Non-thermal resistive switching in Mott insulator nanowires

Autores
Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; Schuller, Ivan K.
Año de publicación
2020
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.
Fil: Kalcheim, Yoav. University of California at San Diego; Estados Unidos
Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: del Valle, Javier. University of California at San Diego; Estados Unidos
Fil: Salev, Pavel. University of California at San Diego; Estados Unidos
Fil: Rozenberg, Marcelo. Université Paris Sud; Francia
Fil: Schuller, Ivan K.. University of California at San Diego; Estados Unidos
Materia
RESISTIVE
SWITCHING
MOTT
NON-THERMAL
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/146093
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Non-thermal resistive switching in Mott insulator nanowiresKalcheim, YoavCamjayi, Albertodel Valle, JavierSalev, PavelRozenberg, MarceloSchuller, Ivan K.RESISTIVESWITCHINGMOTTNON-THERMALhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.Fil: Kalcheim, Yoav. University of California at San Diego; Estados UnidosFil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: del Valle, Javier. University of California at San Diego; Estados UnidosFil: Salev, Pavel. University of California at San Diego; Estados UnidosFil: Rozenberg, Marcelo. Université Paris Sud; FranciaFil: Schuller, Ivan K.. University of California at San Diego; Estados UnidosSpringer2020-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/146093Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; et al.; Non-thermal resistive switching in Mott insulator nanowires; Springer; Nature Communications; 11; 1; 6-2020; 1-92041-1723CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.nature.com/articles/s41467-020-16752-1info:eu-repo/semantics/altIdentifier/doi/10.1038/s41467-020-16752-1info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:12:26Zoai:ri.conicet.gov.ar:11336/146093instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:12:26.535CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Non-thermal resistive switching in Mott insulator nanowires
title Non-thermal resistive switching in Mott insulator nanowires
spellingShingle Non-thermal resistive switching in Mott insulator nanowires
Kalcheim, Yoav
RESISTIVE
SWITCHING
MOTT
NON-THERMAL
title_short Non-thermal resistive switching in Mott insulator nanowires
title_full Non-thermal resistive switching in Mott insulator nanowires
title_fullStr Non-thermal resistive switching in Mott insulator nanowires
title_full_unstemmed Non-thermal resistive switching in Mott insulator nanowires
title_sort Non-thermal resistive switching in Mott insulator nanowires
dc.creator.none.fl_str_mv Kalcheim, Yoav
Camjayi, Alberto
del Valle, Javier
Salev, Pavel
Rozenberg, Marcelo
Schuller, Ivan K.
author Kalcheim, Yoav
author_facet Kalcheim, Yoav
Camjayi, Alberto
del Valle, Javier
Salev, Pavel
Rozenberg, Marcelo
Schuller, Ivan K.
author_role author
author2 Camjayi, Alberto
del Valle, Javier
Salev, Pavel
Rozenberg, Marcelo
Schuller, Ivan K.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv RESISTIVE
SWITCHING
MOTT
NON-THERMAL
topic RESISTIVE
SWITCHING
MOTT
NON-THERMAL
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.
Fil: Kalcheim, Yoav. University of California at San Diego; Estados Unidos
Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina
Fil: del Valle, Javier. University of California at San Diego; Estados Unidos
Fil: Salev, Pavel. University of California at San Diego; Estados Unidos
Fil: Rozenberg, Marcelo. Université Paris Sud; Francia
Fil: Schuller, Ivan K.. University of California at San Diego; Estados Unidos
description Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.
publishDate 2020
dc.date.none.fl_str_mv 2020-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/146093
Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; et al.; Non-thermal resistive switching in Mott insulator nanowires; Springer; Nature Communications; 11; 1; 6-2020; 1-9
2041-1723
CONICET Digital
CONICET
url http://hdl.handle.net/11336/146093
identifier_str_mv Kalcheim, Yoav; Camjayi, Alberto; del Valle, Javier; Salev, Pavel; Rozenberg, Marcelo; et al.; Non-thermal resistive switching in Mott insulator nanowires; Springer; Nature Communications; 11; 1; 6-2020; 1-9
2041-1723
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.nature.com/articles/s41467-020-16752-1
info:eu-repo/semantics/altIdentifier/doi/10.1038/s41467-020-16752-1
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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