Mixed oxide semiconductors based on bismuth for photoelectrochemical applications

Autores
Ropero Vega, Jose Luis; Meléndez, A. M.; Pedraza Avella, Julio Andrés; Candal, Roberto Jorge; Niño Gómez, M. E.
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.
Fil: Ropero Vega, Jose Luis. Universidad Industrial Santander; Colombia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Meléndez, A. M.. Universidad Industrial Santander; Colombia
Fil: Pedraza Avella, Julio Andrés. Universidad Industrial Santander; Colombia
Fil: Candal, Roberto Jorge. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; Argentina
Fil: Niño Gómez, M. E.. Universidad Industrial Santander; Colombia
Materia
Sol-Gel
Dip-Coating
Bismuth Oxide
Photoelectrochemistry
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/31744
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/31744
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Mixed oxide semiconductors based on bismuth for photoelectrochemical applicationsRopero Vega, Jose LuisMeléndez, A. M.Pedraza Avella, Julio AndrésCandal, Roberto JorgeNiño Gómez, M. E.Sol-GelDip-CoatingBismuth OxidePhotoelectrochemistryhttps://purl.org/becyt/ford/1.4https://purl.org/becyt/ford/1The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.Fil: Ropero Vega, Jose Luis. Universidad Industrial Santander; Colombia. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Meléndez, A. M.. Universidad Industrial Santander; ColombiaFil: Pedraza Avella, Julio Andrés. Universidad Industrial Santander; ColombiaFil: Candal, Roberto Jorge. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; ArgentinaFil: Niño Gómez, M. E.. Universidad Industrial Santander; ColombiaSpringer2014-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/31744Niño Gómez, M. E.; Candal, Roberto Jorge; Pedraza Avella, Julio Andrés; Meléndez, A. M.; Ropero Vega, Jose Luis; Mixed oxide semiconductors based on bismuth for photoelectrochemical applications; Springer; Journal of Solid State Electrochemistry (print); 18; 7; 3-2014; 1963-19711432-84881433-0768CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1007/s10008-014-2420-4info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007%2Fs10008-014-2420-4info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-10-22T11:28:50Zoai:ri.conicet.gov.ar:11336/31744instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-10-22 11:28:50.48CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
title Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
spellingShingle Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
Ropero Vega, Jose Luis
Sol-Gel
Dip-Coating
Bismuth Oxide
Photoelectrochemistry
title_short Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
title_full Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
title_fullStr Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
title_full_unstemmed Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
title_sort Mixed oxide semiconductors based on bismuth for photoelectrochemical applications
dc.creator.none.fl_str_mv Ropero Vega, Jose Luis
Meléndez, A. M.
Pedraza Avella, Julio Andrés
Candal, Roberto Jorge
Niño Gómez, M. E.
author Ropero Vega, Jose Luis
author_facet Ropero Vega, Jose Luis
Meléndez, A. M.
Pedraza Avella, Julio Andrés
Candal, Roberto Jorge
Niño Gómez, M. E.
author_role author
author2 Meléndez, A. M.
Pedraza Avella, Julio Andrés
Candal, Roberto Jorge
Niño Gómez, M. E.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Sol-Gel
Dip-Coating
Bismuth Oxide
Photoelectrochemistry
topic Sol-Gel
Dip-Coating
Bismuth Oxide
Photoelectrochemistry
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.4
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.
Fil: Ropero Vega, Jose Luis. Universidad Industrial Santander; Colombia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Meléndez, A. M.. Universidad Industrial Santander; Colombia
Fil: Pedraza Avella, Julio Andrés. Universidad Industrial Santander; Colombia
Fil: Candal, Roberto Jorge. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; Argentina
Fil: Niño Gómez, M. E.. Universidad Industrial Santander; Colombia
description The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.
publishDate 2014
dc.date.none.fl_str_mv 2014-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/31744
Niño Gómez, M. E.; Candal, Roberto Jorge; Pedraza Avella, Julio Andrés; Meléndez, A. M.; Ropero Vega, Jose Luis; Mixed oxide semiconductors based on bismuth for photoelectrochemical applications; Springer; Journal of Solid State Electrochemistry (print); 18; 7; 3-2014; 1963-1971
1432-8488
1433-0768
CONICET Digital
CONICET
url http://hdl.handle.net/11336/31744
identifier_str_mv Niño Gómez, M. E.; Candal, Roberto Jorge; Pedraza Avella, Julio Andrés; Meléndez, A. M.; Ropero Vega, Jose Luis; Mixed oxide semiconductors based on bismuth for photoelectrochemical applications; Springer; Journal of Solid State Electrochemistry (print); 18; 7; 3-2014; 1963-1971
1432-8488
1433-0768
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1007/s10008-014-2420-4
info:eu-repo/semantics/altIdentifier/url/https://link.springer.com/article/10.1007%2Fs10008-014-2420-4
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 12.982451

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