Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires

Autores
Chia, A. C. E.; Tirado, Monica Cecilia; Thouin, F.; Leonelli, R.; Comedi, David Mario; Lapierre, R. R.
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states across the bandgap and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 43% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25x improvement in carrier lifetime upon passivation. The fabrication and passivation methods used can be easily implemented into future optoelectronic applications.
Fil: Chia, A. C. E.. Mc Master University; Canadá
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucuman. Facultad de Cs.exactas y Tecnologia. Departamento de Fisica. Departamento de Nanomateriales y Prop. Dielectricas; Argentina
Fil: Thouin, F.. University Of Montreal; Canadá
Fil: Leonelli, R.. University Of Montreal; Canadá
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; Argentina
Fil: Lapierre, R. R.. Mc Master University; Canadá
Materia
Alinp
Gaas Nanowire
Surface Depletion
Capacitance-Voltage Characterization
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/7211
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/7211
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Surface depletion and electrical transport model of AlInP-passivated GaAs nanowiresChia, A. C. E.Tirado, Monica CeciliaThouin, F.Leonelli, R.Comedi, David MarioLapierre, R. R.AlinpGaas NanowireSurface DepletionCapacitance-Voltage Characterizationhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states across the bandgap and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 43% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25x improvement in carrier lifetime upon passivation. The fabrication and passivation methods used can be easily implemented into future optoelectronic applications.Fil: Chia, A. C. E.. Mc Master University; CanadáFil: Tirado, Monica Cecilia. Universidad Nacional de Tucuman. Facultad de Cs.exactas y Tecnologia. Departamento de Fisica. Departamento de Nanomateriales y Prop. Dielectricas; ArgentinaFil: Thouin, F.. University Of Montreal; CanadáFil: Leonelli, R.. University Of Montreal; CanadáFil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; ArgentinaFil: Lapierre, R. R.. Mc Master University; CanadáIop Publishing2013-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/7211Chia, A. C. E.; Tirado, Monica Cecilia; Thouin, F.; Leonelli, R.; Comedi, David Mario; et al.; Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires; Iop Publishing; Semiconductor Science And Technology; 28; 9-2013; 105026-1050340268-1242enginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0268-1242/28/10/105026/metainfo:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/28/10/105026info:eu-repo/semantics/altIdentifier/doi/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:24:29Zoai:ri.conicet.gov.ar:11336/7211instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:24:29.362CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
title Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
spellingShingle Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
Chia, A. C. E.
Alinp
Gaas Nanowire
Surface Depletion
Capacitance-Voltage Characterization
title_short Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
title_full Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
title_fullStr Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
title_full_unstemmed Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
title_sort Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires
dc.creator.none.fl_str_mv Chia, A. C. E.
Tirado, Monica Cecilia
Thouin, F.
Leonelli, R.
Comedi, David Mario
Lapierre, R. R.
author Chia, A. C. E.
author_facet Chia, A. C. E.
Tirado, Monica Cecilia
Thouin, F.
Leonelli, R.
Comedi, David Mario
Lapierre, R. R.
author_role author
author2 Tirado, Monica Cecilia
Thouin, F.
Leonelli, R.
Comedi, David Mario
Lapierre, R. R.
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Alinp
Gaas Nanowire
Surface Depletion
Capacitance-Voltage Characterization
topic Alinp
Gaas Nanowire
Surface Depletion
Capacitance-Voltage Characterization
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states across the bandgap and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 43% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25x improvement in carrier lifetime upon passivation. The fabrication and passivation methods used can be easily implemented into future optoelectronic applications.
Fil: Chia, A. C. E.. Mc Master University; Canadá
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucuman. Facultad de Cs.exactas y Tecnologia. Departamento de Fisica. Departamento de Nanomateriales y Prop. Dielectricas; Argentina
Fil: Thouin, F.. University Of Montreal; Canadá
Fil: Leonelli, R.. University Of Montreal; Canadá
Fil: Comedi, David Mario. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Solido; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Tucumán; Argentina
Fil: Lapierre, R. R.. Mc Master University; Canadá
description Fabrication, current-voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire (NW) ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current-voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states across the bandgap and including a NW diameter distribution. Scanning electron microscopy, capacitance-voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. A 43% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration of the NWs. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. As final confirmation of effective passivation, time-resolved photoluminescence measurements showed a 25x improvement in carrier lifetime upon passivation. The fabrication and passivation methods used can be easily implemented into future optoelectronic applications.
publishDate 2013
dc.date.none.fl_str_mv 2013-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/7211
Chia, A. C. E.; Tirado, Monica Cecilia; Thouin, F.; Leonelli, R.; Comedi, David Mario; et al.; Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires; Iop Publishing; Semiconductor Science And Technology; 28; 9-2013; 105026-105034
0268-1242
url http://hdl.handle.net/11336/7211
identifier_str_mv Chia, A. C. E.; Tirado, Monica Cecilia; Thouin, F.; Leonelli, R.; Comedi, David Mario; et al.; Surface depletion and electrical transport model of AlInP-passivated GaAs nanowires; Iop Publishing; Semiconductor Science And Technology; 28; 9-2013; 105026-105034
0268-1242
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/article/10.1088/0268-1242/28/10/105026/meta
info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/28/10/105026
info:eu-repo/semantics/altIdentifier/doi/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Iop Publishing
publisher.none.fl_str_mv Iop Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842981359130247168
score 12.48226

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