of 5 kVdc and a low voltage of 400 Vdc. A high efficiency, low parasitic capacitance 10-kHz three-limb three-phase transformer with integrated leakage inductance for rated power transfer is used to provide galvanic isolation. The proposed prototype was experimentally validated up to 45 kW with an input voltage of up to 4 kV. Experimental voltage and current waveforms are provided for each operating condition.Fil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados UnidosFil: Porras Fernandez, David. University of Arkansas; Estados UnidosFil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; ArgentinaFil: Balda, Juan Carlos. University of Arkansas; Estados UnidosFil: Zhao, Yue. University of Arkansas; Estados Unidos38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023)OrlandoEstados UnidosInstitute of Electrical and Electronics EngineersInstitute of Electrical and Electronics Engineers2023info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectCongresoBookhttp://purl.org/coar/resource_type/c_5794info:ar-repo/semantics/documentoDeConferenciaapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/219903Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications; 38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023); Orlando; Estados Unidos; 2023; 1-6CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/10131458info:eu-repo/semantics/altIdentifier/doi/10.1109/APEC43580.2023.10131458Internacionalinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:41:37Zoai:ri.conicet.gov.ar:11336/219903instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:41:37.53CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
title Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
spellingShingle Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
Gomez Jimenez, Roderick A.
SILICON CARBIDE (SIC)
DUAL ACTIVE BRIDGE (DAB)
SOLID STATE TRANSFORMER
MEDIUM VOLTAGE
MEDIUM FREQUENCY TRANSFORMER
THREE PHASE CONVERTER
title_short Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
title_full Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
title_fullStr Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
title_full_unstemmed Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
title_sort Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications
dc.creator.none.fl_str_mv Gomez Jimenez, Roderick A.
Porras Fernandez, David
Oggier, German Gustavo
Balda, Juan Carlos
Zhao, Yue
author Gomez Jimenez, Roderick A.
author_facet Gomez Jimenez, Roderick A.
Porras Fernandez, David
Oggier, German Gustavo
Balda, Juan Carlos
Zhao, Yue
author_role author
author2 Porras Fernandez, David
Oggier, German Gustavo
Balda, Juan Carlos
Zhao, Yue
author2_role author
author
author
author
dc.subject.none.fl_str_mv SILICON CARBIDE (SIC)
DUAL ACTIVE BRIDGE (DAB)
SOLID STATE TRANSFORMER
MEDIUM VOLTAGE
MEDIUM FREQUENCY TRANSFORMER
THREE PHASE CONVERTER
topic SILICON CARBIDE (SIC)
DUAL ACTIVE BRIDGE (DAB)
SOLID STATE TRANSFORMER
MEDIUM VOLTAGE
MEDIUM FREQUENCY TRANSFORMER
THREE PHASE CONVERTER
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv The advancement of high-blocking capacity silicon carbide (SiC) power modules enables the development of next-generation highly efficient and highly power-dense conversion units for medium voltage applications without implementing complex multilevel topologies. This paper presents the design and testing of a 150-kW medium-voltage (MV) three-phase dual active bridge (DAB) using 10-kV Wolfspeed SiC MOSFETs for MV AC and DC grid applications. The DAB is designed for an MV of 5 kVdc and a low voltage of 400 Vdc. A high efficiency, low parasitic capacitance 10-kHz three-limb three-phase transformer with integrated leakage inductance for rated power transfer is used to provide galvanic isolation. The proposed prototype was experimentally validated up to 45 kW with an input voltage of up to 4 kV. Experimental voltage and current waveforms are provided for each operating condition.
Fil: Gomez Jimenez, Roderick A.. University of Arkansas; Estados Unidos
Fil: Porras Fernandez, David. University of Arkansas; Estados Unidos
Fil: Oggier, German Gustavo. Universidad Nacional de Río Cuarto. Facultad de Ciencias Exactas Fisicoquímicas y Naturales. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados. - Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados; Argentina
Fil: Balda, Juan Carlos. University of Arkansas; Estados Unidos
Fil: Zhao, Yue. University of Arkansas; Estados Unidos
38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023)
Orlando
Estados Unidos
Institute of Electrical and Electronics Engineers
description The advancement of high-blocking capacity silicon carbide (SiC) power modules enables the development of next-generation highly efficient and highly power-dense conversion units for medium voltage applications without implementing complex multilevel topologies. This paper presents the design and testing of a 150-kW medium-voltage (MV) three-phase dual active bridge (DAB) using 10-kV Wolfspeed SiC MOSFETs for MV AC and DC grid applications. The DAB is designed for an MV of 5 kVdc and a low voltage of 400 Vdc. A high efficiency, low parasitic capacitance 10-kHz three-limb three-phase transformer with integrated leakage inductance for rated power transfer is used to provide galvanic isolation. The proposed prototype was experimentally validated up to 45 kW with an input voltage of up to 4 kV. Experimental voltage and current waveforms are provided for each operating condition.
publishDate 2023
dc.date.none.fl_str_mv 2023
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/conferenceObject
Congreso
Book
http://purl.org/coar/resource_type/c_5794
info:ar-repo/semantics/documentoDeConferencia
status_str publishedVersion
format conferenceObject
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/219903
Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications; 38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023); Orlando; Estados Unidos; 2023; 1-6
CONICET Digital
CONICET
url http://hdl.handle.net/11336/219903
identifier_str_mv Three Phase Dual Active Bridges with Integrated Series Inductance using 10-kV SiC MOSFETs for Medium Voltage Grid Applications; 38th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2023); Orlando; Estados Unidos; 2023; 1-6
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://ieeexplore.ieee.org/document/10131458
info:eu-repo/semantics/altIdentifier/doi/10.1109/APEC43580.2023.10131458
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.coverage.none.fl_str_mv Internacional
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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