Electrical transport and optical model of GaAs-AlInP core-shell nanowires

Autores
Chia, A. C. E.; Tirado, Monica Cecilia; Li, Y.; Zhao, S.; Mi, Z.; Comedi, David Mario; Lapierre, R. R.
Año de publicación
2012
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
GaAs nanowires were passivated by AlInP shells grown by the Au-assisted vapor-liquid-solid method in a gas source molecular beam epitaxy system. Transmission electron microscopy confirmed a core-shell GaAs-AlInP structure. Current-voltage measurements on ensemble nanowires indicated improved carrier transport properties in the passivated nanowires as compared to their unpassivated counterpart. Similarly, individual nanowires showed improved photoluminescence intensity upon passivation. A detailed model is presented to quantify the observed improvements in nanowire conduction and luminescence in terms of a reduction in surface charge trap density and surface recombination velocity upon passivation. The model includes the effects of high-level injection, bulk recombination, and surface recombination. The model can be used as a tool for assessing various passivation methods. © 2012 American Institute of Physics.
Fil: Chia, A. C. E.. Mc Master University; Canadá
Fil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Li, Y.. McGill University; Canadá
Fil: Zhao, S.. McGill University; Canadá
Fil: Mi, Z.. McGill University; Canadá
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Lapierre, R. R.. Mc Master University; Canadá
Materia
Core-Shell Nanowires
III-V semiconductors
Electrical Passivation
Optical Properties
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/60885
Acceder
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repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Electrical transport and optical model of GaAs-AlInP core-shell nanowiresChia, A. C. E.Tirado, Monica CeciliaLi, Y.Zhao, S.Mi, Z.Comedi, David MarioLapierre, R. R.Core-Shell NanowiresIII-V semiconductorsElectrical PassivationOptical Propertieshttps://purl.org/becyt/ford/2.10https://purl.org/becyt/ford/2GaAs nanowires were passivated by AlInP shells grown by the Au-assisted vapor-liquid-solid method in a gas source molecular beam epitaxy system. Transmission electron microscopy confirmed a core-shell GaAs-AlInP structure. Current-voltage measurements on ensemble nanowires indicated improved carrier transport properties in the passivated nanowires as compared to their unpassivated counterpart. Similarly, individual nanowires showed improved photoluminescence intensity upon passivation. A detailed model is presented to quantify the observed improvements in nanowire conduction and luminescence in terms of a reduction in surface charge trap density and surface recombination velocity upon passivation. The model includes the effects of high-level injection, bulk recombination, and surface recombination. The model can be used as a tool for assessing various passivation methods. © 2012 American Institute of Physics.Fil: Chia, A. C. E.. Mc Master University; CanadáFil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; ArgentinaFil: Li, Y.. McGill University; CanadáFil: Zhao, S.. McGill University; CanadáFil: Mi, Z.. McGill University; CanadáFil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; ArgentinaFil: Lapierre, R. R.. Mc Master University; CanadáAmerican Institute of Physics2012-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/60885Chia, A. C. E.; Tirado, Monica Cecilia; Li, Y.; Zhao, S.; Mi, Z.; et al.; Electrical transport and optical model of GaAs-AlInP core-shell nanowires; American Institute of Physics; Journal of Applied Physics; 111; 9; 5-2012; 94319-943250021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4716011info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4716011info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:43:26Zoai:ri.conicet.gov.ar:11336/60885instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:43:26.971CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Electrical transport and optical model of GaAs-AlInP core-shell nanowires
title Electrical transport and optical model of GaAs-AlInP core-shell nanowires
spellingShingle Electrical transport and optical model of GaAs-AlInP core-shell nanowires
Chia, A. C. E.
Core-Shell Nanowires
III-V semiconductors
Electrical Passivation
Optical Properties
title_short Electrical transport and optical model of GaAs-AlInP core-shell nanowires
title_full Electrical transport and optical model of GaAs-AlInP core-shell nanowires
title_fullStr Electrical transport and optical model of GaAs-AlInP core-shell nanowires
title_full_unstemmed Electrical transport and optical model of GaAs-AlInP core-shell nanowires
title_sort Electrical transport and optical model of GaAs-AlInP core-shell nanowires
dc.creator.none.fl_str_mv Chia, A. C. E.
Tirado, Monica Cecilia
Li, Y.
Zhao, S.
Mi, Z.
Comedi, David Mario
Lapierre, R. R.
author Chia, A. C. E.
author_facet Chia, A. C. E.
Tirado, Monica Cecilia
Li, Y.
Zhao, S.
Mi, Z.
Comedi, David Mario
Lapierre, R. R.
author_role author
author2 Tirado, Monica Cecilia
Li, Y.
Zhao, S.
Mi, Z.
Comedi, David Mario
Lapierre, R. R.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Core-Shell Nanowires
III-V semiconductors
Electrical Passivation
Optical Properties
topic Core-Shell Nanowires
III-V semiconductors
Electrical Passivation
Optical Properties
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv GaAs nanowires were passivated by AlInP shells grown by the Au-assisted vapor-liquid-solid method in a gas source molecular beam epitaxy system. Transmission electron microscopy confirmed a core-shell GaAs-AlInP structure. Current-voltage measurements on ensemble nanowires indicated improved carrier transport properties in the passivated nanowires as compared to their unpassivated counterpart. Similarly, individual nanowires showed improved photoluminescence intensity upon passivation. A detailed model is presented to quantify the observed improvements in nanowire conduction and luminescence in terms of a reduction in surface charge trap density and surface recombination velocity upon passivation. The model includes the effects of high-level injection, bulk recombination, and surface recombination. The model can be used as a tool for assessing various passivation methods. © 2012 American Institute of Physics.
Fil: Chia, A. C. E.. Mc Master University; Canadá
Fil: Tirado, Monica Cecilia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Li, Y.. McGill University; Canadá
Fil: Zhao, S.. McGill University; Canadá
Fil: Mi, Z.. McGill University; Canadá
Fil: Comedi, David Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de Tucumán. Facultad de Ciencias Exactas y Tecnología. Departamento de Física; Argentina
Fil: Lapierre, R. R.. Mc Master University; Canadá
description GaAs nanowires were passivated by AlInP shells grown by the Au-assisted vapor-liquid-solid method in a gas source molecular beam epitaxy system. Transmission electron microscopy confirmed a core-shell GaAs-AlInP structure. Current-voltage measurements on ensemble nanowires indicated improved carrier transport properties in the passivated nanowires as compared to their unpassivated counterpart. Similarly, individual nanowires showed improved photoluminescence intensity upon passivation. A detailed model is presented to quantify the observed improvements in nanowire conduction and luminescence in terms of a reduction in surface charge trap density and surface recombination velocity upon passivation. The model includes the effects of high-level injection, bulk recombination, and surface recombination. The model can be used as a tool for assessing various passivation methods. © 2012 American Institute of Physics.
publishDate 2012
dc.date.none.fl_str_mv 2012-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/60885
Chia, A. C. E.; Tirado, Monica Cecilia; Li, Y.; Zhao, S.; Mi, Z.; et al.; Electrical transport and optical model of GaAs-AlInP core-shell nanowires; American Institute of Physics; Journal of Applied Physics; 111; 9; 5-2012; 94319-94325
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/60885
identifier_str_mv Chia, A. C. E.; Tirado, Monica Cecilia; Li, Y.; Zhao, S.; Mi, Z.; et al.; Electrical transport and optical model of GaAs-AlInP core-shell nanowires; American Institute of Physics; Journal of Applied Physics; 111; 9; 5-2012; 94319-94325
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4716011
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4716011
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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