Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
- Autores
- Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto
- Año de publicación
- 2002
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.
Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J.K.. Utrecht University; Países Bajos
Fil: Schropp, R.E.I.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina - Materia
-
Amorphous Materials
Solar Cells
Donor And Acceptor States
Amphoteric States - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/30069
Ver los metadatos del registro completo
id |
CONICETDig_5c9cdb3c4d2dc36da9288eabf880a0a2 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/30069 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled statesKlimovsky, E,Rath, J.K.Schropp, R.E.I.Rubinelli, Francisco AlbertoAmorphous MaterialsSolar CellsDonor And Acceptor StatesAmphoteric Stateshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rath, J.K.. Utrecht University; Países BajosFil: Schropp, R.E.I.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science Sa2002-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/30069Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-2190040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/S0040-6090(02)00972-0info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:31:00Zoai:ri.conicet.gov.ar:11336/30069instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:31:00.978CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
title |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
spellingShingle |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states Klimovsky, E, Amorphous Materials Solar Cells Donor And Acceptor States Amphoteric States |
title_short |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
title_full |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
title_fullStr |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
title_full_unstemmed |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
title_sort |
Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states |
dc.creator.none.fl_str_mv |
Klimovsky, E, Rath, J.K. Schropp, R.E.I. Rubinelli, Francisco Alberto |
author |
Klimovsky, E, |
author_facet |
Klimovsky, E, Rath, J.K. Schropp, R.E.I. Rubinelli, Francisco Alberto |
author_role |
author |
author2 |
Rath, J.K. Schropp, R.E.I. Rubinelli, Francisco Alberto |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
Amorphous Materials Solar Cells Donor And Acceptor States Amphoteric States |
topic |
Amorphous Materials Solar Cells Donor And Acceptor States Amphoteric States |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 |
dc.description.none.fl_txt_mv |
In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states. Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Rath, J.K.. Utrecht University; Países Bajos Fil: Schropp, R.E.I.. Utrecht University; Países Bajos Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina |
description |
In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states. |
publishDate |
2002 |
dc.date.none.fl_str_mv |
2002-06 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/30069 Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-219 0040-6090 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/30069 |
identifier_str_mv |
Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-219 0040-6090 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1016/S0040-6090(02)00972-0 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier Science Sa |
publisher.none.fl_str_mv |
Elsevier Science Sa |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844614319319285760 |
score |
13.070432 |