Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface

Autores
Roman Acevedo, Wilson Stibens; Ferreyra, Cristian Daniel; Sánchez, M.J.; Acha, Carlos Enrique; Gay, R.; Rubi, Diego
Año de publicación
2018
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.
Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Sánchez, M.J.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina
Fil: Gay, R.. Centro de Investigación Cooperativo nanoGUNE; España
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Materia
Memory devices
Memristor
Electrical conduction
Interfaces
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/89448
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/89448
network_acronym_str CONICETDig
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network_name_str CONICET Digital (CONICET)
spelling Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interfaceRoman Acevedo, Wilson StibensFerreyra, Cristian DanielSánchez, M.J.Acha, Carlos EnriqueGay, R.Rubi, DiegoMemory devicesMemristorElectrical conductionInterfaceshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Sánchez, M.J.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; ArgentinaFil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; ArgentinaFil: Gay, R.. Centro de Investigación Cooperativo nanoGUNE; EspañaFil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaIOP Publishing2018-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/89448Roman Acevedo, Wilson Stibens; Ferreyra, Cristian Daniel; Sánchez, M.J.; Acha, Carlos Enrique; Gay, R.; et al.; Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface; IOP Publishing; Journal of Physics D: Applied Physics; 51; 12; 2-2018; 1-130022-3727CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/aaaed6info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/aaaed6info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T14:30:35Zoai:ri.conicet.gov.ar:11336/89448instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 14:30:35.762CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
title Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
spellingShingle Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
Roman Acevedo, Wilson Stibens
Memory devices
Memristor
Electrical conduction
Interfaces
title_short Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
title_full Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
title_fullStr Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
title_full_unstemmed Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
title_sort Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface
dc.creator.none.fl_str_mv Roman Acevedo, Wilson Stibens
Ferreyra, Cristian Daniel
Sánchez, M.J.
Acha, Carlos Enrique
Gay, R.
Rubi, Diego
author Roman Acevedo, Wilson Stibens
author_facet Roman Acevedo, Wilson Stibens
Ferreyra, Cristian Daniel
Sánchez, M.J.
Acha, Carlos Enrique
Gay, R.
Rubi, Diego
author_role author
author2 Ferreyra, Cristian Daniel
Sánchez, M.J.
Acha, Carlos Enrique
Gay, R.
Rubi, Diego
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Memory devices
Memristor
Electrical conduction
Interfaces
topic Memory devices
Memristor
Electrical conduction
Interfaces
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.
Fil: Roman Acevedo, Wilson Stibens. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Ferreyra, Cristian Daniel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina
Fil: Sánchez, M.J.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina
Fil: Acha, Carlos Enrique. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina
Fil: Gay, R.. Centro de Investigación Cooperativo nanoGUNE; España
Fil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
description The development of reliable redox-based resistive random-access memory devices requires understanding and disentangling concurrent effects present at memristive interfaces. We report on the fabrication and electrical characterization of TiOx/La1/3Ca2/3MnO3-x microstructured interfaces and on the modeling of their memristive behavior. We show that a careful tuning of the applied external electrical stimuli allows controlling the redox process between both layers, obtaining multilevel non-volatile resistance states. We simulate the oxygen vacancies dynamics at the interface between both oxides, and successfully reproduce the experimental electrical behavior after the inclusion of an electronic effect, related to the presence of an n-p diode at the interface. The formation of the diode is due to the n- and p-character of TiOx and La1/3Ca2/3MnO3-x, respectively. Our analysis indicates that oxygen vacancies migration between both layers is triggered after the diode is polarized either in forward mode or in reverse mode above breakdown. Electrical measurements at different temperatures suggest that the diode can be characterized as Zener-type. The advantages of our junctions for their implementation in RRAM devices are finally discussed.
publishDate 2018
dc.date.none.fl_str_mv 2018-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/89448
Roman Acevedo, Wilson Stibens; Ferreyra, Cristian Daniel; Sánchez, M.J.; Acha, Carlos Enrique; Gay, R.; et al.; Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface; IOP Publishing; Journal of Physics D: Applied Physics; 51; 12; 2-2018; 1-13
0022-3727
CONICET Digital
CONICET
url http://hdl.handle.net/11336/89448
identifier_str_mv Roman Acevedo, Wilson Stibens; Ferreyra, Cristian Daniel; Sánchez, M.J.; Acha, Carlos Enrique; Gay, R.; et al.; Concurrent ionic migration and electronic effects at the memristive TiOx/La1/3Ca2/3MnO3-x interface; IOP Publishing; Journal of Physics D: Applied Physics; 51; 12; 2-2018; 1-13
0022-3727
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/1361-6463/aaaed6
info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6463/aaaed6
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846082783818022912
score 13.22299

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