Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

Autores
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo
Año de publicación
2013
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The performance of c-Si n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm-2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this work are important in order to contribute to the design of radiation-hardened devices.
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
Materia
CRYSTALLINE SILICON
SOLAR CELLS
COMPUTER SIMULATION
RADIATION-HARDENED-DEVICES
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/101489
Acceder
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network_name_str CONICET Digital (CONICET)
spelling Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cellsCappelletti, Marcelo ÁngelCasas, GuillermoCedola, Ariel PabloPeltzer y Blanca, Eitel LeopoldoCRYSTALLINE SILICONSOLAR CELLSCOMPUTER SIMULATIONRADIATION-HARDENED-DEVICEShttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1The performance of c-Si n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm-2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this work are important in order to contribute to the design of radiation-hardened devices.Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; ArgentinaFil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Universidad Nacional de Quilmes; ArgentinaFil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; ArgentinaIOP Publishing2013-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/101489Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells; IOP Publishing; Semiconductor Science And Technology; 28; 4; 3-2013; 1-70268-1242CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/0268-1242/28/4/045010/info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/28/4/045010info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:44:50Zoai:ri.conicet.gov.ar:11336/101489instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:44:50.565CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
title Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
spellingShingle Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
Cappelletti, Marcelo Ángel
CRYSTALLINE SILICON
SOLAR CELLS
COMPUTER SIMULATION
RADIATION-HARDENED-DEVICES
title_short Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
title_full Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
title_fullStr Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
title_full_unstemmed Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
title_sort Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
dc.creator.none.fl_str_mv Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author Cappelletti, Marcelo Ángel
author_facet Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author_role author
author2 Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author2_role author
author
author
dc.subject.none.fl_str_mv CRYSTALLINE SILICON
SOLAR CELLS
COMPUTER SIMULATION
RADIATION-HARDENED-DEVICES
topic CRYSTALLINE SILICON
SOLAR CELLS
COMPUTER SIMULATION
RADIATION-HARDENED-DEVICES
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The performance of c-Si n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm-2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this work are important in order to contribute to the design of radiation-hardened devices.
Fil: Cappelletti, Marcelo Ángel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata. Facultad de Ingeniería. Departamento de Electrotecnia; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata; Argentina
description The performance of c-Si n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm-2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this work are important in order to contribute to the design of radiation-hardened devices.
publishDate 2013
dc.date.none.fl_str_mv 2013-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/101489
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells; IOP Publishing; Semiconductor Science And Technology; 28; 4; 3-2013; 1-7
0268-1242
CONICET Digital
CONICET
url http://hdl.handle.net/11336/101489
identifier_str_mv Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells; IOP Publishing; Semiconductor Science And Technology; 28; 4; 3-2013; 1-7
0268-1242
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://iopscience.iop.org/0268-1242/28/4/045010/
info:eu-repo/semantics/altIdentifier/doi/10.1088/0268-1242/28/4/045010
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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