Numerical analysis of si and gaas solar cells exposed to space radiation
- Autores
- Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo
- Año de publicación
- 2013
- Idioma
- español castellano
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina - Materia
-
Device Modeling
Numerical Simulation
Proton Radiation Effects
Solar Cells - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/23532
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Numerical analysis of si and gaas solar cells exposed to space radiationCappelletti, Marcelo ÁngelCasas, GuillermoCedola, Ariel PabloPeltzer y Blanca, Eitel LeopoldoDevice ModelingNumerical SimulationProton Radiation EffectsSolar Cellshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; ArgentinaFil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaInstitute of Electrical and Electronics Engineers2013-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/23532Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-2731548-0992CONICET DigitalCONICETspainfo:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2013.6502815info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6502815/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:27:10Zoai:ri.conicet.gov.ar:11336/23532instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:27:10.524CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Numerical analysis of si and gaas solar cells exposed to space radiation |
title |
Numerical analysis of si and gaas solar cells exposed to space radiation |
spellingShingle |
Numerical analysis of si and gaas solar cells exposed to space radiation Cappelletti, Marcelo Ángel Device Modeling Numerical Simulation Proton Radiation Effects Solar Cells |
title_short |
Numerical analysis of si and gaas solar cells exposed to space radiation |
title_full |
Numerical analysis of si and gaas solar cells exposed to space radiation |
title_fullStr |
Numerical analysis of si and gaas solar cells exposed to space radiation |
title_full_unstemmed |
Numerical analysis of si and gaas solar cells exposed to space radiation |
title_sort |
Numerical analysis of si and gaas solar cells exposed to space radiation |
dc.creator.none.fl_str_mv |
Cappelletti, Marcelo Ángel Casas, Guillermo Cedola, Ariel Pablo Peltzer y Blanca, Eitel Leopoldo |
author |
Cappelletti, Marcelo Ángel |
author_facet |
Cappelletti, Marcelo Ángel Casas, Guillermo Cedola, Ariel Pablo Peltzer y Blanca, Eitel Leopoldo |
author_role |
author |
author2 |
Casas, Guillermo Cedola, Ariel Pablo Peltzer y Blanca, Eitel Leopoldo |
author2_role |
author author author |
dc.subject.none.fl_str_mv |
Device Modeling Numerical Simulation Proton Radiation Effects Solar Cells |
topic |
Device Modeling Numerical Simulation Proton Radiation Effects Solar Cells |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/2.2 https://purl.org/becyt/ford/2 https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications. Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina |
description |
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013-02 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/23532 Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273 1548-0992 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/23532 |
identifier_str_mv |
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273 1548-0992 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
spa |
language |
spa |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2013.6502815 info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6502815/ |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers |
publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
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CONICET Digital (CONICET) |
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CONICET Digital (CONICET) |
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Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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13.070432 |