Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

Autores
Gilabert, Ulises Eduardo; Moyano, Edgardo A.; Scarpettini, Alberto Franco; Trigubo, Alicia Beatriz
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion–convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD.
Fil: Gilabert, Ulises Eduardo. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Moyano, Edgardo A.. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; Argentina
Fil: Scarpettini, Alberto Franco. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Universidad Tecnológica Nacional. Facultad Regional Delta; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
Materia
GROWTH MODELS
VAPOR PHASE EPITAXY
CADMIUM COMPOUNDS
SEMICONDUCTING II-VI MATERIALS
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/117830
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oai_identifier_str oai:ri.conicet.gov.ar:11336/117830
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientationsGilabert, Ulises EduardoMoyano, Edgardo A.Scarpettini, Alberto FrancoTrigubo, Alicia BeatrizGROWTH MODELSVAPOR PHASE EPITAXYCADMIUM COMPOUNDSSEMICONDUCTING II-VI MATERIALShttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion–convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD.Fil: Gilabert, Ulises Eduardo. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Moyano, Edgardo A.. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; ArgentinaFil: Scarpettini, Alberto Franco. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Universidad Tecnológica Nacional. Facultad Regional Delta; ArgentinaFil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; ArgentinaElsevier Science2010-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/117830Gilabert, Ulises Eduardo; Moyano, Edgardo A.; Scarpettini, Alberto Franco; Trigubo, Alicia Beatriz; Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 312; 9; 4-2010; 1481-14850022-0248CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0022024810000412info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2010.01.027info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:46:00Zoai:ri.conicet.gov.ar:11336/117830instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:46:00.572CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
spellingShingle Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
Gilabert, Ulises Eduardo
GROWTH MODELS
VAPOR PHASE EPITAXY
CADMIUM COMPOUNDS
SEMICONDUCTING II-VI MATERIALS
title_short Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_fullStr Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_full_unstemmed Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
title_sort Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
dc.creator.none.fl_str_mv Gilabert, Ulises Eduardo
Moyano, Edgardo A.
Scarpettini, Alberto Franco
Trigubo, Alicia Beatriz
author Gilabert, Ulises Eduardo
author_facet Gilabert, Ulises Eduardo
Moyano, Edgardo A.
Scarpettini, Alberto Franco
Trigubo, Alicia Beatriz
author_role author
author2 Moyano, Edgardo A.
Scarpettini, Alberto Franco
Trigubo, Alicia Beatriz
author2_role author
author
author
dc.subject.none.fl_str_mv GROWTH MODELS
VAPOR PHASE EPITAXY
CADMIUM COMPOUNDS
SEMICONDUCTING II-VI MATERIALS
topic GROWTH MODELS
VAPOR PHASE EPITAXY
CADMIUM COMPOUNDS
SEMICONDUCTING II-VI MATERIALS
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion–convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD.
Fil: Gilabert, Ulises Eduardo. Secretaría de Industria y Minería. Servicio Geológico Minero Argentino; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina
Fil: Moyano, Edgardo A.. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; Argentina
Fil: Scarpettini, Alberto Franco. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Departamento de Física; Argentina. Universidad Tecnológica Nacional. Facultad Regional Delta; Argentina
Fil: Trigubo, Alicia Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; Argentina. Ministerio de Defensa. Instituto de Investigaciones Científicas y Técnicas para la Defensa; Argentina
description Hg1-xCdxTe (MCT) epilayers were grown on (1 1 1)Cd, (1 1 1)Te, (1 1 0) and (1 0 0) CdZnTe and CdTeSe substrates by isothermal vapor phase epitaxy (ISOVPE). The growth kinetics of the epilayers were studied by a non-linear diffusive convective model for the ISOVPE MCT growth, which was assessed in a previous paper . The non-linear diffusion–convection problem, which describes ISOVPE MCT film growth, was numerically solved by means of discrete mathematics. As the theoretical and experimental composition profiles were remarkably different in accordance with the epilayers grown over pure CdTe substrates, in the model a finite rate in the surface reaction rate constant that enabled a good fit was assumed. The numerical value of the surface reaction rate constant was similar for all the studied substrates and crystalline orientations, hence the results enabled us to determine that the deposition rate has a mixed control for the experimental conditions of this work. This isotropic characteristic of the ISOVPE technique for pure and alloyed CdTe substrates is remarkable, quite different from other MCT growth techniques as MBE or MOCVD.
publishDate 2010
dc.date.none.fl_str_mv 2010-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/117830
Gilabert, Ulises Eduardo; Moyano, Edgardo A.; Scarpettini, Alberto Franco; Trigubo, Alicia Beatriz; Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 312; 9; 4-2010; 1481-1485
0022-0248
CONICET Digital
CONICET
url http://hdl.handle.net/11336/117830
identifier_str_mv Gilabert, Ulises Eduardo; Moyano, Edgardo A.; Scarpettini, Alberto Franco; Trigubo, Alicia Beatriz; Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations; Elsevier Science; Journal of Crystal Growth; 312; 9; 4-2010; 1481-1485
0022-0248
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S0022024810000412
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2010.01.027
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.070432

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