Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations

Autores
Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Arce, Roberto Delio; Dussan Cuenca, Anderson; Buitrago, Roman Horacio
Año de publicación
2004
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the thermally stimulated conductivity (TSC) experiment is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations during the initial isothermal waiting time and the subsequent heating at a constant rate. The simulated TSC spectra reproduce the reported dependence of the measured spectra on the heating rate and the starting temperature. An approximate expression to obtain the DOS distribution in the upper half of the band gap from TSC spectra is deduced. The application of this expression to simulated TSC curves provides an accurate reconstruction of the introduced DOS. The TSC method compares favourably to the modulated photoconductivity experiments, both from the quality of the DOS reconstruction and the experimental simplicity of the method.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Dussan Cuenca, Anderson. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Defects
Silicon
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/26828
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulationsSchmidt, Javier AlejandroKoropecki, Roberto RomanArce, Roberto DelioDussan Cuenca, AndersonBuitrago, Roman HoracioDefectsSiliconhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the thermally stimulated conductivity (TSC) experiment is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations during the initial isothermal waiting time and the subsequent heating at a constant rate. The simulated TSC spectra reproduce the reported dependence of the measured spectra on the heating rate and the starting temperature. An approximate expression to obtain the DOS distribution in the upper half of the band gap from TSC spectra is deduced. The application of this expression to simulated TSC curves provides an accurate reconstruction of the introduced DOS. The TSC method compares favourably to the modulated photoconductivity experiments, both from the quality of the DOS reconstruction and the experimental simplicity of the method.Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Dussan Cuenca, Anderson. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science2004-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/26828Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Arce, Roberto Delio; Dussan Cuenca, Anderson ; Buitrago, Roman Horacio; Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 4-2004; 322-3250022-3093CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2004.02.065info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0022309304001413info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:35:58Zoai:ri.conicet.gov.ar:11336/26828instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:35:58.581CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
title Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
spellingShingle Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
Schmidt, Javier Alejandro
Defects
Silicon
title_short Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
title_full Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
title_fullStr Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
title_full_unstemmed Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
title_sort Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations
dc.creator.none.fl_str_mv Schmidt, Javier Alejandro
Koropecki, Roberto Roman
Arce, Roberto Delio
Dussan Cuenca, Anderson
Buitrago, Roman Horacio
author Schmidt, Javier Alejandro
author_facet Schmidt, Javier Alejandro
Koropecki, Roberto Roman
Arce, Roberto Delio
Dussan Cuenca, Anderson
Buitrago, Roman Horacio
author_role author
author2 Koropecki, Roberto Roman
Arce, Roberto Delio
Dussan Cuenca, Anderson
Buitrago, Roman Horacio
author2_role author
author
author
author
dc.subject.none.fl_str_mv Defects
Silicon
topic Defects
Silicon
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the thermally stimulated conductivity (TSC) experiment is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations during the initial isothermal waiting time and the subsequent heating at a constant rate. The simulated TSC spectra reproduce the reported dependence of the measured spectra on the heating rate and the starting temperature. An approximate expression to obtain the DOS distribution in the upper half of the band gap from TSC spectra is deduced. The application of this expression to simulated TSC curves provides an accurate reconstruction of the introduced DOS. The TSC method compares favourably to the modulated photoconductivity experiments, both from the quality of the DOS reconstruction and the experimental simplicity of the method.
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Dussan Cuenca, Anderson. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Buitrago, Roman Horacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the thermally stimulated conductivity (TSC) experiment is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations during the initial isothermal waiting time and the subsequent heating at a constant rate. The simulated TSC spectra reproduce the reported dependence of the measured spectra on the heating rate and the starting temperature. An approximate expression to obtain the DOS distribution in the upper half of the band gap from TSC spectra is deduced. The application of this expression to simulated TSC curves provides an accurate reconstruction of the introduced DOS. The TSC method compares favourably to the modulated photoconductivity experiments, both from the quality of the DOS reconstruction and the experimental simplicity of the method.
publishDate 2004
dc.date.none.fl_str_mv 2004-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/26828
Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Arce, Roberto Delio; Dussan Cuenca, Anderson ; Buitrago, Roman Horacio; Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 4-2004; 322-325
0022-3093
CONICET Digital
CONICET
url http://hdl.handle.net/11336/26828
identifier_str_mv Schmidt, Javier Alejandro; Koropecki, Roberto Roman; Arce, Roberto Delio; Dussan Cuenca, Anderson ; Buitrago, Roman Horacio; Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 4-2004; 322-325
0022-3093
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2004.02.065
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0022309304001413
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614379350261760
score 13.070432

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