Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors

Autores
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Materia
Pollycrystalline
Mott-Schottky
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/10742
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donorsSchipani, FedericoAldao, Celso ManuelPonce, Miguel AdolfoPollycrystallineMott-Schottkyhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaIop Publishing2012-11-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10742Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-4953070022-3727enginfo:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/45/49/495302info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495302info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:04:51Zoai:ri.conicet.gov.ar:11336/10742instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:04:52.133CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
title Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
spellingShingle Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
Schipani, Federico
Pollycrystalline
Mott-Schottky
title_short Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
title_full Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
title_fullStr Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
title_full_unstemmed Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
title_sort Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
dc.creator.none.fl_str_mv Schipani, Federico
Aldao, Celso Manuel
Ponce, Miguel Adolfo
author Schipani, Federico
author_facet Schipani, Federico
Aldao, Celso Manuel
Ponce, Miguel Adolfo
author_role author
author2 Aldao, Celso Manuel
Ponce, Miguel Adolfo
author2_role author
author
dc.subject.none.fl_str_mv Pollycrystalline
Mott-Schottky
topic Pollycrystalline
Mott-Schottky
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
description The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.
publishDate 2012
dc.date.none.fl_str_mv 2012-11-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/10742
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-495307
0022-3727
url http://hdl.handle.net/11336/10742
identifier_str_mv Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-495307
0022-3727
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/45/49/495302
info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495302
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Iop Publishing
publisher.none.fl_str_mv Iop Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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