In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

Autores
Arzubiaga, L.; Golmar, F.; Llopis, R.; Casanova, F.; Hueso, L. E.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Fil: Arzubiaga, L. CIC nanoGUNE; España
Fil: Golmar, F. Instituto Nacional de Tecnología Industrial (INTI); Argentina
Fil: Llopis, R. CIC nanoGUNE; España
Fil: Casanova, F. CIC nanoGUNE; España
Fil: Hueso, L. E. CIC nanoGUNE; España
Fuente
AIP Advances, 4(11)
Materia
Electricidad
Electrones
Transistores
Paladio
Electrodos
Aleaciones de níquel
Electrostática
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/3.0/
Repositorio
Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
Institución
Instituto Nacional de Tecnología Industrial
OAI Identificador
nuevadc:Golmar2014Electrical_pdf
Acceder
id RIINTI_63145f379fbf17026cf7edb6241181bc
oai_identifier_str nuevadc:Golmar2014Electrical_pdf
network_acronym_str RIINTI
repository_id_str
network_name_str Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
spelling In situ electrical characterization of palladium-based single electron transistors made by electromigration techniqueArzubiaga, L.Golmar, F.Llopis, R.Casanova, F.Hueso, L. E.ElectricidadElectronesTransistoresPaladioElectrodosAleaciones de níquelElectrostáticaWe report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.Fil: Arzubiaga, L. CIC nanoGUNE; EspañaFil: Golmar, F. Instituto Nacional de Tecnología Industrial (INTI); ArgentinaFil: Llopis, R. CIC nanoGUNE; EspañaFil: Casanova, F. CIC nanoGUNE; EspañaFil: Hueso, L. E. CIC nanoGUNE; EspañaAIP Publishing2014info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfGolmar2014Electrical.pdfhttps://app.inti.gob.ar/greenstone3/sites/localsite/collect/nuevadc/index/assoc/Golmar20.dir/doc.pdfAIP Advances, 4(11)reponame:Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)instname:Instituto Nacional de Tecnología Industrialenginfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/3.0/openAccess2025-10-16T10:46:34Znuevadc:Golmar2014Electrical_pdfinstacron:INTIInstitucionalhttps://app.inti.gob.ar/greenstone3/biblioOrganismo científico-tecnológicohttps://argentina.gob.ar/intihttps://app.inti.gob.ar/greenstone3/oaiserver?verb=Identifypfalcato@inti.gob.arArgentinaopendoar:2025-10-16 10:46:35.328Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI) - Instituto Nacional de Tecnología Industrialfalse
dc.title.none.fl_str_mv In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
spellingShingle In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
Arzubiaga, L.
Electricidad
Electrones
Transistores
Paladio
Electrodos
Aleaciones de níquel
Electrostática
title_short In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_full In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_fullStr In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_full_unstemmed In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
title_sort In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
dc.creator.none.fl_str_mv Arzubiaga, L.
Golmar, F.
Llopis, R.
Casanova, F.
Hueso, L. E.
author Arzubiaga, L.
author_facet Arzubiaga, L.
Golmar, F.
Llopis, R.
Casanova, F.
Hueso, L. E.
author_role author
author2 Golmar, F.
Llopis, R.
Casanova, F.
Hueso, L. E.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Electricidad
Electrones
Transistores
Paladio
Electrodos
Aleaciones de níquel
Electrostática
topic Electricidad
Electrones
Transistores
Paladio
Electrodos
Aleaciones de níquel
Electrostática
dc.description.none.fl_txt_mv We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Fil: Arzubiaga, L. CIC nanoGUNE; España
Fil: Golmar, F. Instituto Nacional de Tecnología Industrial (INTI); Argentina
Fil: Llopis, R. CIC nanoGUNE; España
Fil: Casanova, F. CIC nanoGUNE; España
Fil: Hueso, L. E. CIC nanoGUNE; España
description We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
publishDate 2014
dc.date.none.fl_str_mv 2014
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv Golmar2014Electrical.pdf
https://app.inti.gob.ar/greenstone3/sites/localsite/collect/nuevadc/index/assoc/Golmar20.dir/doc.pdf
identifier_str_mv Golmar2014Electrical.pdf
url https://app.inti.gob.ar/greenstone3/sites/localsite/collect/nuevadc/index/assoc/Golmar20.dir/doc.pdf
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/3.0/
openAccess
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/3.0/
openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv AIP Advances, 4(11)
reponame:Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
instname:Instituto Nacional de Tecnología Industrial
reponame_str Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
collection Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI)
instname_str Instituto Nacional de Tecnología Industrial
repository.name.fl_str_mv Repositorio Institucional del Instituto Nacional de Tecnología Industrial (INTI) - Instituto Nacional de Tecnología Industrial
repository.mail.fl_str_mv pfalcato@inti.gob.ar
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score 12.712165

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