In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

Autores
Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Fil: Arzubiaga, L.. CIC nanoGUNE; España
Fil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; España
Fil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; España
Materia
ELECTROMIGRATION TECHNIQUE
SINGLE ELECTRON TRANSISTORS (SETS)
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/44922
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/44922
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling In situ electrical characterization of palladium-based single electron transistors made by electromigration techniqueArzubiaga, L.Golmar, FedericoLlopis, R.Casanova, F.Hueso, Luis E.ELECTROMIGRATION TECHNIQUESINGLE ELECTRON TRANSISTORS (SETS)https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.Fil: Arzubiaga, L.. CIC nanoGUNE; EspañaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Llopis, R.. CIC nanoGUNE; EspañaFil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; EspañaFil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; EspañaAmerican Institute of Physics2014-11info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/44922Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 1171262158-3226CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.4902170info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4902170info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-15T15:46:05Zoai:ri.conicet.gov.ar:11336/44922instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-15 15:46:05.882CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
spellingShingle In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
Arzubiaga, L.
ELECTROMIGRATION TECHNIQUE
SINGLE ELECTRON TRANSISTORS (SETS)
title_short In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_full In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_fullStr In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_full_unstemmed In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_sort In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
dc.creator.none.fl_str_mv Arzubiaga, L.
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, Luis E.
author Arzubiaga, L.
author_facet Arzubiaga, L.
Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, Luis E.
author_role author
author2 Golmar, Federico
Llopis, R.
Casanova, F.
Hueso, Luis E.
author2_role author
author
author
author
dc.subject.none.fl_str_mv ELECTROMIGRATION TECHNIQUE
SINGLE ELECTRON TRANSISTORS (SETS)
topic ELECTROMIGRATION TECHNIQUE
SINGLE ELECTRON TRANSISTORS (SETS)
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Fil: Arzubiaga, L.. CIC nanoGUNE; España
Fil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Llopis, R.. CIC nanoGUNE; España
Fil: Casanova, F.. CIC nanoGUNE; España. IKERBASQUE; España
Fil: Hueso, Luis E.. CIC nanoGUNE; España. IKERBASQUE; España
description We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
publishDate 2014
dc.date.none.fl_str_mv 2014-11
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/44922
Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 117126
2158-3226
CONICET Digital
CONICET
url http://hdl.handle.net/11336/44922
identifier_str_mv Arzubiaga, L.; Golmar, Federico; Llopis, R.; Casanova, F.; Hueso, Luis E.; In situ electrical characterization of palladium-based single electron transistors made by electromigration technique; American Institute of Physics; AIP Advances; 4; 11; 11-2014; 1-7; 117126
2158-3226
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4902170
info:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4902170
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1846083559141408768
score 13.22299

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