Cita APA

Carbonetto, S. H., García Inza, M. A., Lipovetzky, J., Redin, E. G., Sambuco Salomone, L. I., & Faigon, A. N. (2011). Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry. Web

Citación estilo Chicago

Carbonetto, Sebastián Horacio, Mariano Andrés García Inza, José Lipovetzky, Eduardo Gabriel Redin, Lucas Ignacio Sambuco Salomone, and Adrian Nestor Faigon. Zero Temperature Coefficient Bias in MOS Devices. Dependence On Interface Traps Density, Application to MOS Dosimetry. 2011.

Cita MLA

Carbonetto, Sebastián Horacio, et al. Zero Temperature Coefficient Bias in MOS Devices. Dependence On Interface Traps Density, Application to MOS Dosimetry. 2011.