Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices

Autores
Ghenzi, Néstor; Quinteros, Cynthia Paula; Miranda, E.; Levy, Pablo Eduardo
Año de publicación
2025
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This work explores the potential of Co/HfO2/TiOx/SiO2/Si-based memristive devices for mimicking sensory systems, leveraging the electricalnociceptive properties that arise from their resistive switching characteristics. We demonstrate tunable ON/OFF threshold voltages dependingon the maximum current flowing through the device, enabling volatile and non-volatile memory states achieved using appropriatebiasing conditions. To provide deeper insight into the observed phenomenology, a compact behavioral model driven by the memristor’sinternal state control variable is proposed. The model accurately reproduces the threshold voltage variation as a function of the appliedcurrent compliance. The versatility of the proposed approach is verified as it can handle both filamentary and electron-trapping-baseddevices. Remarkably, the volatile states exhibit frequency-dependent transient responses and sensitization to previous stimulus voltages.These findings pave the way for beyond-memory applications of memristors, including the development of artificial sensory systems.
Fil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Quinteros, Cynthia Paula. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; Argentina
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
memristor
nociceptor
neuron
memory
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/267583
Acceder
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spelling Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devicesGhenzi, NéstorQuinteros, Cynthia PaulaMiranda, E.Levy, Pablo Eduardomemristornociceptorneuronmemoryhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1This work explores the potential of Co/HfO2/TiOx/SiO2/Si-based memristive devices for mimicking sensory systems, leveraging the electricalnociceptive properties that arise from their resistive switching characteristics. We demonstrate tunable ON/OFF threshold voltages dependingon the maximum current flowing through the device, enabling volatile and non-volatile memory states achieved using appropriatebiasing conditions. To provide deeper insight into the observed phenomenology, a compact behavioral model driven by the memristor’sinternal state control variable is proposed. The model accurately reproduces the threshold voltage variation as a function of the appliedcurrent compliance. The versatility of the proposed approach is verified as it can handle both filamentary and electron-trapping-baseddevices. Remarkably, the volatile states exhibit frequency-dependent transient responses and sensitization to previous stimulus voltages.These findings pave the way for beyond-memory applications of memristors, including the development of artificial sensory systems.Fil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Quinteros, Cynthia Paula. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; ArgentinaFil: Miranda, E.. Universitat Autònoma de Barcelona; EspañaFil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Institute of Physics2025-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/267583Ghenzi, Néstor; Quinteros, Cynthia Paula; Miranda, E.; Levy, Pablo Eduardo; Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices; American Institute of Physics; Journal of Applied Physics; 138; 3; 7-2025; 1-190021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://pubs.aip.org/jap/article/138/3/035102/3352905/Characterization-and-modeling-of-the-electricalinfo:eu-repo/semantics/altIdentifier/doi/10.1063/5.0274309info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:47:12Zoai:ri.conicet.gov.ar:11336/267583instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:47:12.528CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
title Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
spellingShingle Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
Ghenzi, Néstor
memristor
nociceptor
neuron
memory
title_short Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
title_full Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
title_fullStr Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
title_full_unstemmed Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
title_sort Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices
dc.creator.none.fl_str_mv Ghenzi, Néstor
Quinteros, Cynthia Paula
Miranda, E.
Levy, Pablo Eduardo
author Ghenzi, Néstor
author_facet Ghenzi, Néstor
Quinteros, Cynthia Paula
Miranda, E.
Levy, Pablo Eduardo
author_role author
author2 Quinteros, Cynthia Paula
Miranda, E.
Levy, Pablo Eduardo
author2_role author
author
author
dc.subject.none.fl_str_mv memristor
nociceptor
neuron
memory
topic memristor
nociceptor
neuron
memory
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv This work explores the potential of Co/HfO2/TiOx/SiO2/Si-based memristive devices for mimicking sensory systems, leveraging the electricalnociceptive properties that arise from their resistive switching characteristics. We demonstrate tunable ON/OFF threshold voltages dependingon the maximum current flowing through the device, enabling volatile and non-volatile memory states achieved using appropriatebiasing conditions. To provide deeper insight into the observed phenomenology, a compact behavioral model driven by the memristor’sinternal state control variable is proposed. The model accurately reproduces the threshold voltage variation as a function of the appliedcurrent compliance. The versatility of the proposed approach is verified as it can handle both filamentary and electron-trapping-baseddevices. Remarkably, the volatile states exhibit frequency-dependent transient responses and sensitization to previous stimulus voltages.These findings pave the way for beyond-memory applications of memristors, including the development of artificial sensory systems.
Fil: Ghenzi, Néstor. Universidad Nacional de Avellaneda. Departamento de Prod. y Trabajo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Quinteros, Cynthia Paula. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; Argentina
Fil: Miranda, E.. Universitat Autònoma de Barcelona; España
Fil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description This work explores the potential of Co/HfO2/TiOx/SiO2/Si-based memristive devices for mimicking sensory systems, leveraging the electricalnociceptive properties that arise from their resistive switching characteristics. We demonstrate tunable ON/OFF threshold voltages dependingon the maximum current flowing through the device, enabling volatile and non-volatile memory states achieved using appropriatebiasing conditions. To provide deeper insight into the observed phenomenology, a compact behavioral model driven by the memristor’sinternal state control variable is proposed. The model accurately reproduces the threshold voltage variation as a function of the appliedcurrent compliance. The versatility of the proposed approach is verified as it can handle both filamentary and electron-trapping-baseddevices. Remarkably, the volatile states exhibit frequency-dependent transient responses and sensitization to previous stimulus voltages.These findings pave the way for beyond-memory applications of memristors, including the development of artificial sensory systems.
publishDate 2025
dc.date.none.fl_str_mv 2025-07
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/267583
Ghenzi, Néstor; Quinteros, Cynthia Paula; Miranda, E.; Levy, Pablo Eduardo; Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices; American Institute of Physics; Journal of Applied Physics; 138; 3; 7-2025; 1-19
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/267583
identifier_str_mv Ghenzi, Néstor; Quinteros, Cynthia Paula; Miranda, E.; Levy, Pablo Eduardo; Characterization and modeling of the electrical nociceptive properties of HfO2/TiOx/SiO2-based memristive devices; American Institute of Physics; Journal of Applied Physics; 138; 3; 7-2025; 1-19
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://pubs.aip.org/jap/article/138/3/035102/3352905/Characterization-and-modeling-of-the-electrical
info:eu-repo/semantics/altIdentifier/doi/10.1063/5.0274309
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.13397

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