Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy

Autores
Tirado, Monica Cecilia; Comedi, David Mario; LaPierre, Ray R.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Vertically aligned GaAs nanowire (NW) bundles grown by gas-source molecular beam epitaxy on an n-doped GaAs substrate by a metal catalysis method and embedded in an insulating matrix (SU8-2) were studied by impedance spectroscopy. The DC current-voltage characteristics measured between Au dot contacts to the NW tips and the substrate exhibited Schottky behavior. A detailed analysis of the impedance data measured in reverse bias conditions is presented, which enables the elimination of the stray capacitance due to the insulating matrix, and the separation of the different contributions to the total admittance from the metal/NW Schottky interface and from the NW region beyond the barrier region. The observed NW conductances and capacitances are shown to be consistent with rough estimates based on the GaAs conductivity and permittivity data and the NW dimensions, and the NW conductance increases as a power law of the frequency. Possible charge transport mechanisms to explain this result are discussed.
Fil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Propiedades Dieléctricas; Argentina
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina
Fil: LaPierre, Ray R.. Mc Master University; Canadá
Materia
Gaas
Impedance Spectroscopy
Nanowire
Semiconductor
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/72699
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/72699
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxyTirado, Monica CeciliaComedi, David MarioLaPierre, Ray R.GaasImpedance SpectroscopyNanowireSemiconductorhttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2Vertically aligned GaAs nanowire (NW) bundles grown by gas-source molecular beam epitaxy on an n-doped GaAs substrate by a metal catalysis method and embedded in an insulating matrix (SU8-2) were studied by impedance spectroscopy. The DC current-voltage characteristics measured between Au dot contacts to the NW tips and the substrate exhibited Schottky behavior. A detailed analysis of the impedance data measured in reverse bias conditions is presented, which enables the elimination of the stray capacitance due to the insulating matrix, and the separation of the different contributions to the total admittance from the metal/NW Schottky interface and from the NW region beyond the barrier region. The observed NW conductances and capacitances are shown to be consistent with rough estimates based on the GaAs conductivity and permittivity data and the NW dimensions, and the NW conductance increases as a power law of the frequency. Possible charge transport mechanisms to explain this result are discussed.Fil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Propiedades Dieléctricas; ArgentinaFil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; ArgentinaFil: LaPierre, Ray R.. Mc Master University; CanadáElsevier Science Sa2010-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/72699Tirado, Monica Cecilia; Comedi, David Mario; LaPierre, Ray R.; Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy; Elsevier Science Sa; Journal of Alloys and Compounds; 495; 2; 4-2010; 443-4450925-8388CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2009.10.084info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S092583880902060Xinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-03T09:46:45Zoai:ri.conicet.gov.ar:11336/72699instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-03 09:46:45.951CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
title Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
spellingShingle Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
Tirado, Monica Cecilia
Gaas
Impedance Spectroscopy
Nanowire
Semiconductor
title_short Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
title_full Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
title_fullStr Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
title_full_unstemmed Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
title_sort Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy
dc.creator.none.fl_str_mv Tirado, Monica Cecilia
Comedi, David Mario
LaPierre, Ray R.
author Tirado, Monica Cecilia
author_facet Tirado, Monica Cecilia
Comedi, David Mario
LaPierre, Ray R.
author_role author
author2 Comedi, David Mario
LaPierre, Ray R.
author2_role author
author
dc.subject.none.fl_str_mv Gaas
Impedance Spectroscopy
Nanowire
Semiconductor
topic Gaas
Impedance Spectroscopy
Nanowire
Semiconductor
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Vertically aligned GaAs nanowire (NW) bundles grown by gas-source molecular beam epitaxy on an n-doped GaAs substrate by a metal catalysis method and embedded in an insulating matrix (SU8-2) were studied by impedance spectroscopy. The DC current-voltage characteristics measured between Au dot contacts to the NW tips and the substrate exhibited Schottky behavior. A detailed analysis of the impedance data measured in reverse bias conditions is presented, which enables the elimination of the stray capacitance due to the insulating matrix, and the separation of the different contributions to the total admittance from the metal/NW Schottky interface and from the NW region beyond the barrier region. The observed NW conductances and capacitances are shown to be consistent with rough estimates based on the GaAs conductivity and permittivity data and the NW dimensions, and the NW conductance increases as a power law of the frequency. Possible charge transport mechanisms to explain this result are discussed.
Fil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física. Laboratorio de Propiedades Dieléctricas; Argentina
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física. Laboratorio de Física del Sólido; Argentina
Fil: LaPierre, Ray R.. Mc Master University; Canadá
description Vertically aligned GaAs nanowire (NW) bundles grown by gas-source molecular beam epitaxy on an n-doped GaAs substrate by a metal catalysis method and embedded in an insulating matrix (SU8-2) were studied by impedance spectroscopy. The DC current-voltage characteristics measured between Au dot contacts to the NW tips and the substrate exhibited Schottky behavior. A detailed analysis of the impedance data measured in reverse bias conditions is presented, which enables the elimination of the stray capacitance due to the insulating matrix, and the separation of the different contributions to the total admittance from the metal/NW Schottky interface and from the NW region beyond the barrier region. The observed NW conductances and capacitances are shown to be consistent with rough estimates based on the GaAs conductivity and permittivity data and the NW dimensions, and the NW conductance increases as a power law of the frequency. Possible charge transport mechanisms to explain this result are discussed.
publishDate 2010
dc.date.none.fl_str_mv 2010-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/72699
Tirado, Monica Cecilia; Comedi, David Mario; LaPierre, Ray R.; Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy; Elsevier Science Sa; Journal of Alloys and Compounds; 495; 2; 4-2010; 443-445
0925-8388
CONICET Digital
CONICET
url http://hdl.handle.net/11336/72699
identifier_str_mv Tirado, Monica Cecilia; Comedi, David Mario; LaPierre, Ray R.; Impedance spectroscopy characterization of GaAs nanowire bundles grown by metal-catalyzed molecular beam epitaxy; Elsevier Science Sa; Journal of Alloys and Compounds; 495; 2; 4-2010; 443-445
0925-8388
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jallcom.2009.10.084
info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S092583880902060X
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842268815170207744
score 13.13397

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