Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films

Autores
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Materia
SEMICONDUCTOR FILMS
SCHOTTKY BARRIERS
GAS SENSORS
TUNNELING
ACTIVATION ENERGIES
ATMOSPHERIC TEMPERATURE
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/10741
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor filmsSchipani, FedericoAldao, Celso ManuelPonce, Miguel AdolfoSEMICONDUCTOR FILMSSCHOTTKY BARRIERSGAS SENSORSTUNNELINGACTIVATION ENERGIESATMOSPHERIC TEMPERATUREhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaFil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; ArgentinaAmerican Institute of Physics2012-08-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10741Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films; American Institute of Physics; AIP Advances; 2; 9-8-2012; 2158-32262158-3226enginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4746417info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4746417info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:22:59Zoai:ri.conicet.gov.ar:11336/10741instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:23:00.14CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
title Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
spellingShingle Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
Schipani, Federico
SEMICONDUCTOR FILMS
SCHOTTKY BARRIERS
GAS SENSORS
TUNNELING
ACTIVATION ENERGIES
ATMOSPHERIC TEMPERATURE
title_short Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
title_full Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
title_fullStr Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
title_full_unstemmed Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
title_sort Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films
dc.creator.none.fl_str_mv Schipani, Federico
Aldao, Celso Manuel
Ponce, Miguel Adolfo
author Schipani, Federico
author_facet Schipani, Federico
Aldao, Celso Manuel
Ponce, Miguel Adolfo
author_role author
author2 Aldao, Celso Manuel
Ponce, Miguel Adolfo
author2_role author
author
dc.subject.none.fl_str_mv SEMICONDUCTOR FILMS
SCHOTTKY BARRIERS
GAS SENSORS
TUNNELING
ACTIVATION ENERGIES
ATMOSPHERIC TEMPERATURE
topic SEMICONDUCTOR FILMS
SCHOTTKY BARRIERS
GAS SENSORS
TUNNELING
ACTIVATION ENERGIES
ATMOSPHERIC TEMPERATURE
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.
Fil: Schipani, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Aldao, Celso Manuel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
Fil: Ponce, Miguel Adolfo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Mar del Plata. Instituto de Investigación En Ciencia y Tecnología de Materiales (i); Argentina. Universidad Nacional de Mar del Plata. Facultad de Ingeniería; Argentina
description The oxygen adsorption effects on the Schottky barriers height measurements for thick films gas sensors prepared with undoped nanometric SnO2 particles were studied. From electrical measurements, the characteristics of the intergranular potential barriers developed at intergrains were deduced. It is shown that the determination of effective activation energies from conduction vs. 1/temperature curves is not generally a correct manner to estimate barrier heights. This is due to gas adsorption/desorption during the heating and cooling processes, the assumption of emission over the barrier as the dominant conduction mechanism, and the possible oxygen diffusion into or out of the grains.
publishDate 2012
dc.date.none.fl_str_mv 2012-08-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/10741
Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films; American Institute of Physics; AIP Advances; 2; 9-8-2012; 2158-3226
2158-3226
url http://hdl.handle.net/11336/10741
identifier_str_mv Schipani, Federico; Aldao, Celso Manuel; Ponce, Miguel Adolfo; Schottky barriers measurements through Arrhenius plots in gas sensors based on semiconductor films; American Institute of Physics; AIP Advances; 2; 9-8-2012; 2158-3226
2158-3226
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4746417
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4746417
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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