In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
- Autores
- Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.
- Año de publicación
- 2014
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Fil: Arzubiaga, L.. CIC nanoGUNE; España
Fil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; España
Fil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; España - Materia
-
ELECTROMIGRATION TECHNIQUE
SINGLE ELECTRON TRANSISTORS (SETS) - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/44922
Ver los metadatos del registro completo
id |
CONICETDig_c24ce91c5ce75b0f40e9f94c0bb53d94 |
---|---|
oai_identifier_str |
oai:ri.conicet.gov.ar:11336/44922 |
network_acronym_str |
CONICETDig |
repository_id_str |
3498 |
network_name_str |
CONICET Digital (CONICET) |
spelling |
In situ electrical characterization of palladium-based single electron transistors made by electromigration techniqueArzubiaga, L.Golmar, FedericoLlopis, R.Casanova, F.Hueso, Luis E.ELECTROMIGRATION TECHNIQUESINGLE ELECTRON TRANSISTORS (SETS)https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.Fil: Arzubiaga, L.. CIC nanoGUNE; EspañaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; EspañaFil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; EspañaAmerican Institute of Physics2014-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/44922Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 1171262158-3226CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4902170info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4902170info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:47:25Zoai:ri.conicet.gov.ar:11336/44922instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:47:25.887CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
title |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
spellingShingle |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique Arzubiaga, L. ELECTROMIGRATION TECHNIQUE SINGLE ELECTRON TRANSISTORS (SETS) |
title_short |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
title_full |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
title_fullStr |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
title_full_unstemmed |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
title_sort |
In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
dc.creator.none.fl_str_mv |
Arzubiaga, L. Golmar, Federico Llopis, R. Casanova, F. Hueso, Luis E. |
author |
Arzubiaga, L. |
author_facet |
Arzubiaga, L. Golmar, Federico Llopis, R. Casanova, F. Hueso, Luis E. |
author_role |
author |
author2 |
Golmar, Federico Llopis, R. Casanova, F. Hueso, Luis E. |
author2_role |
author author author author |
dc.subject.none.fl_str_mv |
ELECTROMIGRATION TECHNIQUE SINGLE ELECTRON TRANSISTORS (SETS) |
topic |
ELECTROMIGRATION TECHNIQUE SINGLE ELECTRON TRANSISTORS (SETS) |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber. Fil: Arzubiaga, L.. CIC nanoGUNE; España Fil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Llopis, R.. CIC nanoGUNE; España Fil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; España Fil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; España |
description |
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-11 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/44922 Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 117126 2158-3226 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/44922 |
identifier_str_mv |
Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 117126 2158-3226 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4902170 info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4902170 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
_version_ |
1844614518312796160 |
score |
13.070432 |