Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence
- Autores
- Borrero Gonzalez, Luis Jose; Nunes, L. A. O.; Guimaraes, F. E. G.; Wojcik, J.; Mascher, P.; Gennaro, Ana Maria; Tirado, Monica Cecilia; Comedi, David Mario
- Año de publicación
- 2012
- Idioma
- inglés
- Tipo de recurso
- artículo
- Estado
- versión publicada
- Descripción
- We combine X-ray absorption, electron spin resonance and Raman spectroscopies, X-ray diffraction and photoluminescence (PL) techniques to determine the structure and luminescence mechanisms in Si nanoclusters (Si-ncls) embedded within Si oxides at various intermediate formation stages. The Si-ncls/oxide systems are fabricated by thermally annealing plasma-enhanced chemical vapor deposited Si-rich Si-oxide films. The structural and chemical orders in the amorphous oxide matrix, the Si-ncls amorphous and crystalline volume fractions and sizes, the dangling bond density and PL spectra and decay rates are followed closely as a function of the annealing temperature. The results can be interpreted by a crystalline core/amorphous shell model for the Sincls. The important role of the shell, often ignored in the literature, is discussed. As the Si-ncls crystalline cores grow at the expense of thinning amorphous shells, the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement prevails.
Fil: Borrero Gonzalez, Luis Jose. Universidade de São Paulo; Brasil
Fil: Nunes, L. A. O.. Universidade de São Paulo; Brasil
Fil: Guimaraes, F. E. G.. Universidade de São Paulo; Brasil
Fil: Wojcik, J.. McMaster University; Canadá
Fil: Mascher, P.. McMaster University; Canadá
Fil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina
Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán; Argentina
Fil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina - Materia
-
Si-Rich Si Oxides
X-Ray Diffraction
Electron Spin Resonance Spectroscopy
Raman Spectroscopy - Nivel de accesibilidad
- acceso abierto
- Condiciones de uso
- https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
- Repositorio
- Institución
- Consejo Nacional de Investigaciones Científicas y Técnicas
- OAI Identificador
- oai:ri.conicet.gov.ar:11336/18807
Ver los metadatos del registro completo
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Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of PhotoluminescenceBorrero Gonzalez, Luis JoseNunes, L. A. O.Guimaraes, F. E. G.Wojcik, J.Mascher, P.Gennaro, Ana MariaTirado, Monica CeciliaComedi, David MarioSi-Rich Si OxidesX-Ray DiffractionElectron Spin Resonance SpectroscopyRaman Spectroscopyhttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We combine X-ray absorption, electron spin resonance and Raman spectroscopies, X-ray diffraction and photoluminescence (PL) techniques to determine the structure and luminescence mechanisms in Si nanoclusters (Si-ncls) embedded within Si oxides at various intermediate formation stages. The Si-ncls/oxide systems are fabricated by thermally annealing plasma-enhanced chemical vapor deposited Si-rich Si-oxide films. The structural and chemical orders in the amorphous oxide matrix, the Si-ncls amorphous and crystalline volume fractions and sizes, the dangling bond density and PL spectra and decay rates are followed closely as a function of the annealing temperature. The results can be interpreted by a crystalline core/amorphous shell model for the Sincls. The important role of the shell, often ignored in the literature, is discussed. As the Si-ncls crystalline cores grow at the expense of thinning amorphous shells, the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement prevails.Fil: Borrero Gonzalez, Luis Jose. Universidade de São Paulo; BrasilFil: Nunes, L. A. O.. Universidade de São Paulo; BrasilFil: Guimaraes, F. E. G.. Universidade de São Paulo; BrasilFil: Wojcik, J.. McMaster University; CanadáFil: Mascher, P.. McMaster University; CanadáFil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán; ArgentinaFil: Comedi, David Mario. Universidad Nacional de Tucumán; ArgentinaThe Electrochemical Society2012-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/18807Borrero Gonzalez, Luis Jose; Nunes, L. A. O.; Guimaraes, F. E. G.; Wojcik, J.; Mascher, P.; et al.; Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence; The Electrochemical Society; ECS Transactions; 45; 5; 6-2012; 11-191938-6737CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1149/1.3700405info:eu-repo/semantics/altIdentifier/url/http://ecst.ecsdl.org/content/45/5/11info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2025-09-29T09:38:14Zoai:ri.conicet.gov.ar:11336/18807instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982025-09-29 09:38:14.272CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse |
dc.title.none.fl_str_mv |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
title |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
spellingShingle |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence Borrero Gonzalez, Luis Jose Si-Rich Si Oxides X-Ray Diffraction Electron Spin Resonance Spectroscopy Raman Spectroscopy |
title_short |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
title_full |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
title_fullStr |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
title_full_unstemmed |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
title_sort |
Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence |
dc.creator.none.fl_str_mv |
Borrero Gonzalez, Luis Jose Nunes, L. A. O. Guimaraes, F. E. G. Wojcik, J. Mascher, P. Gennaro, Ana Maria Tirado, Monica Cecilia Comedi, David Mario |
author |
Borrero Gonzalez, Luis Jose |
author_facet |
Borrero Gonzalez, Luis Jose Nunes, L. A. O. Guimaraes, F. E. G. Wojcik, J. Mascher, P. Gennaro, Ana Maria Tirado, Monica Cecilia Comedi, David Mario |
author_role |
author |
author2 |
Nunes, L. A. O. Guimaraes, F. E. G. Wojcik, J. Mascher, P. Gennaro, Ana Maria Tirado, Monica Cecilia Comedi, David Mario |
author2_role |
author author author author author author author |
dc.subject.none.fl_str_mv |
Si-Rich Si Oxides X-Ray Diffraction Electron Spin Resonance Spectroscopy Raman Spectroscopy |
topic |
Si-Rich Si Oxides X-Ray Diffraction Electron Spin Resonance Spectroscopy Raman Spectroscopy |
purl_subject.fl_str_mv |
https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
dc.description.none.fl_txt_mv |
We combine X-ray absorption, electron spin resonance and Raman spectroscopies, X-ray diffraction and photoluminescence (PL) techniques to determine the structure and luminescence mechanisms in Si nanoclusters (Si-ncls) embedded within Si oxides at various intermediate formation stages. The Si-ncls/oxide systems are fabricated by thermally annealing plasma-enhanced chemical vapor deposited Si-rich Si-oxide films. The structural and chemical orders in the amorphous oxide matrix, the Si-ncls amorphous and crystalline volume fractions and sizes, the dangling bond density and PL spectra and decay rates are followed closely as a function of the annealing temperature. The results can be interpreted by a crystalline core/amorphous shell model for the Sincls. The important role of the shell, often ignored in the literature, is discussed. As the Si-ncls crystalline cores grow at the expense of thinning amorphous shells, the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement prevails. Fil: Borrero Gonzalez, Luis Jose. Universidade de São Paulo; Brasil Fil: Nunes, L. A. O.. Universidade de São Paulo; Brasil Fil: Guimaraes, F. E. G.. Universidade de São Paulo; Brasil Fil: Wojcik, J.. McMaster University; Canadá Fil: Mascher, P.. McMaster University; Canadá Fil: Gennaro, Ana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentina Fil: Tirado, Monica Cecilia. Universidad Nacional de Tucumán; Argentina Fil: Comedi, David Mario. Universidad Nacional de Tucumán; Argentina |
description |
We combine X-ray absorption, electron spin resonance and Raman spectroscopies, X-ray diffraction and photoluminescence (PL) techniques to determine the structure and luminescence mechanisms in Si nanoclusters (Si-ncls) embedded within Si oxides at various intermediate formation stages. The Si-ncls/oxide systems are fabricated by thermally annealing plasma-enhanced chemical vapor deposited Si-rich Si-oxide films. The structural and chemical orders in the amorphous oxide matrix, the Si-ncls amorphous and crystalline volume fractions and sizes, the dangling bond density and PL spectra and decay rates are followed closely as a function of the annealing temperature. The results can be interpreted by a crystalline core/amorphous shell model for the Sincls. The important role of the shell, often ignored in the literature, is discussed. As the Si-ncls crystalline cores grow at the expense of thinning amorphous shells, the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement prevails. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-06 |
dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://purl.org/coar/resource_type/c_6501 info:ar-repo/semantics/articulo |
format |
article |
status_str |
publishedVersion |
dc.identifier.none.fl_str_mv |
http://hdl.handle.net/11336/18807 Borrero Gonzalez, Luis Jose; Nunes, L. A. O.; Guimaraes, F. E. G.; Wojcik, J.; Mascher, P.; et al.; Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence; The Electrochemical Society; ECS Transactions; 45; 5; 6-2012; 11-19 1938-6737 CONICET Digital CONICET |
url |
http://hdl.handle.net/11336/18807 |
identifier_str_mv |
Borrero Gonzalez, Luis Jose; Nunes, L. A. O.; Guimaraes, F. E. G.; Wojcik, J.; Mascher, P.; et al.; Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence; The Electrochemical Society; ECS Transactions; 45; 5; 6-2012; 11-19 1938-6737 CONICET Digital CONICET |
dc.language.none.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
info:eu-repo/semantics/altIdentifier/doi/10.1149/1.3700405 info:eu-repo/semantics/altIdentifier/url/http://ecst.ecsdl.org/content/45/5/11 |
dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
eu_rights_str_mv |
openAccess |
rights_invalid_str_mv |
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ |
dc.format.none.fl_str_mv |
application/pdf application/pdf |
dc.publisher.none.fl_str_mv |
The Electrochemical Society |
publisher.none.fl_str_mv |
The Electrochemical Society |
dc.source.none.fl_str_mv |
reponame:CONICET Digital (CONICET) instname:Consejo Nacional de Investigaciones Científicas y Técnicas |
reponame_str |
CONICET Digital (CONICET) |
collection |
CONICET Digital (CONICET) |
instname_str |
Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.name.fl_str_mv |
CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas |
repository.mail.fl_str_mv |
dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar |
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1844613208166367232 |
score |
13.070432 |