Numerical analysis of si and gaas solar cells exposed to space radiation

Autores
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo
Año de publicación
2013
Idioma
español castellano
Tipo de recurso
artículo
Estado
versión publicada
Descripción
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Materia
Device Modeling
Numerical Simulation
Proton Radiation Effects
Solar Cells
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/23532
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/23532
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network_name_str CONICET Digital (CONICET)
spelling Numerical analysis of si and gaas solar cells exposed to space radiationCappelletti, Marcelo ÁngelCasas, GuillermoCedola, Ariel PabloPeltzer y Blanca, Eitel LeopoldoDevice ModelingNumerical SimulationProton Radiation EffectsSolar Cellshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2https://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; ArgentinaFil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; ArgentinaFil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaInstitute of Electrical and Electronics Engineers2013-02info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/23532Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-2731548-0992CONICET DigitalCONICETspainfo:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2013.6502815info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6502815/info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:59:43Zoai:ri.conicet.gov.ar:11336/23532instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:59:44.105CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Numerical analysis of si and gaas solar cells exposed to space radiation
title Numerical analysis of si and gaas solar cells exposed to space radiation
spellingShingle Numerical analysis of si and gaas solar cells exposed to space radiation
Cappelletti, Marcelo Ángel
Device Modeling
Numerical Simulation
Proton Radiation Effects
Solar Cells
title_short Numerical analysis of si and gaas solar cells exposed to space radiation
title_full Numerical analysis of si and gaas solar cells exposed to space radiation
title_fullStr Numerical analysis of si and gaas solar cells exposed to space radiation
title_full_unstemmed Numerical analysis of si and gaas solar cells exposed to space radiation
title_sort Numerical analysis of si and gaas solar cells exposed to space radiation
dc.creator.none.fl_str_mv Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author Cappelletti, Marcelo Ángel
author_facet Cappelletti, Marcelo Ángel
Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author_role author
author2 Casas, Guillermo
Cedola, Ariel Pablo
Peltzer y Blanca, Eitel Leopoldo
author2_role author
author
author
dc.subject.none.fl_str_mv Device Modeling
Numerical Simulation
Proton Radiation Effects
Solar Cells
topic Device Modeling
Numerical Simulation
Proton Radiation Effects
Solar Cells
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
Fil: Cappelletti, Marcelo Ángel. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Casas, Guillermo. Universidad Nacional de La Plata; Argentina. Universidad Nacional de Quilmes; Argentina
Fil: Cedola, Ariel Pablo. Universidad Nacional de La Plata; Argentina
Fil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de La Plata; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
description In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+ /cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.
publishDate 2013
dc.date.none.fl_str_mv 2013-02
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/23532
Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273
1548-0992
CONICET Digital
CONICET
url http://hdl.handle.net/11336/23532
identifier_str_mv Cappelletti, Marcelo Ángel; Casas, Guillermo; Cedola, Ariel Pablo; Peltzer y Blanca, Eitel Leopoldo; Numerical analysis of si and gaas solar cells exposed to space radiation; Institute of Electrical and Electronics Engineers; IEEE Latin America Transactions; 11; 1; 2-2013; 268-273
1548-0992
CONICET Digital
CONICET
dc.language.none.fl_str_mv spa
language spa
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1109/TLA.2013.6502815
info:eu-repo/semantics/altIdentifier/url/http://ieeexplore.ieee.org/document/6502815/
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
publisher.none.fl_str_mv Institute of Electrical and Electronics Engineers
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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