Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools

Autores
Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Ruiz Tobon, Carlos Mario; Schmidt, Javier Alejandro
Año de publicación
2017
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at −2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ruiz Tobon, Carlos Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
Materia
Solar Cells
Amorphous Silicion
Computer Modeling
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/24208
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling toolsRubinelli, Francisco AlbertoRamirez Jimenez, HelenaRuiz Tobon, Carlos MarioSchmidt, Javier AlejandroSolar CellsAmorphous SilicionComputer Modelinghttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at −2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Ruiz Tobon, Carlos Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; ArgentinaAmerican Institute of Physics2017-05info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/24208Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Ruiz Tobon, Carlos Mario; Schmidt, Javier Alejandro; Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools; American Institute of Physics; Journal of Applied Physics; 121; 5-2017; 1845021-184502140021-8979CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4983010info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4983010info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:41:25Zoai:ri.conicet.gov.ar:11336/24208instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:41:26.289CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
title Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
spellingShingle Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
Rubinelli, Francisco Alberto
Solar Cells
Amorphous Silicion
Computer Modeling
title_short Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
title_full Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
title_fullStr Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
title_full_unstemmed Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
title_sort Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools
dc.creator.none.fl_str_mv Rubinelli, Francisco Alberto
Ramirez Jimenez, Helena
Ruiz Tobon, Carlos Mario
Schmidt, Javier Alejandro
author Rubinelli, Francisco Alberto
author_facet Rubinelli, Francisco Alberto
Ramirez Jimenez, Helena
Ruiz Tobon, Carlos Mario
Schmidt, Javier Alejandro
author_role author
author2 Ramirez Jimenez, Helena
Ruiz Tobon, Carlos Mario
Schmidt, Javier Alejandro
author2_role author
author
author
dc.subject.none.fl_str_mv Solar Cells
Amorphous Silicion
Computer Modeling
topic Solar Cells
Amorphous Silicion
Computer Modeling
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at −2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ramirez Jimenez, Helena. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Ruiz Tobon, Carlos Mario. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Física del Litoral. Universidad Nacional del Litoral. Instituto de Física del Litoral; Argentina
description Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at −2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.
publishDate 2017
dc.date.none.fl_str_mv 2017-05
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/24208
Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Ruiz Tobon, Carlos Mario; Schmidt, Javier Alejandro; Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools; American Institute of Physics; Journal of Applied Physics; 121; 5-2017; 1845021-18450214
0021-8979
CONICET Digital
CONICET
url http://hdl.handle.net/11336/24208
identifier_str_mv Rubinelli, Francisco Alberto; Ramirez Jimenez, Helena; Ruiz Tobon, Carlos Mario; Schmidt, Javier Alejandro; Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools; American Institute of Physics; Journal of Applied Physics; 121; 5-2017; 1845021-18450214
0021-8979
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4983010
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4983010
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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