Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states

Autores
Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto
Año de publicación
2002
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.
Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J.K.. Utrecht University; Países Bajos
Fil: Schropp, R.E.I.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Materia
Amorphous Materials
Solar Cells
Donor And Acceptor States
Amphoteric States
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/30069
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/30069
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled statesKlimovsky, E,Rath, J.K.Schropp, R.E.I.Rubinelli, Francisco AlbertoAmorphous MaterialsSolar CellsDonor And Acceptor StatesAmphoteric Stateshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rath, J.K.. Utrecht University; Países BajosFil: Schropp, R.E.I.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science Sa2002-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/30069Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-2190040-6090CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/S0040-6090(02)00972-0info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T12:03:26Zoai:ri.conicet.gov.ar:11336/30069instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 12:03:27.141CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
title Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
spellingShingle Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
Klimovsky, E,
Amorphous Materials
Solar Cells
Donor And Acceptor States
Amphoteric States
title_short Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
title_full Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
title_fullStr Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
title_full_unstemmed Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
title_sort Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states
dc.creator.none.fl_str_mv Klimovsky, E,
Rath, J.K.
Schropp, R.E.I.
Rubinelli, Francisco Alberto
author Klimovsky, E,
author_facet Klimovsky, E,
Rath, J.K.
Schropp, R.E.I.
Rubinelli, Francisco Alberto
author_role author
author2 Rath, J.K.
Schropp, R.E.I.
Rubinelli, Francisco Alberto
author2_role author
author
author
dc.subject.none.fl_str_mv Amorphous Materials
Solar Cells
Donor And Acceptor States
Amphoteric States
topic Amorphous Materials
Solar Cells
Donor And Acceptor States
Amphoteric States
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.
Fil: Klimovsky, E,. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Rath, J.K.. Utrecht University; Países Bajos
Fil: Schropp, R.E.I.. Utrecht University; Países Bajos
Fil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
description In this paper we investigate in a-Si:H-based devices the accuracy of approximating dangling bonds by pairs of donor-like and acceptor-like states. We discuss the impact of using this approximation in device modeling by studying the dark current–voltage, the illuminated current–voltage and the spectral response curves. We find that the relative error introduced by this approximation in these characteristic curves can be tolerated when the correlation energy is assumed to be positive and when the capture crosssection of neutral states adopted is much smaller than that of charged states. A wide range of intrinsic layer-thickness values, density of states and temperatures has been investigated. This approximation fails when the correlation energy adopted is negative, and is not accurate enough when the correlation energy is assumed to be positive but the capture cross-section of neutral states adopted is higher than that of charged states.
publishDate 2002
dc.date.none.fl_str_mv 2002-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/30069
Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-219
0040-6090
CONICET Digital
CONICET
url http://hdl.handle.net/11336/30069
identifier_str_mv Klimovsky, E,; Rath, J.K.; Schropp, R.E.I.; Rubinelli, Francisco Alberto; Errors introduced in the predicted a-Si:H based devices characteristic curves when dangling bonds are modeled by de-coupled states; Elsevier Science Sa; Thin Solid Films; 422; 6-2002; 211-219
0040-6090
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/S0040-6090(02)00972-0
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science Sa
publisher.none.fl_str_mv Elsevier Science Sa
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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