Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors
- Autores
- Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo
- Año de publicación
- 2012
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina - Materia
-
Pollycrystalline
Mott-Schottky - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/10742
Ver los metadatos del registro completo
id |
CONICETDig_1d755b1eca2a7109cc494f1ff322497d |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/10742 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donorsSchipani, FedericoAldao, Celso ManuelPonce, Miguel AdolfoPollycrystallineMott-Schottkyhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis.Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaIop Publishing2012-11-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10742Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-4953070022-3727enginfo:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/45/49/495302info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495302info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:36:44Zoai:ri.conicet.gov.ar:11336/10742instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:36:45.118CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
title |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
spellingShingle |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors Schipani, Federico Pollycrystalline Mott-Schottky |
title_short |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
title_full |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
title_fullStr |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
title_full_unstemmed |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
title_sort |
Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors |
dc.creator.none.fl_str_mv |
Schipani, Federico Aldao, Celso Manuel Ponce, Miguel Adolfo |
author |
Schipani, Federico |
author_facet |
Schipani, Federico Aldao, Celso Manuel Ponce, Miguel Adolfo |
author_role |
author |
author2 |
Aldao, Celso Manuel Ponce, Miguel Adolfo |
author2_role |
author author |
dc.subject.none.fl_str_mv |
Pollycrystalline Mott-Schottky |
topic |
Pollycrystalline Mott-Schottky |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis. Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación en Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina |
description |
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors. Even though we considered strong Fermi level pinning at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on ZnO varistors corroborated the main trends of our analysis. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-11-09 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/10742 Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-495307 0022-3727 |
url |
http://hdl.handle.net/11336/10742 |
identifier_str_mv |
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors; Iop Publishing; Journal Of Physics D: Applied Physics; 45; 9-11-2012; 495302-495307 0022-3727 |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1088/0022-3727/45/49/495302 info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0022-3727/45/49/495302 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Iop Publishing |
publisher.none.fl_str_mv |
Iop Publishing |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844613154618736640 |
score |
13.070432 |