ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations

Autores
Gilabert, Ulises Eduardo; Heredia, Eduardo Armando; Trigubo, Alicia Beatriz
Año de publicación
2006
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished in different crystallographic orientations: (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0). The structural characterization of substrates and films was performed by X-ray diffraction (Laue technique), surface chemical etching and optical microscopy. Chemical composition analysis was performed by an electronic microprobe in the wavelength dispersive spectroscopic mode and electrical characterization by Hall effect measurements. MCT is an important semiconductor for the manufacture of infrared detectors. The alloyed substrates have a closer lattice match with Hg1-xCdxTe. Furthermore, these substrates usually have a lower dislocation density. Both facts determine a lower generation of lineal defects during growth. This fact could produce a larger carrier lifetime and, as a consequence, better electrical properties of devices. On the other hand the surface morphology of ISOVPE MCT epitaxial films only depends on the crystallographic orientation, being independent of the use of pure or alloyed substrates.
Fil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Heredia, Eduardo Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Materia
A1. Characterization
A1. Etching
A1. Line Defects
A1. Substrates
A3. Vapor Phase Epitaxy
B2. Semiconducting Ii-Vi Materials
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/82212
Acceder
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oai_identifier_str oai:ri.conicet.gov.ar:11336/82212
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientationsGilabert, Ulises EduardoHeredia, Eduardo ArmandoTrigubo, Alicia BeatrizA1. CharacterizationA1. EtchingA1. Line DefectsA1. SubstratesA3. Vapor Phase EpitaxyB2. Semiconducting Ii-Vi Materialshttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished in different crystallographic orientations: (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0). The structural characterization of substrates and films was performed by X-ray diffraction (Laue technique), surface chemical etching and optical microscopy. Chemical composition analysis was performed by an electronic microprobe in the wavelength dispersive spectroscopic mode and electrical characterization by Hall effect measurements. MCT is an important semiconductor for the manufacture of infrared detectors. The alloyed substrates have a closer lattice match with Hg1-xCdxTe. Furthermore, these substrates usually have a lower dislocation density. Both facts determine a lower generation of lineal defects during growth. This fact could produce a larger carrier lifetime and, as a consequence, better electrical properties of devices. On the other hand the surface morphology of ISOVPE MCT epitaxial films only depends on the crystallographic orientation, being independent of the use of pure or alloyed substrates.Fil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Heredia, Eduardo Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaFil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaElsevier Science2006-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/82212Gilabert, Ulises Eduardo; Heredia, Eduardo Armando; Trigubo, Alicia Beatriz; ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 295; 1; 9-2006; 1-60022-0248CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022024806007366info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2006.07.015info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T10:14:21Zoai:ri.conicet.gov.ar:11336/82212instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 10:14:22.11CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
title ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
spellingShingle ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
Gilabert, Ulises Eduardo
A1. Characterization
A1. Etching
A1. Line Defects
A1. Substrates
A3. Vapor Phase Epitaxy
B2. Semiconducting Ii-Vi Materials
title_short ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
title_full ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
title_fullStr ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
title_full_unstemmed ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
title_sort ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations
dc.creator.none.fl_str_mv Gilabert, Ulises Eduardo
Heredia, Eduardo Armando
Trigubo, Alicia Beatriz
author Gilabert, Ulises Eduardo
author_facet Gilabert, Ulises Eduardo
Heredia, Eduardo Armando
Trigubo, Alicia Beatriz
author_role author
author2 Heredia, Eduardo Armando
Trigubo, Alicia Beatriz
author2_role author
author
dc.subject.none.fl_str_mv A1. Characterization
A1. Etching
A1. Line Defects
A1. Substrates
A3. Vapor Phase Epitaxy
B2. Semiconducting Ii-Vi Materials
topic A1. Characterization
A1. Etching
A1. Line Defects
A1. Substrates
A3. Vapor Phase Epitaxy
B2. Semiconducting Ii-Vi Materials
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished in different crystallographic orientations: (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0). The structural characterization of substrates and films was performed by X-ray diffraction (Laue technique), surface chemical etching and optical microscopy. Chemical composition analysis was performed by an electronic microprobe in the wavelength dispersive spectroscopic mode and electrical characterization by Hall effect measurements. MCT is an important semiconductor for the manufacture of infrared detectors. The alloyed substrates have a closer lattice match with Hg1-xCdxTe. Furthermore, these substrates usually have a lower dislocation density. Both facts determine a lower generation of lineal defects during growth. This fact could produce a larger carrier lifetime and, as a consequence, better electrical properties of devices. On the other hand the surface morphology of ISOVPE MCT epitaxial films only depends on the crystallographic orientation, being independent of the use of pure or alloyed substrates.
Fil: Gilabert, Ulises Eduardo. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Fil: Heredia, Eduardo Armando. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
description Epitaxial films of Hg1-xCdxTe (MCT) with x≅0.2 were grown on CdTe, Cd0.96Zn0.04Te and CdTe0.96Se0.04 substrates by the isothermal vapor phase epitaxy (ISOVPE) technique with no mercury overpressure. The growth was accomplished in different crystallographic orientations: (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0). The structural characterization of substrates and films was performed by X-ray diffraction (Laue technique), surface chemical etching and optical microscopy. Chemical composition analysis was performed by an electronic microprobe in the wavelength dispersive spectroscopic mode and electrical characterization by Hall effect measurements. MCT is an important semiconductor for the manufacture of infrared detectors. The alloyed substrates have a closer lattice match with Hg1-xCdxTe. Furthermore, these substrates usually have a lower dislocation density. Both facts determine a lower generation of lineal defects during growth. This fact could produce a larger carrier lifetime and, as a consequence, better electrical properties of devices. On the other hand the surface morphology of ISOVPE MCT epitaxial films only depends on the crystallographic orientation, being independent of the use of pure or alloyed substrates.
publishDate 2006
dc.date.none.fl_str_mv 2006-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/82212
Gilabert, Ulises Eduardo; Heredia, Eduardo Armando; Trigubo, Alicia Beatriz; ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 295; 1; 9-2006; 1-6
0022-0248
CONICET Digital
CONICET
url http://hdl.handle.net/11336/82212
identifier_str_mv Gilabert, Ulises Eduardo; Heredia, Eduardo Armando; Trigubo, Alicia Beatriz; ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 295; 1; 9-2006; 1-6
0022-0248
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0022024806007366
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2006.07.015
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1844614069964767232
score 13.070432

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