HfO2 based memory devices with rectifying capabilities

Autores
Quinteros, Cynthia Paula; Zaspe, R.; Marlasca, F. G.; Golmar, Federico; Casanova, F.; Stoliar, Pablo Alberto; Hueso, L.; Levy, Pablo Eduardo
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3–4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.
Fil: Quinteros, Cynthia Paula. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Zaspe, R.. CIC nanoGUNE; España
Fil: Marlasca, F. G.. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Centre National de la Recherche Scientifique; Francia. Universite de Nantes; Francia
Fil: Hueso, L.. Fundación Vasca para la Ciencia; España. CIC nanoGUNE; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
memory devices
HfO2
Rectifying devices
Memristors
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/32717
Acceder
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network_name_str CONICET Digital (CONICET)
spelling HfO2 based memory devices with rectifying capabilitiesQuinteros, Cynthia PaulaZaspe, R.Marlasca, F. G.Golmar, FedericoCasanova, F.Stoliar, Pablo AlbertoHueso, L.Levy, Pablo Eduardomemory devicesHfO2Rectifying devicesMemristorshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3–4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.Fil: Quinteros, Cynthia Paula. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Zaspe, R.. CIC nanoGUNE; EspañaFil: Marlasca, F. G.. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; ArgentinaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; EspañaFil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Centre National de la Recherche Scientifique; Francia. Universite de Nantes; FranciaFil: Hueso, L.. Fundación Vasca para la Ciencia; España. CIC nanoGUNE; EspañaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaAmerican Institute of Physics2013-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/32717Levy, Pablo Eduardo; Hueso, L.; Stoliar, Pablo Alberto; Casanova, F.; Golmar, Federico; Marlasca, F. G.; et al.; HfO2 based memory devices with rectifying capabilities; American Institute of Physics; Journal of Applied Physics; 115; 2; 12-2013; 24501-245010021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4861167info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4861167info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:58:42Zoai:ri.conicet.gov.ar:11336/32717instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:58:42.744CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv HfO2 based memory devices with rectifying capabilities
title HfO2 based memory devices with rectifying capabilities
spellingShingle HfO2 based memory devices with rectifying capabilities
Quinteros, Cynthia Paula
memory devices
HfO2
Rectifying devices
Memristors
title_short HfO2 based memory devices with rectifying capabilities
title_full HfO2 based memory devices with rectifying capabilities
title_fullStr HfO2 based memory devices with rectifying capabilities
title_full_unstemmed HfO2 based memory devices with rectifying capabilities
title_sort HfO2 based memory devices with rectifying capabilities
dc.creator.none.fl_str_mv Quinteros, Cynthia Paula
Zaspe, R.
Marlasca, F. G.
Golmar, Federico
Casanova, F.
Stoliar, Pablo Alberto
Hueso, L.
Levy, Pablo Eduardo
author Quinteros, Cynthia Paula
author_facet Quinteros, Cynthia Paula
Zaspe, R.
Marlasca, F. G.
Golmar, Federico
Casanova, F.
Stoliar, Pablo Alberto
Hueso, L.
Levy, Pablo Eduardo
author_role author
author2 Zaspe, R.
Marlasca, F. G.
Golmar, Federico
Casanova, F.
Stoliar, Pablo Alberto
Hueso, L.
Levy, Pablo Eduardo
author2_role author
author
author
author
author
author
author
dc.subject.none.fl_str_mv memory devices
HfO2
Rectifying devices
Memristors
topic memory devices
HfO2
Rectifying devices
Memristors
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3–4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.
Fil: Quinteros, Cynthia Paula. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Zaspe, R.. CIC nanoGUNE; España
Fil: Marlasca, F. G.. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina
Fil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina
Fil: Casanova, F.. CIC nanoGUNE; España. Fundación Vasca para la Ciencia; España
Fil: Stoliar, Pablo Alberto. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Centre National de la Recherche Scientifique; Francia. Universite de Nantes; Francia
Fil: Hueso, L.. Fundación Vasca para la Ciencia; España. CIC nanoGUNE; España
Fil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica. Gerencia del Área Investigaciones y Aplicaciones no Nucleares; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3–4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices.
publishDate 2013
dc.date.none.fl_str_mv 2013-12
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/32717
Levy, Pablo Eduardo; Hueso, L.; Stoliar, Pablo Alberto; Casanova, F.; Golmar, Federico; Marlasca, F. G.; et al.; HfO2 based memory devices with rectifying capabilities; American Institute of Physics; Journal of Applied Physics; 115; 2; 12-2013; 24501-24501
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/32717
identifier_str_mv Levy, Pablo Eduardo; Hueso, L.; Stoliar, Pablo Alberto; Casanova, F.; Golmar, Federico; Marlasca, F. G.; et al.; HfO2 based memory devices with rectifying capabilities; American Institute of Physics; Journal of Applied Physics; 115; 2; 12-2013; 24501-24501
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4861167
info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4861167
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842269536654458880
score 13.13397

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