Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation

Autores
Cappelletti, Marcelo Ángel; Casas, Guillermo; Morales, Daniel Martin; Hasperué, Waldo; Peltzer y Blanca, Eitel Leopoldo
Año de publicación
2016
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; Argentina
Fil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
Materia
DISPLACEMENT DAMAGE DOSE
GAAS SOLAR CELL
GENETIC ALGORITHMS
SPACE RADIATION
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/115553
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulationCappelletti, Marcelo ÁngelCasas, GuillermoMorales, Daniel MartinHasperué, WaldoPeltzer y Blanca, Eitel LeopoldoDISPLACEMENT DAMAGE DOSEGAAS SOLAR CELLGENETIC ALGORITHMSSPACE RADIATIONhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; ArgentinaFil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; ArgentinaFil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; ArgentinaFil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; ArgentinaIOP Publishing2016-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/115553Cappelletti, Marcelo Ángel; Casas, Guillermo; Morales, Daniel Martin; Hasperué, Waldo; Peltzer y Blanca, Eitel Leopoldo; Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation; IOP Publishing; Semiconductor Science And Technology; 31; 11; 10-2016; 115020-1150340268-1242CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/0268-1242/31/11/115020info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/31/11/115020info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-10T13:07:20Zoai:ri.conicet.gov.ar:11336/115553instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-10 13:07:20.495CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
title Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
spellingShingle Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
Cappelletti, Marcelo Ángel
DISPLACEMENT DAMAGE DOSE
GAAS SOLAR CELL
GENETIC ALGORITHMS
SPACE RADIATION
title_short Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
title_full Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
title_fullStr Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
title_full_unstemmed Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
title_sort Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation
dc.creator.none.fl_str_mv Cappelletti, Marcelo Ángel
Casas, Guillermo
Morales, Daniel Martin
Hasperué, Waldo
Peltzer y Blanca, Eitel Leopoldo
author Cappelletti, Marcelo Ángel
author_facet Cappelletti, Marcelo Ángel
Casas, Guillermo
Morales, Daniel Martin
Hasperué, Waldo
Peltzer y Blanca, Eitel Leopoldo
author_role author
author2 Casas, Guillermo
Morales, Daniel Martin
Hasperué, Waldo
Peltzer y Blanca, Eitel Leopoldo
author2_role author
author
author
author
dc.subject.none.fl_str_mv DISPLACEMENT DAMAGE DOSE
GAAS SOLAR CELL
GENETIC ALGORITHMS
SPACE RADIATION
topic DISPLACEMENT DAMAGE DOSE
GAAS SOLAR CELL
GENETIC ALGORITHMS
SPACE RADIATION
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional Arturo Jauretche; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Morales, Daniel Martin. Universidad Nacional Arturo Jauretche; Argentina
Fil: Hasperué, Waldo. Universidad Nacional Arturo Jauretche; Argentina. Universidad Nacional de La Plata. Facultad de Informática. Instituto de Investigación en Informática Lidi; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia. Grupo de Estudio de Materiales y Dispositivos Electrónicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
description In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies.
publishDate 2016
dc.date.none.fl_str_mv 2016-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/115553
Cappelletti, Marcelo Ángel; Casas, Guillermo; Morales, Daniel Martin; Hasperué, Waldo; Peltzer y Blanca, Eitel Leopoldo; Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation; IOP Publishing; Semiconductor Science And Technology; 31; 11; 10-2016; 115020-115034
0268-1242
CONICET Digital
CONICET
url http://hdl.handle.net/11336/115553
identifier_str_mv Cappelletti, Marcelo Ángel; Casas, Guillermo; Morales, Daniel Martin; Hasperué, Waldo; Peltzer y Blanca, Eitel Leopoldo; Study of the electrical parameters degradation of GaAs sub-cells for triple junction space solar cells by computer simulation; IOP Publishing; Semiconductor Science And Technology; 31; 11; 10-2016; 115020-115034
0268-1242
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://iopscience.iop.org/article/10.1088/0268-1242/31/11/115020
info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/31/11/115020
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1842980325830950912
score 12.993085

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